TRANSISTOR L 945 Search Results

BLX13C

Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
Contextual Info: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

d7250

Abstract: D-7250 1101A NZ34 Toshiba 726001 297131 SHENG iran
Contextual Info: TOSHIBA -CDISCRETE/OPTOJ ^ 9097250 TOSHIBA D IS C R E T E /O P T O SEMICONDUCTOR DEI TDTTSSD □ OlbT'i 3 3 99D TOSHIBA F IE L D 16993 ^~T-Ll2 r3 S ' EFFEC T TRANSISTOR ARRAY S 3 5 1 4 TECHNICAL DATA S IL IC O N HIGH POWER SWITCHING A PPLIC A TIO N S. HAMMER D R IV E,

TRANSISTOR k2185

Contextual Info: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D 1011250 000105b 510 687-4411 (800)542-3355 37b « C E X FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter relays. • Uses almost any power source from +5 to +32V D C

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

Contextual Info: CALEX M A N U F A C T U R I N G CO 52E D • 1 0 1 1 5 5 0 D D D 1 D 7 3 455 « C E X Constant Current Source 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 FAX: (510) 687-3333 'T - S 8 - U -Z > FEATURES Program Output by: Potentiometer Setting or Voltage Input

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

PD57045S

Abstract: 700B AN1294 PD57045 PD57045-E PD57045S-E
Contextual Info: PD57045-E PD57045S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 45W with 13dB gain @ 945MHz / 28V ■ New RF plastic package

Contextual Info: SD57045  RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel

Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead

irg 250

Abstract: IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K
Contextual Info: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C

lc 945 p transistor NPN

Abstract: BFR96S
Contextual Info: hhS3R31 D031A15 756 H A P X Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFR96S N AUER PHILIPS/DISCRETE DESCRIPTION hRE T> PINNING NPN transistor in a plastic SOT37 envelope primarily intended for MATV applications. The device

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

C-150

Abstract: IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576 IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

TO-220AB transistor package

Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C

bd7995

Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Contextual Info: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND

ic 4027

Abstract: 3019 npn transistor transistor 30 j 124 7498 ic B12V105 transistor s parameters noise Silicon Bipolar Transistor 35 MICRO-X ic 4027 information microwave transistor SOT-23J
Contextual Info: BIPOLARICS, INC. Part Number B12V105 NPN LOW NOISE SILICON MICROWAVE TRANSISTOR PRODUCT DATA SHEET FEATURES: • High Gain Bandwidth Product f = 10 GHz typ @ I C = 10 mA t • DESCRIPTION AND APPLICATIONS: Bipolarics' B12V105 is a high performance silicon bipolar

Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

transistor BR 9013

Abstract: C-150 IRFI840G IRGIB15B60KD1 swiching 30A current source
Contextual Info: PD- 94599A IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

UZD225

Abstract: for triangulation sensor zener diode 531 1969inch capacitive level sensor circuit drawing M1021 UZD821 UZD822 UZD823 UZD824
Contextual Info: UZD22,225 series 0.6.10 12:08 Page 1 DIE-CAST HOUSING TRIGONOMETRIC AREA REFLECTIVE PHOTOELECTRIC SENSORS UZD22 UZD225 HIGH IMMUNITY TO TARGET COLOR CHANGES WITH DIE-CAST BODY Not Affected Background Object The sensor does not detect background objects. It employs a triangulation

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

ZTX415

Abstract: AVALANCHE TRANSISTOR FMMT415 67A SOT 23 6 avalanche mode transistor avalanche pulse generator
Contextual Info: Application Note 8 Issue 2 January 1996 The ZTX415 Avalanche Mode Transistor An Introduction to Characteristics, Performance and Applications Neil Chadderton Introduction Avalanche mode devices can provide extremely high switching speeds and are capable of producing current outputs

LDMOS transistor 1W

Abstract: J-STD-020B LET9060S PD57030S AN1294 smd transistor AO capacitor 0.1uf 500v
Contextual Info: LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 17 dB gain @ 945 MHz / 26V • NEW RF PLASTIC PACKAGE