TRANSISTOR LSS Search Results

BUK541

Abstract: BUK541-100A BUK541-100B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount

TRANSISTOR FS 10 TM

Abstract: TRANSISTOR b100
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

S10080

Abstract: TJT-120
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in

transistor yd 317

Abstract: t 317 transistor BUK454-400B
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose

KDS 5J

Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in

transistor bu

Abstract: K444
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface

transistor B 764

Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

Contextual Info: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.

PJ 0349

Abstract: PJ 2399 0709s
Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA

BUK428-500B

Abstract: BUK428
Contextual Info: Ph ilips C o m p o n e n ts Data sheet status Product specification date of issue March 1991 BUK428-500B PowerMOS transistor GENERAL DESCRIPTION tsl-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The devicç is intended fo r use in

BUK454-500B

Abstract: BUK454-500A T0220AB K45450 tb 10 n 6
Contextual Info: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,

2SK508

Abstract: 076z marking K52 Vus-50V
Contextual Info: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0

transistor 5BM

Abstract: BUK443 BUK443-60A BUK443-60B
Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In

Contextual Info: im VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR m R N 5 R G S E R IE S IOUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu­ racy and lowest supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer­

sot marking code ZS

Abstract: Q62702-F1124
Contextual Info: BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 770A SOT-23 LSs Q62702-F1124

Contextual Info: SIEMENS BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Q62702-F1124 1= B Package LU It CM h Ordering Code LSs :o

Contextual Info: BF770A NPN Silicon RF Transistor 3
For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF770A LSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings

MARKING CODE 21E SOT23

Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings