TRANSISTOR K70 Search Results

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

k72 transistor

Abstract: transistor k72 2N5143 MPS-K72 k72 npn TRANSISTOR C 2026 MPS-K71 544S K70 Package TP6224
Contextual Info: CDDilPIIC EconolineR Plastic-Molded D r K H j U C Silicon SEPT Transistors ★ - T A B L E 1 TRANSISTOR KITS MPS-K20, M PS-K21 and M P S-K 22 are three, five and nine transistor kits consisting of M P S-A 20's with various hFE selections. M PS-K70, M PS-K71 and M PS-K72 are three, five and nine transistor kits consisting of M P S-A 70’s with various hFE selections.

transistor k70

Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

KI 2222A

Abstract: transistor 2222a sot-363 MARKING l0
Contextual Info: Central CMKT2207 Semiconductor Corp. SURFACE MOUNT ULTRAmini COMPLEMENTARY SILICON TRANSIS­ TORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 consists of one 2222A NPN transistor and an individual isolated complementary 2907A PNP transistor, manufactured by the epitaxial planar

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

transistor k70

Abstract: transistor k70-20 K70 Package CMKT2207 "dual TRANSISTORs" sot363
Contextual Info: CMKT2207 ULTRAmini SURFACE MOUNT COMPLEMENTARY TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount

CMKT2207

Contextual Info: CMKT2207 ULTRAmini SURFACE MOUNT COMPLEMENTARY TRANSISTORS Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT2207 type is a dual complementary silicon transistor manufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount

k6z transistor

Abstract: sot-23 marking code K70 K70 Package DS11302 k70 transistor BS870 BS870-7-F "Marking code" K70 SOT-23 marking k70
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

marking s70

Abstract: marking k70
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR POWER SEMICONDUCTOR Features • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 A D TOP VIEW Mechanical Data •

BS870-7-F

Abstract: k6z transistor K70 Package k70 sot 23 BS870 DS11302 "Marking code" K6Z SOT-23 sot-23 marking code K70
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free/RoHS Compliant Note 2

Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features • • • • • • Mechanical Data • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed

MARKING TRANSISTOR BD RC

Contextual Info: TK702xx 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 8 µA Typ) Low Dropout Voltage (30 mV Typ)

TK70D06J1

Contextual Info: TK70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK70D06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

Contextual Info: TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK70A06J1 Switching Regulator Application Unit: mm • High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

MARKING TRANSISTOR BD RC

Abstract: IC-135-TK70110 K701 ic135
Contextual Info: TK701xx 1.0 V LOW DROPOUT LINEAR REGULATOR FEATURES APPLICATIONS • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 10 µA Typ) Low Dropout Voltage (30 mV Typ)

TK70A06J1

Abstract: K70A06J
Contextual Info: TK70A06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK70A06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

transistor k70

Abstract: DSA00180145
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR SPICE MODEL: BS870 Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage · · · · · · Dim Min Max A 0.37 0.51 B

Contextual Info: SPICE MODELS: BS870 BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage · · · · · · Dim Min Max A 0.37 0.51

k70 sot 23

Abstract: Marking s70 BS870 DS11302 transistor k70
Contextual Info: BS870 VISHAY N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR LITEM ZI y POWERSEMICONDUCTOR Features Low On-Resistance Low Threshold Low Input Capacitance Fast Switching Speed Low Input/Output Leakage SOT-23 -H : h - A T TOP! VIEW B Mechanical Data Case: SO T-23, Molded Plastic

transistor k70

Abstract: marking k70 BS870 BS870-7 DS11302 J-STD-020A k70 transistor
Contextual Info: SPICE MODELS: BS870 BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage · · · · · · Dim Min Max A 0.37 0.51

AF MARKING CODE sot-25

Abstract: sot-25 marking AF
Contextual Info: 13ÌTO K O TK702xx 1.03 V REGULATOR WITH ON/OFF SWITCH FEATURES APPLICATIONS Low Input Voltage Operation Single Battery Cell Internal PNP Transistor Built-In Shutdown Control (Off Current, 8 (¿A Typ) Low Dropout Voltage (30 mV Typ) Very Small Surface Mount Package (SOT-25)

TK70D06J1

Contextual Info: TK70D06J1 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Ultra-High-Speed U-MOSⅢ TK70D06J1 Switching Regulator Application • Unit: mm High-Speed switching • Small gate charge: Qg = 87 nC (typ.) • Low drain-source ON resistance: RDS (ON) = 5.1 mΩ (typ.)

transistor k70

Abstract: marking k70 k70 sot 23 k70 transistor sot 23 K70 2 GATE marking k70 sot23
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage · · · · · · Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50

transistor k70

Abstract: marking k70 sot-23 marking code K70
Contextual Info: BS870 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage · · · · · · Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50