TRANSISTOR K45 Search Results

TRANSISTOR K45 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR K45 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
100-P Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv Contextual Info: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	K456-60A/B BUK456 T0220AB BUK456-60A/B 100-P BUK456-60A BUK456-60B T0220AB dm 369 rv	PDF
BUK455-60A Abstract: K455-60A BUK455-60B diode d2s BUK455 T0220AB k455 Contextual Info: N AMER PHILIPS/DISCRETE LTE D ^53^31 □□3Db4Q TTl HiAPX Product Specification Philips Semiconductors B U K455-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	Q03DLi40 K455-60A/B T0220AB BUK455 BUK455-60A K455-60A BUK455-60B diode d2s T0220AB k455	PDF
Contextual Info: bRE D N AMER P H IL IP S /D IS C R E T E • bbS3R31 0Q3Qb65 D5T « A P X Product Specification Philips Semiconductors B U K456-200A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bbS3R31 0Q3Qb65 K456-200A/B O220AB BUK456 -200A -200B BUK456-200A/B 0030bAA	PDF
BUK453-60A Abstract: BUK453-60B T0220AB k453 K4536 Contextual Info: bTE D N AMER P H I L I P S / D I S C R E T E • b b S 3 T 31 0 G 3 DbDD 20 S Product Specification Philips Semiconductors BU K453-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope.	OCR Scan	bbS3T31 K453-60A/B T0220AB BUK453 -ID/100 BUK453-60A BUK453-60B T0220AB k453 K4536	PDF
BUK455-100A Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK455-100A/B BUK455 -100A -100B T0220AB K455-100A/B BUK455-100A	PDF
BUK455 Abstract: BUK455-200A BUK455-200B T0220AB Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK455-200A/B BUK455 -200A -200B T0220AB T0220AB; T0220 BUK455-200A BUK455-200B T0220AB	PDF
727 Transistor power values Contextual Info: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	K456-1000B T0220AB BUK456-1000B 727 Transistor power values	PDF
BUK456-800A/B Abstract: BUK456 BUK456-800A BUK456-800B T0220AB Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK456-800A/B BUK456 -800A -800B T0220AB T0220AB; T0220 BUK456-800A/B BUK456-800A BUK456-800B T0220AB	PDF
Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK453-100A/B BUK453 -100A -100B T0220AB	PDF
k452 Abstract: transistor k452 K4-521 Contextual Info: Product Specification Philips Sem iconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	K452-1OOA/B BUK452 -100A -100B T0220AB BUK452-100A/B k452 transistor k452 K4-521	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF
Contextual Info: N AMER PHILIPS/DISCRETE bTE D L.b53T31 003Db4S 473 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	b53T31 003Db4S O220AB K455-100A/B BUK455 -100A -100B BUK455-100A/B	PDF
k452 Abstract: BUK452-60A BUK452-60B T0220AB lo25 transistor k452 Contextual Info: N AMER PHILIPS/DISCRETE blE D • ^53^31 □□3GSTÜ Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	K452-60A/B T0220AB BUK452 -ID/100 k452 BUK452-60A BUK452-60B T0220AB lo25 transistor k452	PDF
BUK454-200A-B Abstract: BUK454-200B T0220AB Contextual Info: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION BUK454-200A/B QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope suitable for use in surface mount applications. The device is intended for use in	OCR Scan	BUK454-200A/B T0220AB T0220AB; T0220 BUK454-200A-B BUK454-200B	PDF

