TRANSISTOR LSS Search Results

TRANSISTOR LSS Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR LSS Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BUK541 Abstract: BUK541-100A BUK541-100B Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor BUK541-100A/B Logic level GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack	OCR Scan	BUK541-100A/B BUK541 -100B -SOT186 OT186; BUK541-100A BUK541-100B	PDF
Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK583-60A Logic level FET_, GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor In a plastic envelope suitable for surface mount	OCR Scan	BUK583-60A OT223 BUK583-60A	PDF
TRANSISTOR FS 10 TM Abstract: TRANSISTOR b100 Contextual Info: Philips Semiconductors Product specification PowerMOS transistor BUK563-100A Logic level FET_ GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface	OCR Scan	BUK563-100A BUK563-100A TRANSISTOR FS 10 TM TRANSISTOR b100	PDF
S10080 Abstract: TJT-120 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor BUK556-60H Logic level FET_ _ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK556-60H T0220AB BUK556-60H S10080 TJT-120	PDF
transistor yd 317 Abstract: t 317 transistor BUK454-400B Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK454-400B T0220AB transistor yd 317 t 317 transistor BUK454-400B	PDF
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK453-100A/B BUK453 -100A -100B T0220AB	PDF
Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope suitable tor surface mount applications. The device is intended for use in automotive and general purpose	OCR Scan	BUK481-100A OT223	PDF
KDS 5J Contextual Info: Philips Semiconductors Product specification PowerMOS transistor GENERAL DESCRIPTION BUK466-60A QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications. The device is intended for use in	OCR Scan	BUK466-60A SQT404 KDS 5J	PDF
transistor bu Abstract: K444 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK444-800A/B BUK444 -800A -800B -SOT186 transistor bu K444	PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION PINNING - SOT404 QUICK REFERENCE DATA SYMBOL PARAMETER w o > N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface	OCR Scan	OT404 BUK9656-30	PDF
transistor B 764 Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK545-200A/B BUK545 OT186 Fig-11. transistor B 764	PDF
Contextual Info: N AMFR PHILIPS/DISCRETE b'lE D • bbS3^31 0030775 0^1 * A P X Philips Semiconductors Product Specification PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	O220AB BUK551-100A/B BUK551 bb53T31 BUK551 -100A/E5 Q3D77c	PDF
Contextual Info: N AMER PHILIPS/DISCRETE bR E » bb53R31 0030625 4M7 « A P X Preliminary Specification Philips Semiconductors BUK556-60H PowerMOS transistor Logic level FET_ GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope.	OCR Scan	bb53R31 BUK556-60H O220AB bbS3T31 QD30fl2fl	PDF

PJ 0349 Abstract: PJ 2399 0709s Contextual Info: mUKM PA C K A R D W hot HEWLETT General Purpose, Low Current NPN Silicon Bipolar Transistor Technical Data AT-41532 Features • General Purpose NPN Bipolar Transistor Optimized for Low Current, Low Voltage Applications at 900 MHz, 1.8 GHz, and 2.4 GHz • Performance 5 V, 5 mA	OCR Scan	AT-41532 SC-70 OT-323) OT-323 SC-70) 1-800-Z35-031Z 5965-6167E PJ 0349 PJ 2399 0709s	PDF
BUK428-500B Abstract: BUK428 Contextual Info: Ph ilips C o m p o n e n ts Data sheet status Product specification date of issue March 1991 BUK428-500B PowerMOS transistor GENERAL DESCRIPTION tsl-channel enhancem ent mode field-effect pow er transistor in a plastic full-pack envelope. The devicç is intended fo r use in	OCR Scan	BUK428-500B 7110fl2ti -SOT199 BUK428-500B BUK428	PDF
BUK454-500B Abstract: BUK454-500A T0220AB K45450 tb 10 n 6 Contextual Info: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK454-500A BUK454-500B BUK454 -500A -500B T-39-11 T0220AB K45450 tb 10 n 6	PDF
2SK508 Abstract: 076z marking K52 Vus-50V Contextual Info: NEC Junction Field Effect Transistor 2SK508 N-Channel Silicon Junction Field Effect Transistor High Frequency Amplifier # */FEA TU RES I PACKAGE DIMENSIONS U n it . mm n y fs\|2 (gn.2) ~26 mS T Y P . ( V d s - 5.0 V, V GS-0 , f = 1.0 kHz) 2 . 8 ± 0.2 o1fl.Ci„ r l ' 0	OCR Scan	2SK508 O--00 2SK508 076z marking K52 Vus-50V	PDF
transistor 5BM Abstract: BUK443 BUK443-60A BUK443-60B Contextual Info: N AMER PHIL IPS /DISCRETE bTE D m ^^ 53^31 0 D 3 D5 1 S ÔS 5 H A P X Philips Sem iconductors Product Specification PowerMCS transistor G E N E R A L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic fuil-pack envelope. The device is Intended for use In	OCR Scan	0D3D51S BUK443-60A/B PINNING-SOT186 BUK443 transistor 5BM BUK443-60A BUK443-60B	PDF
Contextual Info: im VOLTAGE REGULATOR WITH EXTERNAL POWER TRANSISTOR m R N 5 R G S E R IE S IOUTLINE The RN5RG Series are voltage regulator ICs with an external power transistor with high output voltage accu racy and lowest supply current by CMOS process. Each of these voltage regulator ICs consists of a voltage refer	OCR Scan	OT-23-5 QQ02bMD	PDF
sot marking code ZS Abstract: Q62702-F1124 Contextual Info: BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BF 770A SOT-23 LSs Q62702-F1124	Original	OT-23 Q62702-F1124 S21/S12\| Dec-12-1996 sot marking code ZS Q62702-F1124	PDF
Contextual Info: SIEMENS BF 770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators ESP: Electrostatic discharge sensitive device, observe handling precaution! Pin Configuration Q62702-F1124 1= B Package LU It CM h Ordering Code LSs :o	OCR Scan	Q62702-F1124 OT-23 fl535b05 Q1S17GM	PDF
Contextual Info: BF770A NPN Silicon RF Transistor 3 For IF amplifiers in TV-sat tuners and for VCR modulators 2 1 VPS05161 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking BF770A LSs Pin Configuration 1=B 2=E Package 3=C SOT23 Maximum Ratings	Original	BF770A VPS05161	PDF
MARKING CODE 21E SOT23 Contextual Info: BF770A NPN Silicon RF Transistor • For IF amplifiers in TV-sat tuners and for VCR modulators 2 3 1 ESD Electrostatic discharge sensitive device, observe handling precaution! Type BF770A Marking LSs Pin Configuration 1=B 2=E 3=C Package SOT23 Maximum Ratings	Original	BF770A MARKING CODE 21E SOT23	PDF

TRANSISTOR LSS Search Results

TRANSISTOR LSS Result Highlights (5)

TRANSISTOR LSS Datasheets Context Search

BUK541

TRANSISTOR FS 10 TM

S10080

transistor yd 317

KDS 5J

transistor bu

y51 h 120c

transistor B 764

PJ 0349

BUK428-500B

BUK454-500B

2SK508

transistor 5BM

sot marking code ZS

MARKING CODE 21E SOT23