TRANSISTOR K 620 Search Results

2N3741

Contextual Info: 2N3741 SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -80 V 25 W @ Te $ 25 °C

transistor te 2443

Abstract: 2N3740A
Contextual Info: 2N3740A SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3740A is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO-66 MAXIMUM RATINGS A B C D £ f G H J K L M 4.0 A Ie o m < -60 V 25 W @ Te $ 25 0C

AX620

Abstract: gee transistor RAo sot-23 SC06960
Contextual Info: rz z s c s -m 0 M S0 N mrJM K O D raO H LIC TlO R lD ISS BFS19 SMALL SIGNAL NPN TRANSISTOR Type Marking BFS19 F2 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . RF APPLICATION UP T 0 100 MHz

2N3054A

Contextual Info: 2N3054A SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N 3054A is a Medium Power Transistor for General Purpose Switching and Amplifier Applications MAXIMUM RATINGS 4.0 A 10 A PEAK lc INCHES A B C D £ f G H J K L M 55 V o m < PACKAGE STYLE TO - 66 Pd is s

1.4464

Abstract: NEC 3358 transistor Mu 61344 nec 8339 transistor Mu s12 nec k 4145 nec transistor k 4145 84147 ha 13473
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER The 2SC5289 is ideal for the final stage amplifier in 1.9G Hz-band digital PA C K A G E D R AW IN G cordless phones DECT, PHS, etc. . (Unit: mm) FEA TU R E S

ts 635 m

Abstract: 2N6233
Contextual Info: 2N6233 SILICON NPN POWER TRANSISTOR DESCRIPTION: The 2N6233 is Designed for General Purpose High Voltage Amplifier and Switching Applications. PACKAGE STYLE TO - 66 MAXIMUM RATINGS 5.0 A lc 10 A P E A K INCHES A B C D £ f G H J K L M o m < 225 V Pd is s

Contextual Info: m 2N3741 \ \ SILICON PNP MEDIUM POWER TRANSISTOR DESCRIPTION: The 2N3741 is a Medium Power Transistor for General Purpose Amplifier and Switching Applications. PACKAGE STYLE T O -66 MAXIMUM RATINGS INCHES A 6 C D E F G H J K L M 4.0 A lc O m < -80 V 25 W @ Tc = 25 °C

te 2443 MOTOROLA transistor

Abstract: 2443 MOTOROLA transistor 2N5344 transistor te 2443 EISA sc 107 transistor 80373 K/te 2443 MOTOROLA transistor
Contextual Info: TTü T O K O L A XL 6367254 iX^IK^/K ’TE r> MOTOROLA SÇ_ X S T R S / R F bdb i’eii 4 uuaudr’u □ 96 D 80370 . D MOTOROLA SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE POWER PNP SILICON TRANSISTOR 1 AMPERE . . . designed for high-voltage switching and amplifier applications.

6DI75MA-050

Abstract: 2DI100MA-050 1di50 1di200 6DI30MA-050 TRANSISTOR N 1380 600 300 SC 2di150ma-050
Contextual Info: /\°7 —7"VW 7 / Power Devices k • A 7 ~ h 7 > y X ^ i v i t — V Power Transistor Modules 600V'7^X ¡ lh F E / \ V - l'7 > v ; ^ iv . a - J l' 600 volts class high hFE power transistor modules m a Devi«» type VCBQ VCEQ Ic Cont, Amps. Pc hnsowisfc).

toshiba l40

Abstract: 2SA1620 2SC4209 A1620
Contextual Info: 2SA1620 TO SH IBA 2 S A 1 620 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY AMPLIFIER APPLICATIONS • + 0.5 2 .5 -0 .3 Complementary to 2SC4209 + 0.25 k 1-5 - ° - 15>i I- MAXIMUM RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

til 31a

Abstract: bt 13b IRGPC40S RA-10n
Contextual Info: International K>RjRectifier IRGPC40S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed 1GBT PD - 9.692A Features • Switching-loss rating includes all “tail" losses • Optimized for line frequency operation to 400Hz See Rg. 1 for Current vs. Frequency curve

MP1620

Abstract: transistors MP1620 Mp1620 equivalent mp1620 transistor transistor mp1620 sanken power transistor mp1620 sanken power transistor IC MP1620 1F 10pin sanken lot number
Contextual Info: nnKpn M nàtfcJÜ # £ s a n k e n e l e c t r ic c o m p a n y , l t d . SPE C IFIC A TIO N S DEVICE TYPE NAME m m i M P I620 SANKEN MOLD TYPE SILICON POWER TRANSISTOR MPI 620 l. m m m m Scope C \7 {2> JSTOiilLSS S' y a M P1620 Ko 50 The present specifications shall apply to Sanken silicon power transistor type MP1620.

