TRANSISTOR KSH 200 Search Results

KSH 200 TRANSISTOR

Abstract: Transistor ksh 200 E506
Contextual Info: KSH32/32C PNP EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS • L o a d F o rm e d fo r S u rfa c e M o u n t A p p lic a tio n N o S u ffix • S tra ig h t L e a d (I.P A C K ,

ksh 200 TRANSISTOR equivalent

Abstract: KSH 200 TRANSISTOR
Contextual Info: KSH112 KSH112 D-PAK for Surface Mount Applications • • • • • High DC Current Gain Built-in a Damper Diode at E-C Lead Formed for Surface Mount Applications No Suffix Straight Lead (I-PAK, “ - I “ Suffix) Electrically Similar to Popular TIP112

TIP29 transistor

Contextual Info: KSH29/29C NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE AMPLIFIER LOW SPEED SWITCHING APPLICATIONS D-PACK FOR SURFACE MOUNT APPLICATIONS D-PAK Load Formed for Surface Mount Application No Suffix Straight Lead ( L A C K , 1 “ Suffi x) Electrically Similar to Popular TIP29 and TIP29C

Contextual Info: KSH41C KSH41C General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications • Lead Formed for Surface Mount Application No Suffix • Straight Lead (I-PAK, “- I” Suffix) • Electrically Similar to Popular TIP41 and TIP41C

MURS1100

Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100
Contextual Info: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3

SD1406

Abstract: SD2058 KSD201 sb1150 SD-1406
Contextual Info: TRANSISTORS FUNCTION GUIDE 2.1.6 T0-220 F Type T ran sisto rs 'c VcEO (A) (V) Device Type V ce NPN 1.5 150 3 55 Condition K SC 3 2 9 6 Condition Hfe lc lc (V) (A) MIN MAX (A) (A) K SA 130 4 10 0.5 40 75 0.5 0.05 K SA 1614 5 0.5 40 240 1 0.1 PNP V CE(sat)(V) Condition

tny 175

Abstract: TDA8179 TNY IC POWER SUPPLY vd56 TDA8179S TV booster diagram 7707 u711 tny 200
Contextual Info: 7^5=1537 £jJ 005400=1 1 m 'T - 7 l~ c n - \ \ S C S -T H O M S O N TDA8179 ilLO S G S-THOMSON 30E D TV VERTICAL DEFLECTION BOOSTER ADVANCE DATA POWER AMPLIFIER FLYBACK GENERATOR 105V PEAK THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTION Designed for Monitors and high performance TVs,

GE TRIAC SC40B

Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
Contextual Info: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can

IRF9210

Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
Contextual Info: PRODUCT INDEX FUNCTIONAL SELECTION GUIDE BIPOLAR TRANSISTOR DESCRIPTION MRTNO. 2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 KSP13 KSP2222A KSP27 KSP2907A KSP42 KSP44 KSP56 KSP92 KST10-TF KST2222A-TF KST2484-TF KST2907-TF KST3904-TF KST3906-TF

transistor D128

Abstract: TC518129 D128 transistor transistor d133 ksh 200 TRANSISTOR equivalent TRANSISTOR 80l
Contextual Info: TOSHIBA TC518129BPL/BSPL/BFL/BFWL/BFIL-70/80/10 TC518129BPL/BSPL/BFL/BFWL/BFIL-70L/80L/10L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description The TC518129B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518129B utilizes

Contextual Info: O K I semiconductor MSM514100_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE G EN ERA L DESCRIPTION The MSM514100 ¡5 a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The technology used to fabricate the MSM514100 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I semiconductor MSM5141OOA/AL_ 4,194,304-Word x 1-Bit DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The MSM514100A/AL is a new generation dynamic RAM organized as 4,194,304-word x 1-bit. The tech n o lo gy used to fab ricate the M SM 514100A/AL is O KI's CMOS silicon gate process

DD1750

Contextual Info: O K I Semiconductor MSM5117900 2,097,152-Word x 9-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5117900 is a new generation D ynam ic RAM organized as 2,097,152-w ord x 9-bit configuration. The technology used to fabricate the M SM 5117900 is OKI's CMOS silicon gate process technology.

