TRANSISTOR K 620 Search Results

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

BLV194

Contextual Info: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

Contextual Info: m 2N6213 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6213 is Designed for General Purpose High Voltage Amplifier and Switching Applications. MAXIMUM RATINGS lc INCHES A 6 C D E F G H J K L M -350 V ce 35 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C

2N6211

Abstract: te 2443
Contextual Info: 2N6211 SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. 2.0 A VcB 275 V 225 V o m Ic V MAXIMUM RATINGS PACKAGE STYLE TO- 66 INCHES A B C D £ f G H J K L M 35 W @ Te # 25 0C P d is s Tj

Contextual Info: m 2N6211 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6211 is Designed for Medium Power Amplifier and Switching Applications. MAXIMUM RATINGS V PACKAGE STYLE T O - 66 2.0 A lc 275 V cb IN C H E S A 6 C D E F G H J K L M O m < 225 V 35 W @ Tc = 25 °C

BUK573

Abstract: BUK573-100A BUK573-100B
Contextual Info: Philips C om ponents Data sheet status P re lim in a ry s p e c ific a tio n date of issue March 1991 R e p la c e s B U K 5 4 3 -1 0 0 A /B PHILIPS BUK573-100A/B PowerMOS transistor Logic level FET INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode

uln20658

Abstract: 2065B 2064B 2065 TI ULN20648 TD62064AP ULN2064 ULN-2064B ULN2065B ULN-2065B
Contextual Info: Quad Darlington Transistor A rra y ULN 2064B&#39; - 61 - - U LN 2 0 6 5 B , TD 6 2 0 6 4 A P js a ft & 1j [È] MIN T" — 9 T Y P MAX m fit 2064B 35 V 2065B 50 V tt £ n V f K FC I f = 1 .0 A 1.75 V NS I f —1.5A 2 .0 V MOT g,;g tpd «F Pd U LN 2064 TI V rik)

acs sot-343

Abstract: spice germanium diode RF POWER TRANSISTOR NPN 3GHz marking BFP 620 sot-343 VPS0560
Contextual Info: BFP 620 NPN Silicon Germanium RF Transistor 3 • High gain low noise RF transistor 4 • Provides outstanding performance for a wide range of wireless applications • Ideal for CDMA and WLAN applications • Outstanding noise figure F = 0.65 dB at 1.8 GHz

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC14538B Dual Precision Retriggerable/Resettable L SUFFIX CERAMIC CASE 620 Monostable Multivibrator The MC14538B is a dual, retriggerable, resettable monostable multivibrator. It may be triggered from either edge of an input pulse, and produces an

C02S

Abstract: Co750
Contextual Info: SIEMENS FEATURES SFH 620 5.3 kV TRIOS OPTOCOUPLER AC VOLTAGE INPÜT Package Dimensions in Inches mm * High Current Transfer Ratios at 10 mA: 40-320% at 1 mA: 45% typical (>13) * Low CTR Degradation . 307 (7 8>_ .291 (7 4) .255 (6 5 )_ '2 4 8 ( 6 .3 ) * Good CTR Linearity Depending on Forward

SFH6112

Abstract: Siemens optocoupler sfh610 SFH610 Siemens optocoupler sfh610A SFH611A-4 SFH6186T-3 Siemens sfh615 optocoupler SFH611-3 SFH611A-3 sfh610 equivalent
Contextual Info: SFH6106T SFH6116T SFH6156T SFH6186T SFH6206T SFH6286T SIEM EN S 5883 5.3 kV TRIOS HIGH RELIABILITY OPTOCOUPLERS FEATURES • SMD Versions of SFH610, 611,615,618, 620,628 • Available on Tape and Reel Suffix T • TRIOS — tansparent lOn Shield Package Dimensions in Inches (mm)

Contextual Info: DF N2 020 -6 PBSS5230PAP 30 V, 2 A PNP/PNP low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description PNP/PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

Contextual Info: DF N2 020 -6 PBSS4130PAN 30 V, 1 A NPN/NPN low VCEsat BISS transistor 11 January 2013 Product data sheet 1. General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.

