TRANSISTOR L 945 Search Results

BLX13C

Abstract: BY206 PHILIPS 4312 amplifier philips carbon film resistor 3mss HF SSB APPLICATIONS RF 28 v
Contextual Info: bSE D m 7110ÛEL □Db34Mcl 42Ô M P H I N BLX13C PHILIPS I N T E R N A T I O N A L _ H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting amplifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

Contextual Info: h ~7 > V DTC144WU/DTC144WK/DTC144WS/DTC144WF DTC144WL/DTC144WA/DTC144WV $ / T ransistors DTC144WU/DTC144WK/DTC144WS DTC144WF/DTC144WL/DTC144WA DTC144WV l> Z 7> y 7, < "j ^-/Transistor Switch Digital Transistors Includes Resistors • £t-ffJ^f>£l2/Dimensions (U n it: mm)

bTI51

Abstract: fsjc F4CJ 2SJ209 TF230
Contextual Info: 5s—S ,T NEC • 2/— f~~ M O S Field Effect Transistor A l? r / v f7 2SJ209 MOS FET X ' f ' y & 2 S J 2 0 9 l i P f - ^ ^ ^ * i ^ M O S FETT", 5 < fc > yt > ^M O S FET 7 M ? T f F R K 2.8 ±0.2 t o IÌ.X4 "/r &0, t ' ^ / K U S S - 1.5 L T ^ iiT 't o I-

ic ntp- 3000

Abstract: IIH13 Scans-0088096
Contextual Info: z r— S 7 • 5^— h Com pound Transistor C E2A 3Q í&í¡fcF*3J & N P N x C E2A 3Q • i' t — ¿ Í S I i» ^ Y iP ^ M L tz , ^ H ig h 9 f- i i - n ^ M '> l □ ^ Vs? > '> * ? h F E ÎS ÎÆ R Â h 7 's ^ w 'J X 9 X % ? - r O A i K 7 i y ’m t l - C f t i l T t o

2sc4814

Abstract: transistor C017 258 c017
Contextual Info: X — £ • y h — V y a > /\°7 - b 7 > v z .$ Silicon Power Transistor 2SC4814 NPN X tf £ V T Jls B y ' j 3 > h 7 > ÿ X ^ Í S * X < 7 Í > ^ f f l 2 S C 4 8 1 4 à, «F lÊ M W lÆ V fà h FE? j y c V ' ' ! ? - h 7 > ïs X ? T t o OA, F A ^ è ^ ^ / U X ^ - ^ - ^ y y '>

2SA1610

Abstract: l 0734 2SC4176 L0734 846 B34 t460 transistor
Contextual Info: SEC '> • ; = ] > l * 7 > Silicon Transistor lÏ T / \ f 7 2SC4176 « it : mm O X - i -y •f- > ? " i Î ) £ * i i â v > c, O 1 ? 2.1+0.1 ;7 tâ fP 1 iC rE * i ' j ' ? 1.25 ±0.1 O ÎIJ Îf ^ lp If i^ ë ^ o o 2SA 1610 £ 3 > 7 ° I) / > ? U tM È ffl-ü ë i t o

2N6617

Abstract: HXTR-6101 HXTR-6102 HXTR6102 2N6617 S parameters HPAC-70GT transistor HXTR-6101
Contextual Info: COMPONENTS Features 2JÏ8 ¡0.078 1.57l0.062"f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

2SD552

Abstract: QS 100 NPN Transistor 2SB552 AC73 static characteristic BO180 a944 transistor 5Ft 2SD552-BN
Contextual Info: 2SD SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR 552 TENTATIVE o v ry ?m O I It X I ffl INDUSTRIAL APPLICATIONS O DC-DCay/f-ifl » Pow er A m p l i f i e r , o D O -D C C o n v e r t e r a n d R e g u l a t o r A p p l i c a t i o n s . • ! 8 B5 5 U • U n i t i n mm

Hewlett-Packard application note 967

Abstract: HPAC-70GT 2N6617 HXTR-6102 equivalent of transistor D 2331 hewlett packard application note 972 2N6617 S parameters TRANSISTOR noise figure measurements application HXTR-6101 ghz transistor
Contextual Info: COMPONENTS Features 2 JÏ8 ¡0.078 1.5 7 l0 .0 6 2 " f " BIPOLAR LOW NOISE FIGURE 2.8dB at 4GHz, Typical 2N6617) 2.5dB at 4GHz, Typical (HXTR-6102) TRANSISTORS 2N6617 (HXTR-6101) HXTR-6102 LOW NOISE TRANSISTOR H E W L E T T ^ PACKARD HIGH GAIN 9.0dB Typical Gain at NF Bias Conditions

jft 1411

Abstract: c947 100 N31 transistor mur 641 M 9619 2SK2109 transistor 9619 nec 7824 ki 30 if 35acr
Contextual Info: K ^ > V J* # MOS Field Effect Transistor 2SK2109 MOS FET 5 £ X < m m 2S K 2 1 0 9 & N 3 1 * *;U « É M O S F E T ? * U , 5 hiz J: 6 ¡t& ÏE S b jF n Jfë fc X < -y ^ > moL :mm ? m T ? to 1.5 ±0.1 <D77 ? ? j . J L - $ m W t f P , D C /D C = ] > / * - £ £ £ i : : j l i S ' ? f o