Contextual Info: bRE J> N AJ1ER PHILIPS/DISCRETE bbS3T31 DD3DS^S Dlfi * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	bbS3T31 O220AB BUK452-1OOA/B BUK452 -100A -100B BUK452-100A/B	PDF
Contextual Info: N AUER PHILIPS/D ISCR ETE b'tE D bbS3^31 QQ30bRQ 417 * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a lastic envelope. he device is intended for use in	OCR Scan	QQ30bRQ O220AB BUK456-800A/B BUK456 -800A -800B K456-800A bbS3T31 0030b84	PDF
TRANSISTOR b72 Abstract: BUK454-200A BUK454-200B T0220AB Contextual Info: N AUER PHILIPS/DISCRETE b^E D m ^ 5 3 ^ 3 1 GDBDblS 73b • APX Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK454-200A/B T0220AB BUK454 -200A -200B TRANSISTOR b72 BUK454-200A BUK454-200B	PDF
sf 128 transistor Abstract: TRANSISTOR SF 128 Triode 8050 marking P53 transistor SC73P2602 ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47 Contextual Info: PROGRAMMABLE INFRARED REMOTE TRANSMITTER WITH BUILT-IN TRANSISTOR DESCRIPTION SC73P2602 is SC73 core based programmable remote transmitter 4-bit MCU with infrared transmitting transistor and built-in 2K OTP program memory supporting in-system program (ISP) which can optimize the stock control.	Original	SC73P2602 SC73P2602 SC73C16 sf 128 transistor TRANSISTOR SF 128 Triode 8050 marking P53 transistor ic marking k52 SC73P16 bd 8050 TRANSISTOR part MARKING k48 marking k47	PDF
k455 Abstract: BUK455 BUK455-200A BUK455-200B T0220AB Contextual Info: bTE D N AMER PHI LIP S/ DI SC R ET E • 0D30b50 Ô3D H A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	0D30b50 K455-200A/B T0220AB BUK455 -200A -200B -ID/100 k455 BUK455-200A BUK455-200B T0220AB	PDF
BUK457-400A Abstract: BUK457-400B T0220AB Contextual Info: N AMER PHILIPS/D ISCR ETE SSE D • G020S4S T ■ PowerMOS transistor BUK457-400A BUK457-400B r-37-j 3 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	G020S4S BUK457-400A BUK457-400B T-37-13 BUK457 -400A -400B BUK457-400A BUK457-400B T0220AB	PDF
BUK454-600A Abstract: bu 257 BUK454-600B T0220AB Contextual Info: N AMER PHILIPS/DISCRETE 2SE t.bS3*131 Q G 2 Q 4 7 S D 4 PowerMOS transistor BUK454-600A BUK454-600B T -3 7 -/I GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	BUK454-600A BUK454-600B BUK454 -600A -600B bu 257 BUK454-600B T0220AB	PDF
BUK454-600A Abstract: 1-fjv BUK454-600B T0220AB BUK454-600 Contextual Info: N AMER P H ILIP S /D IS C R E TE 2SE J> m t . bS3 * 13 1 QG2047S 4 • PowerMOS transistor BUK454-600A BUK454-600B r - 37-/1 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK454-600A BUK454-600B BUK454 -600A -600B T-39-17 1-fjv T0220AB BUK454-600	PDF
BUK454-500B Abstract: BUK454-500A T0220AB K45450 tb 10 n 6 Contextual Info: bbSBTai QQ2DM7G SSE D N AMER P H I L I P S / D I S C R E T E S BUK454-500A BUK454-500B PowerMOS transistor N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	BUK454-500A BUK454-500B BUK454 -500A -500B T-39-11 T0220AB K45450 tb 10 n 6	PDF
Diode LT 404 Abstract: 100-P BUK456 BUK456-100A BUK456-100B T0220AB Contextual Info: N AMER P H IL IP S /D IS C R E T E h^E T> • bbSBTBl ODBDbûO P h ilip s S e m ico n d u cto rs PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies	OCR Scan	D030bfll BUK456-100A/B T0220AB BUK456 -100A -100B /V-20/ Diode LT 404 100-P BUK456-100A BUK456-100B	PDF

TRANSISTOR K45 Search Results

TRANSISTOR K45 Result Highlights (5)

TRANSISTOR K45 Datasheets Context Search

100-P

BUK455-60A

BUK453-60A

BUK455-100A

BUK455

727 Transistor power values

BUK456-800A/B

k452

sx3704

k452

BUK454-200A-B

TRANSISTOR b72

sf 128 transistor

k455

BUK457-400A

BUK454-600A

BUK454-600A

BUK454-500B

Diode LT 404