kd226
Abstract: KD522B transistor c 6073 transistor KT 209 M transistor kt 801 KD226B KT805AM Diode KD 521 a transistor KT 209 4413.13-02
Contextual Info: SERVICE-MITTEILUNGEN V E B RFT I N D U S T R I E V E R T R I E B ¡D j RUNDFUNK UND F E R N S E H E N raa/o te/ev/s/on | - Ausgabe 1968 M am 4-5 Seite 1 - 8 Mitteilung aus dem VEB RFT IV RuF Leipzig/S 1. Regenerierung von UKW-Tunern 1.1. Allgemeine Informationen
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2SD1623
Abstract: FP303 ITR11096 SB05-05CP
Contextual Info: Ordering number:ENN4657 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP303 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP303] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky
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ENN4657
FP303
FP303]
25max
FP303
2SD1623
SB05-05CP,
ITR11096
SB05-05CP
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2SD1620
Abstract: FP304 ITR11110 ITR11111 ITR11112 SB0703C
Contextual Info: Ordering number:ENN4926 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP304 DC-DC Converter Package Dimensions unit:mm 2099A [FP304] 5 4 3 2 1 0.4 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector 0.2min 1.5 0.5 1.57
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ENN4926
FP304
FP304]
25max
FP304
2SD1620
SB0703C,
ITR11110
ITR11111
ITR11112
SB0703C
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2SD1620
Abstract: FP304 ITR11110 ITR11111 ITR11112 SB0703C
Contextual Info: Ordering number:ENN4926 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP304 DC-DC Converter Package Dimensions unit:mm 2099A [FP304] 5 4 3 2 1 0.3 0.4 1:Base 2:Collector 3:Emitter 4:Cathode 5:Anode 6:Cathode 7:Collector 0.2min 1.5 0.5 1.57
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ENN4926
FP304
FP304]
25max
FP304
2SD1620
SB0703C,
ITR11110
ITR11111
ITR11112
SB0703C
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M5207L05
Abstract: M5207L01/M5207L05
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5 2 0 7 L is a variable gm-type VCA Voltage Control Amplifier IC designed for linear controlled electronic volume control. The IC offers capability of controlling each channel
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M5207L01
/M5207L05
M5207L01
M5207L05
M5207L05
M5207L01/M5207L05
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4336
Abstract: 2SK303 FC13 koyo ENN4336
Contextual Info: Ordering number:ENN4336 N-Channel Junction Silicon FET FC13 Low-Frequency General-Purpose Amp, Differential Amp, Analog Switch Applications Package Dimensions unit:mm 2095A [FC13] 0.4 6 0.16 4 0 to 0.1 1.6 2.8 • Composite type with 2 FETs contained in the CP
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ENN4336
2SK303,
4336
2SK303
FC13
koyo
ENN4336
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6P45S
Abstract: 6N23P 6P14P Selenstab 5 GE 200 AF Hochsp.leitg 6F1P service-mitteilungen D814D D814A hsk 103 taa550
Contextual Info: SERVICE-MITTEILUNGEN V E B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N m m 1r a d i o - television QKTOBKR | 1 9 8 1 11 SEITE Mitteilung auf dem 7KB Fernsehgerätewerke "Friedr. Sögels" Staßfurt Servlcehi nwels zum SECAM - IS - Dekoder A 295 D» A 220 D
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TGLIO395
III/I8/379
6P45S
6N23P
6P14P
Selenstab 5 GE 200 AF Hochsp.leitg
6F1P
service-mitteilungen
D814D
D814A
hsk 103
taa550
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MATRA
Abstract: t4211 MCT12K MC10K
Contextual Info: 4TE — MATRA D H H S Preliminary • SflböMSb GÜ0E3Ü4 43T ■ H M H S =T 7= iiiiK iiii l i T H January 1991 ASIC HI-REL DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES SUPER CMOS TECHNOLOGY -1 nm DRAWN 2 METAL LAYERS FLEXIBLE I/O CONFIGURATION : INPUT,
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Halbleiterbauelemente DDR
