TRANSISTOR M3A Search Results

TRANSISTOR m3a

Contextual Info: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES 0.120 3.04 0.110(2.80) PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA 0.056(1.40) Complimentary (NPN) device: MMBT4401

B632K

Abstract: D612 transistor 2SC536 D612K transistor 2sc1175 2SC536 transistor transistor b632k 2sc1175 2sd438 transistor B632
Contextual Info: Ordering number:ENN341G PNP/NPN Epitaxial Planar Silicon Transistor 2SB632, 632K/2SD612, 612K 25V/35V, 2A Low-Frequency Power Amplifier Applications Features Package Dimensions • High collector dissipation and wide ASO. unit:mm 2009B [2SB632, 632K/2SD612, 612K]

TRANSISTOR m3a

Abstract: 40240B STC42F
Contextual Info: STC42F Semiconductor NPN Silicon Transistor Descriptions PIN Connection • High voltage application Features • Collector-Emitter voltage : VCEO = 300V • Low Collector-Emitter saturation voltage : VCE sat = 0.5V(Max.) 4 1 2 3 Ordering Information Type No.

Contextual Info: STC42F NPN Silicon Transistor PIN Connection Descriptions • High voltage application Features • Collector-Emitter voltage : VCEO = 300V • Low Collector-Emitter saturation voltage : VCE sat = 0.5V(Max.) SOT-89 Ordering Information Type No. Marking Package Code

1N916

Abstract: MMBT4401 MMBT4403
Contextual Info: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary NPN device: MMBT4401 In compliance with EU RoHS 2002/95/EC directives

Contextual Info: MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR SOT-323 POWER Unit: inch mm 200mW FEATURES PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) Collector-emitter voltage VCE = -40V 0.087(2.20) 0.078(2.00) 40V 0.004(0.10)MIN. VOLTAGE Collector current IC =-600mA

MJ13332

Contextual Info: tSztnL-donauctoi , One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJ13332 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VcEO(sus) = 350V(Min) • High Switching Speed

transistor c 2026

Contextual Info: MMBT4403W PNP GENERAL PURPOSE SWITCHING TRANSISTOR POWER 200mW SOT-323 Unit: inch mm FEATURES PNP epitaxial silicon, planar design 0.087(2.20) 0.070(1.80) Collector-emitter voltage VCE = -40V 0.087(2.20) 0.078(2.00) 40V 0.004(0.10)MIN. VOLTAGE Collector current IC =-600mA

TRANSISTOR MARKING TE SOT363

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts SOT-363 Unit：inch mm • PNP epitaxial silicon, planar design 0.087(2.20) 0.074(1.90) • Collector-emitter voltage V CE = -40V 0.010(0.25) 0.087(2.20) 0.078(2.00)

TRANSISTOR m3a

Abstract: 1N916 MMBT4401 MMBT4403 1n916 equivalent
Contextual Info: MMBT4403 PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40V POWER 225mW FEATURES PNP epitaxial silicon, planar design Collector-emitter voltage VCE = -40V Collector current IC =-600mA Complimentary NPN device: MMBT4401 MECHANICAL DATA Case: SOT-23 Terminals: Solderable per MIL-STD-202, Method 208

Contextual Info: Philips Semiconductors ^53= 131 0030 1 2 b TO? • APX ^roductspecjfjcat^ UHF power MOS transistor BLF544 N AUER PHILIPS/DISCRETE FEATURES b'iE D PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability / • Gold metallization ensures

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives

MMDT4403

Abstract: transistor c 2026 TRANSISTOR m3a
Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE 40 Volts POWER 200 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE = -40V • Collector current I C = -600mA • In compliance with EU RoHS 2002/95/EC directives

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBTH24LT1 VHF Mixer Transistor NPN Silicon Motorola Preferred Device COLLECTOR 3 • Designed for • fT = 400 MHz Min @ 8 mA 1 BASE 3 2 EMITTER 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Rating Symbol

sot-23 marking 213

Contextual Info: MOTOROLA Order this document by MMBTH24LT1/D SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor NPN Silicon • Motorola Preferred Device COLLECTOR 3 Designed for • f j = 400 MHz Min @ 8 mA EMITTER CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS

TRANSISTOR m3a

Abstract: BTH24LT1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M BTH24LT1 VH F M ixer Transistor Motorola Preferred Device NPN Silicon • Designed for • f j = 400 MHz Min @ 8 mA 1 2 CASE 318-08, STYLE 6 SOT-23 TO-236AB MAXIMUM RATINGS Symbol Value Unit Collector-Em itter Voltage

TRANSISTOR MARKING TE SOT363

Contextual Info: MMDT4403 DUAL PNP GENERAL PURPOSE SWITCHING TRANSISTOR VOLTAGE POWER 40 Volts 225 mWatts FEATURES • PNP epitaxial silicon, planar design • Collector-emitter voltage V CE =- 40V • Collector current I C = -600mA • / 

Contextual Info: File Num ber 1211 HARRIS SEMICONU SECTOR BUX39 SbE , . M3a22?1 High-Current, High-Speed, High-Power Silicon N-P-N Planar Transistors 1JQ ^ 7 ^ 3 3 -/ 3 For Switching and Amplifier Applications in Industrial and Commercial Service Features: • M aximum area-of-operation curves fo r dc and pulse operation - kn limit

yg6260

Abstract: 2-10a1a AC701 2-16B1a 2-10R1A
Contextual Info: 4. T r a n s i s t o r U t i l i z a t i o n P r e c a u t i o n s When sem iconductors are being used, caution m ust be exercised in b o th shipping and installa­ tion. The following is an explanation o f precau­ tions to be observed when handling these devices.

Contextual Info: 19-1214: Rev 0; 7/97 m > k l> J X I > k l -s sS f D igitally Adjustable LCD Bias Supplies Features ♦ 1.8V to 20V Battery Input Voltage Output voltage can be set to a desired positive or nega­ tive voltage range with external resistors, and adjusted over that range with the on-board digital-to-analog con­

E 1803 DHI

Abstract: AX1621 AX1620 MBRS0540 1803 DHI
Contextual Info: D i g i t a l l y A d j u s ta b le LCD Bias S up plies Description _ F e a t u r e s The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically

Contextual Info: 19-1214; Rev 1; 1/98 jy\JY X A JV \ Digitally Adjustable LCD Bias Supplies The MAX1620/MAX1621 convert a 1.8V to 20V battery voltage to a positive or negative LCD backplane bias voltage. Backplane bias voltage can be automatically disabled when the d isp lay logic voltage is rem oved,

BC517 spice model

Abstract: bc547 spice model bc548 spice model h1 m6c MPS6595 bc557 Spice Model BF245 A spice spice model bf199 BC640 SPICE model transistor motorola Selector Guide Plastic-Encapsulated Transistors GreenLineTM Portfolio Devices S
Contextual Info: Selector Guide 1 Plastic-Encapsulated Transistors 2 GreenLine Portfolio Devices 3 Small-Signal Field-Effect Transistors and MOSFETs 4 Small-Signal Tuning and Switching Diodes 5 Tape and Reel Specifications and Packaging Specifications 6 Surface Mount Information

hep 154 silicon diode

Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
Contextual Info: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This