TRANSISTOR MARKING 2A Search Results

stc403

Abstract: transistor marking MH STC403 TO-220F
Contextual Info: STC403 Semiconductor NPN Silicon Transistor Features • Power Transistor General Purpose application • Low saturation voltage : VCE SAT =0.4V Typ. • High Voltage : VCEO=60V Min. Ordering Information Type NO. STC403 Marking STC403 Package Code TO-220F

KSC2982

Contextual Info: KSC2982 NPN Epitaxial Silicon Transistor Strobe Flash & Medium Power Amplifier • Excellent hFE Linearity : hFE1=140 ~ 600 • Low Collector-Emitter Saturation Voltage : VCE sat =0.5V • Collector Dissipation : PC=1~2W in Mounted on Ceramic Board Marking

RF transistor marking IN SOT-89

Abstract: RF transistor marking H SOT-89 RF transistor marking "SOT-89" RF transistor Type code SOT-89
Contextual Info: TSB1424 Low Vcesat PNP Transistor SOT-89 SOT-23 Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCBO -20V BVCEO -20V IC -3A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.2 @ IC / IB = -2A / -100mA (Typ.) Complementary part with TSD2150

PIN8 GND SOP8

Abstract: PIN1 GND SOP8 LT63W3-4D-UEE3-Z 1N5825 AX1509 AX1509S-ADJ DIP-8 PWM PIN2 VCC PIN4 GND DIP-8 PWM PIN2 VCC
Contextual Info: Page No. : 1/8 AX1509 150KHz, 2A PWM Buck DC/DC Converter 8-Lead Plastic DIP-8 Package Code: P Description The AX1509 is Monolithic IC that design for a step-down DC/DC Converter, and own the ability of driving a 2A load without additional transistor component. The output version

MLP832

Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,

STSR220

Contextual Info: STSR220 HIGH EFFICIENCY SWITCHED MODE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF AV 2A VRRM 200V VF(max) 0.8V FEATURES AND BENEFITS • ■ ■ ■ VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY TIMES HIGH SURGE CURRENT

C3216X7RIC106M

Abstract: RBL 43 P TRANSISTOR EL7586 EL7586A EL7586AILZ EL7586AILZ-T7 EL7586ILZ EL7586ILZ-T13 EL7586ILZ-T7 MARKING R42 SOT-23
Contextual Info: EL7586, EL7586A Data Sheet October 7, 2005 FN9210.1 TFT-LCD Power Supply Features The EL7586 and EL7586A represent multiple output regulators for use in all large panel, TFT-LCD applications. Both feature a single boost converter with an integrated 2A FET, two positive LDOs for VON and VLOGIC generation,

Contextual Info: LP38500-ADJ, LP38502-ADJ www.ti.com SNVS539F – NOVEMBER 2007 – REVISED APRIL 2013 LP38500/2-ADJ, LP38500A/2A-ADJ 1.5A FlexCap Low Dropout Linear Regulator for 2.7V to 5.5V Inputs Check for Samples: LP38500-ADJ, LP38502-ADJ FEATURES DESCRIPTION • TI's FlexCap LDO's feature unique compensation that

TSC5304EDCP

Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Contextual Info: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation

FJE5304D

Contextual Info: FJE5304D NPN Triple Diffused Planar Silicon Transistor FJE5304D NPN Triple Diffused Planar Silicon Transistor High Voltage High Speed Power Switch Application • Wide Safe Operating Area • Built-in Free Wheeling diode • Suitable for Electronic Ballast Application

ZXTP19100CG

Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Contextual Info: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

j5304d

Contextual Info: FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B D-PACK 1 1. Base 2. Collector 3. Emitter

STTA106

Abstract: STTA106U mosfet morocco diodes STmicroelectronics marking T01 TURBOSWITCH E ULTRA-FAST HIGH VOLTAGE DIODE F126 smb marking stmicroelectronics STTA106RL
Contextual Info: STTA106/U TURBOSWITCH  ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 1A VRRM 600V trr (typ) 20ns VF (max) 1.5V FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS : FREEWHEEL OR BOOSTER DIODE ULTRA-FAST AND SOFT RECOVERY VERY LOW OVERALL POWER LOSSES IN

100OHM

Abstract: RD45HMF1 MOSFET "CURRENT source"
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

Contextual Info: OPA2541 Dual High Power OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● OUTPUT CURRENTS TO 5A ● POWER SUPPLIES TO ±40V ● FET INPUT The OPA2541 is a dual power operational amplifier capable of operation from power supplies up to ±40V and output currents of 5A continuous. With two monolithic power amplifiers in a single package it provides

Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)

A306

Abstract: STTA306B STTA306B-TR ST A306
Contextual Info: STTA306B TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS IF AV 3A VRRM 600 V trr (typ) 20 ns VF (max) 1.65 V K FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY.

Contextual Info: Preliminary Datasheet HIGH VOLTAGE FAST SWITCHING NPN POWER TRANSISTOR General Description Features The APT13005 series are high voltage, high speed, high efficiency switching transistor, and it is specially designed for off-line switch mode power supplies with

DALE NTHS-1206N02

Abstract: LTC1730 LTC1730-4 LTC1730EGN-4 LTC173ECGN-4 C1730
Contextual Info: LTC1730-4/LTC1730-4.2 Lithium-Ion Battery Pulse Charger with Overcurrent Protection U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LTC 1730 is a complete pulse charger for 1-cell lithium-ion batteries. When charging a depleted cell, the

2STR1230

Abstract: 2STR2230 JESD97
Contextual Info: 2STR1230 Low voltage fast-switching NPN power transistor General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Miniature SOT-23 plastic package for surface mounting circuits ■

2STN2540

Abstract: JESD97 N2540
Contextual Info: 2STN2540 Low voltage fast-switching PNP power bipolar transistor Preliminary Data General features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed ■ Surface mounting device in medium power SOT-223 package

transistor bc 245

Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243

HMPS650

Abstract: audio transistor
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6327-B Issued Date : 1992.09.09 Revised Date : 2000.09.20 Page No. : 1/4 HMPS650 NPN SILICON TRANSISTOR Description The HMPS650 is designed for audio transistor. Absolute Maximum Ratings • Maximum Temperatures

marking 705

Abstract: Zetex T 705 TRANSISTOR MARKING 705 FCX705 FCX705TA
Contextual Info: FCX705 120V PNP SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1.3V; IC= -1A DESCRIPTION This new PNP Darlington transistor provides users with very efficient performance combining low VCE (sat) and very high HFE to give extremely low on state losses at