TRANSISTOR MARKING AM Search Results
TRANSISTOR MARKING AM Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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5962-8672601EA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BEA) |
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54F151/BEA |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CDIP16 - Dual marked (M38510/33901BEA) |
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54F151/B2A |
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54F151 - Multiplexer, 1-Func, 8 Line Input, TTL, CQCC20 - Dual marked (M38510/33901B2A) |
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5962-8672601FA |
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Parity Generator/Checker, S Series, 12-Bit, Inverted Output, TTL - Dual marked (93S48/BFA) |
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ICL7667MJA/883B |
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ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
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TRANSISTOR MARKING AM Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: UTC MMBT5088 / MMBT5089 NPN EPITAXIAL SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50mA. 2 MARKING MMBT5088 1 1Q 3 MARKING(MMBT5089) |
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MMBT5088 MMBT5089 MMBT5088) MMBT5089) OT-23 QW-R206-033 | |
SO642
Abstract: SO692
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SO642 SO692 OT-23 SO642 SO692 | |
transistor MAR 819
Abstract: transistor MAR 543 sl2 357 BFS17
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OCR Scan |
BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357 | |
Contextual Info: MMBT2222AT NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. E B • General purpose switching & amplification application Marking : A02 SOT-523F Absolute Maximum Ratings |
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MMBT2222AT OT-523F MMBT2222AT | |
MMBTA05Contextual Info: MMBTA05 NPN Silicon Epitaxial Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-23 The MMBTA05 is Amplifier Transistor A L FEATURES 3 3 Driver Transistor 1 1 2 K E 2 D MARKING |
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MMBTA05 OT-23 MMBTA05 100mA 100mA, 100MHz 26-Oct-2009 | |
1N914
Abstract: LMBT5401LT1G
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LMBT5401LT1G 3000/Tape LMBT5401LT3G 10000/Tape OT-23 1N914 LMBT5401LT1G | |
Contextual Info: MMBT3906T PNP Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A06 |
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MMBT3906T OT-523F MMBT3904T MMBT3906T | |
LMBT5551DW1T1G
Abstract: 1N914 LMBT5551DW1T3G
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LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88 419B-01 419B-02. LMBT5551DW1T1G 1N914 LMBT5551DW1T3G | |
Contextual Info: MMBT3904T NPN Epitaxial Silicon Transistor Features C • General purpose amplifier transistor. • Ultra-Small Surface Mount Package for all types. • Suitable for general switching & amplification • Well suited for portable application E B Marking : A04 |
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MMBT3904T OT-523F MMBT3906T MMBT3904T | |
3BS transistor
Abstract: S0642
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OCR Scan |
S0692 OT-23 SC06960 S0642 OT-23 3BS transistor S0642 | |
Contextual Info: MMBTH10LT1, MMBTH10-4LT1 Preferred Devices VHF/UHF Transistor NPN Silicon • Device Marking: 3EM http://onsemi.com Device Marking: COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 25 Vdc Collector-Base Voltage VCBO 30 Vdc |
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MMBTH10LT1, MMBTH10-4LT1 | |
marking G1 sot23 UTCContextual Info: UTC MMBT5551 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES * High Collector-Emitter Voltage: VCEO=160V *High current gain 2 1 APPLICATIONS *Telephone switching circuit *Amplifier 3 MARKING SOT-23 G1 1:EMITTER 2:BASE 3:COLLECTOR |
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MMBT5551 OT-23 QW-R206-010, marking G1 sot23 UTC | |
Contextual Info: UTC MMBT1815 NPN EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES 2 *Collector-Emitter voltage: BVCEO=50V *Collector current up to 150mA * High hFE linearity *complimentary to MMBT1015 1 3 MARKING SOT-113 C4 |
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MMBT1815 150mA MMBT1015 OT-113 QW-R210-004 | |
"marking E1"
Abstract: BFS17 BFS17R sot 23 transistor 70.2
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BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2 | |
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Contextual Info: LESHAN RADIO COMPANY, LTD. DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR LMBT5551DW1T1G FEATURE 6 ƽPb-Free package is available. 5 4 DEVICE MARKING AND ORDERING INFORMATION Device Marking Shipping LMBT5551DW1T1G G1 3000/Tape&Reel LMBT5551DW1T3G G1 10000/Tape&Reel |
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LMBT5551DW1T1G 3000/Tape LMBT5551DW1T3G 10000/Tape OT-363/SC-88 | |
d82 sot23
Abstract: D882* transistor
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D882SS B772SS OT-23 D882SSL 10sing QW-R206-018 d82 sot23 D882* transistor | |
2FK transistorContextual Info: MMBT2907AK PNP Epitaxial Silicon Transistor MMBT2907AK PNP Epitaxial Silicon Transistor General Purpose Transistor Marking 3 2FK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units |
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MMBT2907AK MMBT2907AK OT-23 2FK transistor | |
Contextual Info: MMBT3904K NPN Epitaxial Silicon Transistor MMBT3904K NPN Epitaxial Silicon Transistor General Purpose Transistor Marking 3 1AK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25°C unless otherwise noted Symbol Parameter Value Units |
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MMBT3904K MMBT3904K OT-23 | |
2tk transistorContextual Info: MMBT4403K PNP Epitaxial Silicon Transistor MMBT4403K PNP Epitaxial Silicon Transistor Switching Transistor Marking 3 2TK 2 1 SOT-23 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Symbol Ta = 25°C unless otherwise noted Parameter Value Units VCBO |
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MMBT4403K MMBT4403K OT-23 2tk transistor | |
mps 1049
Abstract: JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23
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MMBTH10LT1, MMBTH10-4LT1 mps 1049 JB marking transistor Marking H11 sot marking JB sot23 JB MARKING SOT-23 | |
Contextual Info: UTC MMBT1015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR FEATURES *Collector-Emitter Voltage: BVCEO=-50V *Collector current up to 150mA *High Hfe linearity *Complement to MMBT1815 2 1 3 MARKING A4 SOT-113 1:EMITTER 2:BASE 3: COLLECTOR |
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MMBT1015 150mA MMBT1815 OT-113 QW-R210-003 | |
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA06 TRANSISTOR NPN SOT–23 FEATURES For Switching and Amplifier Applications Complementary Type PNP Transistor MMBTA56 MARKING: 1GM 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) |
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OT-23 MMBTA06 MMBTA56 | |
1gm transistor
Abstract: 1GM sot-23 transistor
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OT-23 MMBTA06 MMBTA56 100mA 100mA, 100MHz 1gm transistor 1GM sot-23 transistor | |
BF420
Abstract: BF420-AP BF421
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BF420 BF420-AP BF421 BF420 BF420-AP BF421 |