TRANSISTOR K3561 Search Results

TRANSISTOR K3561 Result Highlights (5)

Part	Manufacturer	Description	Download
BLA1011-300	Rochester Electronics LLC	BLA1011-300 - 300W LDMOS Avionics Power Transistor	PDF
54F151LM/B	Rochester Electronics LLC	54F151 - Multiplexer, 1-Func, 8 Line Input, TTL	PDF
ICL7667MJA	Rochester Electronics LLC	ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8	PDF
93L422ADM/B	Rochester Electronics LLC	93L422A - 256 x 4 TTL SRAM	PDF
27S185DM/B	Rochester Electronics LLC	27S185 - OTP ROM, 2KX4, 55ns, TTL, CDIP18	PDF

TRANSISTOR K3561 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
K3561 Abstract: transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.)	Original	2SK3561 K3561 transistor k3561 2SK3561 2SK3561 equivalent k3561 Silicon N Channel MOS Type k3561 transistor 2sk3561 datasheet	PDF
K3561 Abstract: transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75 Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5 S (typ.)	Original	2SK3561 K3561 transistor compatible k3561 transistor k3561 k3561 transistor 2SK3561 equivalent k356 2SK3561 k3561 Silicon N Channel MOS Type k3561 transistor application	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356 Contextual Info: TENTATIVE 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSⅥ 2SK3561 unit：ｍｍ Switching Regulator Applications 10±0.3 Symbol Rating Unit Drain-source voltage VDSS 500 V Drain-gate voltage (RGS = 20 kΩ) VDGR 500 V Gate-source voltage	Original	2SK3561 K3561 transistor k3561 k3561 transistor k3561 Silicon N Channel MOS Type 2SK3561 equivalent 2SK3561 2sk3561 datasheet K356	PDF
Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561	PDF
K3561 Abstract: transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 2sk3561 2SK3561 equivalent 40VDS k3561 transistor k3561 Silicon N Channel MOS Type	PDF
K3561 Abstract: transistor k3561 k3561 transistor k3561 transistor application 2sk3561 Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 k3561 transistor k3561 transistor application 2sk3561	PDF
K3561 Abstract: transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561 Contextual Info: 2SK3561 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π-MOSVI 2SK3561 Switching Regulator Applications • • • • Unit: mm Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.) High forward transfer admittance: \|Yfs\| = 6.5S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V)	Original	2SK3561 K3561 transistor k3561 2SK3561 k3561 transistor k356 k3561 transistor application K3561 data transistor 2sK3561	PDF