Abstract: BEL 639 transistor Sowjetische Halbleiter-Bauelemente KBC111 k4213 Germanium Transistor katalog radio fernsehen elektronik elektronik DDR KT904 KT372
Contextual Info: K a ta lo g sowjetischer H albleiterbauelem ente Si« linden im K a t a lo g t e il : Der hiermit unseren Lesern vorgelegte Katalog sowjetischer Transistoren, Dioden und integrierter Schaltkreise ist das Resultat enger Zusammen arbeit zwischen dem VEB Elektronikhandel Berlin und der Redaktion der
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KT 819 transistor
Abstract: 2N2222A 338 SF129D SF137D SSY20B KT819W SF127E KFY18 321 KP303W KFY18
Contextual Info: Deutsche Post NfD Studiotechnik Fernsehen Bauelemente - Mitteilung Nr. 6 TRANSISTORVERGLEICHSLISTE Herausgebers Halbleitervergleichsgruppe Studiotechnik Fernsehen Deutsche Post Studiotechnik Fernsehen Bauelemente-Mitteilung Nr. 6 Dez. 79 N f D T r a n s i s t o r v e r g l e i c h s l i s t e
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M5207L01
Abstract: transistor M152 5207L05 5207L01 transistor KT 209 M MITSUBISHI GATE ARRAY m5241 M5207L MS207L01 M5207L05
Contextual Info: MITSUBISHI SOUND PROCESSOR ICs M5207L01 /M5207L05 LINEAR CONTROL DUAL VCA IC DESCRIPTION The M 5207L is a variable gm-type VCA Voltage Control Am plifier IC designed fo r linear controlled electronic volume control. The IC o ffe rs capability o f controlling each channel
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M5207L01
/M5207L05
5207L
M5207L01
5207L05
transistor M152
5207L05
5207L01
transistor KT 209 M
MITSUBISHI GATE ARRAY
m5241
M5207L
MS207L01
M5207L05
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ITR110
Abstract: 2SC4520 FP302 ITR11082 SB05-05CP 72301
Contextual Info: Ordering number:ENN4726 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode FP302 DC-DC Converter Applications Package Dimensions unit:mm 2099A [FP302] 4.5 3.4 2.8 0.5 1.8 0.5 7 6 1.0 1.5 0.5 1.57 2.5 1.0 4.25max 0.5 • Composite type with NPN transistor and Schottoky
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ENN4726
FP302
FP302]
25max
FP302
2SC4520
SB05-05CP,
ITR110
ITR11082
SB05-05CP
72301
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EN4494
Abstract: 2SA1416 2SC3646 FP205 marking 205
Contextual Info: Ordering number:EN4494 FP205 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP205 is composed of 2 chips, one being
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EN4494
FP205
FP205
2SA1416
2SC3646,
FP205]
EN4494
2SC3646
marking 205
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2SB1122
Abstract: 2SD1622 FP203 2SB1122 equivalent
Contextual Info: Ordering number:EN4496 FP203 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuits Features Package Dimensions • Composite type with 2 transistors of PNP transistor and NPN transistor,facilitating high-density mounting. · The FP203 is formed with chips, being equivalent to
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EN4496
FP203
FP203
2SB1122
2SD1622,
FP203]
2SD1622
2SB1122 equivalent
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2097a
Abstract: 2SB1123 2SD1623 FP204 EN4493 marking 204
Contextual Info: Ordering number:EN4493 FP204 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP204 is composed of 2 chips, one being
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EN4493
FP204
FP204
2SB1123
2SD1623,
FP204]
2097a
2SD1623
EN4493
marking 204
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2097a
Abstract: 2SA1728 2SC4519 FP206 marking 206
Contextual Info: Ordering number:EN4778 FP206 PNP/NPN Epitaxial Planar Silicon Transistors Push-Pull Circuit Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor in one package, facilitating high-density mounting. · The FP206 is composed of 2 chips, one being
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EN4778