T4A 250V

Abstract: D67FP5 d67fp6 D67FP D67FP7
Contextual Info: 7294621 POWEREX « M E R INC E "ifl ~ 3 3 -3 & TS'iMt.Hl DDDEITS h D67FP X Powerex, Inc., Hlllls Street, Youngwood, Pennsylvania 15697 412 925-7272 . i'.-' Fast Switching Single Darlington Transistor Module . V.Í: ; , V.V i k .-.c-.,V .- 100 Amperes 500-600-700 Volts

2SK1641

Contextual Info: TO SHIBA 2SK1641 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 641 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9 M A X.

BLV194

Contextual Info: 7110ô2fci DDb313û TTT « P H I N bSE D PHILIPS INTERNATIONAL UHF power transistor Product specification Philips Semiconductors BLV194 Q U IC K REFERENCE DATA RF performance at T h = 25 °C in a common emitter test circuit. FEATURES • Emitter-ballasting resistors for an

BUK7509

Abstract: BUK7609-75A
Contextual Info: D2 PA K BUK7609-75A N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

BUK95

Abstract: BUK9504-40A BUK9604-40A 03nd97 M3004
Contextual Info: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK7609-75A N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

Contextual Info: D2 PA K BUK9604-40A N-channel TrenchMOS logic level FET Rev. 2 — 7 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor FET in a plastic package using TrenchMOS technology. This product has been designed and qualified to

SST222A

Abstract: MMST2222A PN2222A SST6838 SST6839 T116
Contextual Info: Transistors SST6838 NPN General Purpose Transistor SST6838 • E x t e r n a l d im e n s io n s U n its : m m • F e a tu re s 1 ) BVceo minimum is 40V (lc = 1 m A ) 2 ) Complements the SST6839. SST6838 ,1.9±0.2 10.950.95 • P a c k ag e , m a rk in g , and p a c k a g in g s p e c ific a tio n s

2SK2412

Abstract: 3R-90 TC-8031 2sk2412k
Contextual Info: J_ I C • E * 1K N MOSïï^l^ejÏJ^MOS FET MOS Field Effect Transistor ^ 2 S K 2 4 1 2 -V ¿¡WU/\0|7 -MOSFET 'f y 3- X C? Æ I > I l f f l 2 S K 2 4 1 2 liN 5 :- ^ t O H É a / \ “ 7 - M 0 S F E T T ', X < y •^■•fe : m m 10.0 m + 0.3 4.5 ± 0.2

AT-38043

Contextual Info: What HEW LETT* mLliM P A C K A R D NPN Silicon Bipolar Common Emitter Transistor Technical Data AT-38043 Features • Operates Over a Wide Range of Voltages and Frequencies • +25.0 dBm P| d[5 and 60% Collector Efficiency @ 900 MHz, 4.8 Volts, Typ. • 15 dB GldB @ 900 MHz,

transistor rf type M 2530

Abstract: signal path designer INA02170
Contextual Info: f T J I H EW LETT 1WM P A C K A R D INA Series RFIC Amplifiers Application Note S012 Introduction The INA series amplifiers are part of Hewlett-Packard’s product line of silicon bipolar RF Integrated Circuits built with HP’s ISOlated Self Aligned Transistor ISOSAT process.

Contextual Info: m 2N6213 \ \ SILICON PNP POWER TRANSISTOR DESCRIPTION: The 2N6213 is Designed for General Purpose High Voltage Amplifier and Switching Applications. MAXIMUM RATINGS lc INCHES A 6 C D E F G H J K L M -350 V ce 35 W @ Tc = 25 °C P diss Tj -65 °C to +200 °C