TRANSISTOR 2SC 983

Abstract: INTERNATIONAL RECTIFIER TNR*G 1000C HFA16PA120C
Contextual Info: International i»r:Rectifier_ HEXFRED U n its C h a ra c te ris tic s 1200 V V rrm If A V 8.0 A trr (ty p ) 28 ns 140 nC Q r r (ty p ) HFA16PA120C ULTRA FAST, SOFT RECOVERY DIODE M a jo r R a tin g s a n d C h a ra c te r is tic s (p er Leg) Vr Provisional Data Sheet PD-2.361

TC88411F

Abstract: TC88411
Contextual Info: INTEGRATED OSHIBA CIRCUIT TECHNICAL DATA TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TC58A040 F SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E2PROM TENTATIVE DATA DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory

new Jj8

Contextual Info: TO SH IB A TC58A040F TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 MBIT 4 M X 1 BITS CMOS AUDIO NAND E^PROM DESCRIPTION The TC58A040 is a 5-volt 4 Mbit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits X 128 pages X 128 blocks.

Contextual Info: PRELIMINARY 131,072 W ORDS X 8 BIT CMOS PSEUDO STATIC RAM DESCRIPTION The 7C518129A-LV Family is a 1M bit high speed CMOS Pseudo Static RAM organized as 131,072 words by 8 bits. The TC518129A-LV Family utilizing one transistor dynamic memory cel! with CMOS

transistor equivalent ksh200

Abstract: ksh200 TRANSISTOR equivalent ksh200 equivalent analog 7368 TLE7368E fairchild ignition controller 7368G PG-DSO-36 TLE7368 7368
Contextual Info: T ar ge t d at a s h eet , R ev 0 .61 , 2 00 6- 12- 1 8 TLE 7368 Next generation micro controller supply Automotive Power N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany

transistor equivalent ksh200

Abstract: ksh200 equivalent TLE7368 PG-DSO-36-24 TLE7368E TLE7368E,PG-DSO-36-24 P-DSO-36-12 ksh200 TRANSISTOR equivalent TLE7368G 7368G
Contextual Info: Data Sheet, Rev. 1.1, November 2007 TLE7368 Next Generation Micro Controller Supply Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Contextual Info: TOSHIBA 4 ÔE L06IC/NEH0RY •=10=17240 D G S 5 D 7 S D ■lit! 131,072 WORDS x 8 BIT CMOS PSEUDO STATIC RAM PRELIMINARY DESCRIPTION The TC518129A-LV Fam ily is a 1M bit high speed CMOS Pseudo Static RAM organized a s 131,072 w ords b y 8 bits. The TC518129A-LV fam ily utilizing one transistor dynamic m em ory cell w ith CMOS

TLE7368

Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor equivalent ksh200

Abstract: TLE7368G ksh200 equivalent TLE7368 TLE7368-3E TLE7368E TLE7368-2E 4139 sensor ksh200 TRANSISTOR equivalent TLE368E
Contextual Info: TLE7368 Next Generation Micro Controller Supply TLE7368G TLE7368E TLE7368-2E TLE7368-3E Data Sheet Rev. 2.1, 2010-11-22 Automotive Power TLE7368 Table of Contents Table of Contents 1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

D880 voltage regulator

Abstract: B0244C TIP28C transistor d880 VOLTAGE REGULATOR D880 D880 TRANSISTOR TIP28 A992 transistor E13009 ksd-180
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition Vet: (V) Ic (A) hpe Condition Vce(sat), VeE(sat)(v) Condition (V) (mA) MAX KST56(2G) KST55(2H) 80 0.5