62003F

Abstract: 62004f 62004A TD62801P 62004AP A 107 transistor TD62XXX 62c852
Contextual Info: [ 2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays [2 ] PRODUCT LINEUP 1. Bipolar Transistor Arrays B i p o l a r |Tra n s i st o r| TD62 xxx rray| 40Series, 226Devices P TTL O UTPUT Sustaining Voltage (V ç e (su s ) P/PA /F/FB/FN A P/APA /A F/AFN : B P/B P- I/B F

1035 transistor

Contextual Info: CONFIDENTIAL Revision: C Prepared by S.Iura Date I.Umezaki 5-Sep.-2011 MITSUBISHI HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor MODULES HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY NOT TO BE REPRODUCED OR DISCLOSED WITHOUT SPECIFIC

Contextual Info: ASSP SWITCHING REGULATOR CONTROLLER MB3769A • DESCRIPTION The Fujitsu MB3769A is a pulse-width-modulation controller which is applied to fixed frequency pulse modulation technique. The MB3769A contains wide band width Op-Amp and high speed comparator to construct very high speed switch­

SE012

Abstract: MC 31136 transistor wih code L0A capacitor seramic LO2 W AW counter KF-38E KYOCERA saa 1030 2068N transistor KD 503 LC5876
Contextual Info: Ordering num ber:EN 3956C C M O S LSI No. 3956C LC5872, LC5873, LC5874, LC5876 SANYO i 4-bit Single-chip Microcontrollers with LCD driver, 12KB/8KB/6KB/4KB ROM, 1Bk RAM on chip X. / // Overview X -j-.r Features The LC5872, LC5873, LC5874 and LC5876 are 4-bit

2N3568

Abstract: optocoupler pnp 2N3638 transistor Motorola transistors MJE3055 K39 2 GATE optocoupler NPN optocoupler pnp or npn 2N3638 k 2750 transistor TRANSISTOR FOR LED 6 VOLT
Contextual Info: Driving High-Level Loads With Optocouplers Appnote 4 Frequently a load to be driven by an optocoupler requires more current, voltage, or both, than an optocoupler can provide at its output. Figure 1. NPN driver VCC Available optocoupler output current is found by multiplying

MB3759

Abstract: MB3759 datasheet MB3759P 2SC3058A MB3759 pwm 16p dip DS04-27200-7E MB3759 control ct FPT-16P-M06 MB3759PF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27200-7E ASSP For Power Management Applications Switching Regulator Controller Switchable between push-pull and single-end functions MB3759 • DESCRIPTION The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.

MB3759 control ct

Abstract: MB3759 MB3759 datasheet MB3759C MB3759P MB3759 pwm 16p dip data sheet chopper transformer 2SC3058A FPT-16P-M06 MB3759PF
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27200-6E ASSP For Power Management Applications BIPOLAR Switching Regulator Controller Switchable between push-pull and single-end functions MB3759 • DESCRIPTION The MB3759 is a control IC for constant-frequency pulse width modulated switching regulators.

FZ1200R12KE3

Contextual Info: Technische Information / technical information IGBT-Module IGBT-Modules FZ1200R12KE3 vorläufige Daten preliminary data Höchstzulässige Werte / maximum rated values Elektrische Eigenschaften / electrical properties Kollektor Emitter Sperrspannung collector emitter voltage

T0258HF65G

Contextual Info: Date:- 27 Jan, 2014 Data Sheet Issue:- A1 Advance Data Insulated Gate Bi-Polar Transistor Type T0258HF65G Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 6500 V VCES Collector – emitter voltage Tj 25°C

BSM600GA120DLC

Abstract: BSM600GA120DLCS
Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM600GA120DLC S Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom

T1200TB

Abstract: transistor 7830 diode current 1200A
Contextual Info: WESTCODE An Date:- 12 Jan, 2011 Data Sheet Issue:- P1 IXYS Company Prospective Data Insulated Gate Bi-Polar Transistor Type T1200TB25A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 2500 V VDC link Permanent DC voltage for 100 FIT failure rate.