TRANSISTOR K2718 Search Results

TRANSISTOR K2718 Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
2SC6026MFV		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR K2718 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor k2718 Abstract: K2718 transistor 2sk2718 2SK2718 2SK271 Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK2718 transistor k2718 K2718 transistor 2sk2718 2SK2718 2SK271	PDF
k2718 Abstract: transistor k2718 2SK2718 634 transistor Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK2718 k2718 transistor k2718 2SK2718 634 transistor	PDF
k2718 Abstract: transistor k2718 Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) z High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK2718 k2718 transistor k2718	PDF
k2718 Abstract: transistor k2718 transistor 2sk2718 2sk2718 Contextual Info: 2SK2718 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2718 DC−DC Converter and Motor Drive Applications Unit: mm Low drain−source ON resistance : RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance : \|Yfs\| = 2.0 S (typ.)	Original	2SK2718 k2718 transistor k2718 transistor 2sk2718 2sk2718	PDF
2SK2718 Abstract: 634 transistor Contextual Info: TO SH IBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Source UN Resistance : Rd S(ON) = 5.612 (Typ.)	OCR Scan	2SK2718 2SK2718 634 transistor	PDF
SS100 TRANSISTOR Abstract: 2SK2718 Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance : R ßS (0 N )“ 5 .6 0 (Typ.)	OCR Scan	2SK2718 SS-100/ SS100 TRANSISTOR 2SK2718	PDF
k2718 Abstract: transistor k2718 Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U ST R IA L A PPLIC A T IO N S DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS • Low Drain-Source ON Resistance	OCR Scan	2SK2718 k2718 transistor k2718	PDF
Contextual Info: 2SK2718 TO SH IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS 1 0 Í0 .3 : R d S ( 0N) = 5-6H (Typ.)	OCR Scan	2SK2718 100//A 20kil)	PDF
2SK2718 Abstract: transistor 2sk2718 Contextual Info: TOSHIBA 2SK2718 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSIII 2SK2718 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm • High Forward Transfer Admittance : \|Yfs\| = 2.0S (Typ.) • Low Leakage C urrent : lD gg = 100,6iA(Max.) (V]3 g = 720V)	OCR Scan	2SK2718 100//A 2SK2718 transistor 2sk2718	PDF