FP206
FP206
2SA1728
2SC4519,
FP206]
2097a
2SC4519
marking 206
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2SA1370
Abstract: 2SC3467 FP212
Contextual Info: Ordering number:EN4497 FP212 PNP/NPN Epitaxial Planar Silicon Transistors High-Voltage Driver Applications Features Package Dimensions • Composite type with a PNP transistor and an NPN transistor, in one package, facilitating high-density mounting. · The FP212 is composed of 2 chips, one being
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EN4497
FP212
FP212
2SA1370
2SC3467,
FP212]
2SC3467
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BX-1457
Abstract: k 1457 2SD1620 FP304 SB0703C
Contextual Info: Ordering number:EN4926 FP304 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Features Package Dimensions • Complex type with an NPN transistor and a Schottoky barrier diode facilitating high-density mounting. · The FP304 is composed of 2 chips, one being
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EN4926
FP304
FP304
2SD1620
SB0703C,
FP304]
BX-1457
k 1457
SB0703C
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SRB 012.028
Abstract: granat 216 KD410A service-mitteilungen junost 603 SY360 keramische Werke Hermsdorf KT339A SES N 2405 sy 360
Contextual Info: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERN SEH EN g M S 1r a d io - television 1 7 J 0 L I 1 9 8 <f Mitteilung aus dem VEB Stern-Radio Sonneberg Neue AM/FM-ZF-Filter in Heimempfändern Auf Grund technischer Weiterentwicklung und Qualität8verbessernder
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OO-08
00-y0
neu105
225/PA
SRB 012.028
granat 216
KD410A
service-mitteilungen
junost 603
SY360
keramische Werke Hermsdorf
KT339A
SES N 2405
sy 360
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2SC4520
Abstract: FP302 SB05-05CP
Contextual Info: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.
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EN4726
FP302
FP302
2SC4520
SB05-05CP,
FP302]
SB05-05CP
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FP302
Abstract: 2SC4520 SB05-05CP
Contextual Info: Ordering number:EN4726 FP302 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with NPN transistor and Schottoky barrier diode facilitating high-density mounting.
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EN4726
FP302
FP302
2SC4520
SB05-05CP,
FP302]
SB05-05CP
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2SC2314
Abstract: 2sc2314F ITR05122 ITR05118 ITR05119 ITR05120 ITR05121 2sc2314 transistor
Contextual Info: Ordering number:ENN485F NPN Epitaxial Planar Silicon Transistor 2SC2314 27MHz CB Transceiver Driver Applications Package Dimensions unit:mm 2009B [2SC2314] 8.0 2.7 1.5 7.0 3.0 11.0 4.0 3.0 1.6 0.8 0.8 0.6 15.5 0.5 2 3 1 : Emitter 2 : Collector 3 : Base SANYO : TO-126
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ENN485F
2SC2314
27MHz
2009B
2SC2314]
O-126
2SC2314
2sc2314F
ITR05122
ITR05118
ITR05119
ITR05120
ITR05121
2sc2314 transistor
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transistor KT 209 M
Contextual Info: Preliminary IlM lI September 1989 OPEN ASIC DATA SHEET MC GATE ARRAY SERIES 0.8 MICRON SCMOS FEATURES . SUPER CM OS TECHNOLOGY -1 um DRAWN 2 METAL LAYERS . FLEXIBLE I/O CONFIGURATION : INPUT, OUTPUT, THREE-STATE, VCC & VSS . SILICON GATE 0.8 |im EFFECTIVE CHANNEL
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2SD1621
Abstract: FP301 SB07-03C
Contextual Info: Ordering number:EN4539 FP301 TR:NPN Epitaxial Planar Silicon Transistor SBD:Schottky Barrier Diode DC-DC Converter Applications Features Package Dimensions • Composite type with 2 devices NPN transistor and Schottoky barrier diode contained in one package,
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EN4539
FP301
FP301
2SD1621
SB07-03C
FP301]
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