2SC4813

Abstract: VDF pn C40r
Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è

sje 2762

Abstract: uPA671T transistor a935 a935 transistor ic-8845
Contextual Info: h — '> U =1 > Silicon Transistor UPA671T P N P X l h 7 > fé J ^ Æ v 7 ^ 6 t f > 2 IU îèS Ü 'f iÆ /¿PA671TO, h 7 > v Z $ £20Ï&F*3Ü? U/c 5 K x / \ '< x U , Ü H æ j f CD[S]±, x h ^ g lM i;: » i l / S t o <=D m o S C - 7 0 / \° "J * T- v £ IH D tt- - f X < D / \" "J >t -

MOTOROLA POWER TRANSISTOR lc 945

Abstract: zener ap 474 940 629 MOTOROLA 113
Contextual Info: MOTOROLA O rder this docum ent by M RF158/D SEMICONDUCTOR TECHNICAL DATA The RF TMOS Line Power Field Effect Transistor MRF158 N-Channel Enhancement Mode D esigned fo r w id e b a n d la rg e -s ig n a l am p lifie r and o scilla to r ap plicatio ns to 500 MHz.

TC7988

Abstract: 2SK2158 MARKING J1A transistor WT7 J Fet marking 2 AW marking N00 3250Q
Contextual Info: M O STféïl-f^ jÎJiP: h 37 > v J X ^ M O S Field Effect Transistor r ^ j_ C I E • •fc I ÌK N 2 S K 2 1 5 8 MOS FET r ü iH X -f y 2 S K 2 1 5 8 I Î1.5 V l E l i £ -f U , fÉ ÎŒ T ig B T 't , ÿ 9 Æ3 * J U i ^ M O S F E T T 5* A 'O K -7 - f 'V y

2SC200

Abstract: 2SA923 Transistor AF 138 2SC2089 2SC1908 2SC1740 transistor 2SC805A 138D 2SC1740 2SC2021
Contextual Info: - 5 - FOR U SE BY E L E C T R IC IA N S O V E R S E A S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

L46R

Abstract: 96 mfu DIODE HR 8665 PA606T PA607T 4N51 5M1E 328l
Contextual Info: M O S M O S Field Effect Transistor «PA607T P f t ^ M O S F E T 6 t i > 2 m ^~ ¿ ¿ P A 6 7 T(i, M O SF E T£2Hi1 * 1 /1L * :5- i )V K f ' ^ M X T h 9 , Ü 3 X h <7)ffl 0.32 + 0.1 - 0.05 iJ& te n W tL tto «F a JLH ~ +1 o S C -5 9 0 - 0 .1 MOS £ F E T £ 2 3? i[ * J / l

TRANSISTOR k2185

Contextual Info: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D 1011250 000105b 510 687-4411 (800)542-3355 37b « C E X FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter relays. • Uses almost any power source from +5 to +32V D C

Contextual Info: LET9070CB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet - production data Features • Excellent thermal stability • Common source configuration • POUT @ 28 V = 70 W with 17 dB gain @ 945 MHz • BeO free package

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

Contextual Info: CALEX M A N U F A C T U R I N G CO 52E D • 1 0 1 1 5 5 0 D D D 1 D 7 3 455 « C E X Constant Current Source 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 FAX: (510) 687-3333 'T - S 8 - U -Z > FEATURES Program Output by: Potentiometer Setting or Voltage Input

AN1294

Abstract: J-STD-020B PD57030-E PD57030S-E PD57030STR-E PD57030TR-E
Contextual Info: PD57030-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 30 W with 14dB gain @ 945 MHz / 28 V ■ New RF plastic package Description

Contextual Info: PRELIMINARY M w T - 1 4 GP/SP/HP U s kß MicroWave Technology 10 GHz HIGH POWER GaAs MESFET CHIP 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • • • • • 2 WATT POWER OUTPUT AT 6 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL / GOLD GATE

MWT671HP

Contextual Info: MwT - 6 18 GHz High Power G aAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 292 tool iseJ I—I » —I U J Isol - 33*-CHIP THICKNESS = 12 5 M ORONS MwT-6 • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHZ