TRANSISTOR K 538 Search Results

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

j1n transistor

Abstract: BTP 30 diode B199 BTP DIODE TRANSISTOR 3FT 81
Contextual Info: 1DI5OH-O55 50a /< 7 - / \ 7 — )\ s POWER TRANSISTOR MODULE ^Features • ¡SiiJŒ High Voltage • V ' s W f â —Kl*3/K • A S O A 'T k v ,' Including Free W heeling Diode Excellent Safe Operating Area Insulated Type l.fflJÊ - Applications Chopper Controls

IAEJE

Abstract: 6di30z
Contextual Info: 6DI30Z-120 30A / <7 - & D . — JU outi ine Drawings • POWER TRANSISTOR MODULE H _ 14 «Q 1 4 .4 4 . -, y : F e a tu re s • ?Ü i/± • 7')- O J j •üIeü High Voltage yy 4 * - sjw u > • A S O A 'lix L ' k % M k, i k iK J ■ «jt Including Free W heeling Diode

TRANSISTOR BJ 033

Abstract: 2SB1068 JAN 5751 m5ss
Contextual Info: SEC j ^ fx / \ Y 7 Silicon T ran sistor A 2SB1068 PN P Silicon Epitaxial Transistor Audio Frequency Amplifier ¡^ S / F E A T U R E S K W m /P A C K A G E DIMENSIONS oî&‘W.i±-kWiM.WM<n^— ÿ — V ÿ 4 ^ ' í r f f l í L T v", K F '^ O 'f , Unit : mm

KJL5164K-F1

Abstract: NJL5162K NJL5162K-F3 NJLS162K-F2 automatic light using 68K
Contextual Info: NJL5162K 64K 66K B8K PHOTO REFLECTOR • GENERAL DESCRIPTION The N JL 5 1 6 2 K /5 1 6 4 K /5 1 6 6 K /5 I6 8 K . are su p er m in iatu re a n d super thin p h o to reflector; w hich consist o f h ig h o u tp u t infrared em itting a n d high sensitve Si p h o to d ralin g to n transistor.

DIODE B36

Abstract: ml25 M104 T151 ETN85-O5O Transistor B36
Contextual Info: ETN85-O5O 300a POWER TRANSISTOR MODULE • f ô f t ^ Featurés • 7 'J — 'J K rt/K Including Free Wheeling Diode • ASO ti'l a ^ v Excellent Safe Operating Area •m m Insulated Type ■ ffliÊ : A p p lic a tio n s " jT • High Power Switching • AC ^ —

M104

Abstract: T151 X390
Contextual Info: ETN85-O5O 300a 3 . — : Outline Drawings ) V POWER TRANSISTOR MODULE : Featurés • 7 'J — 'J K f*3/K • ASO Including Free Wheeling Diode Excellent Safe Operating Area •mm Insulated Type • ff liÊ ! A p p lic a tio n s v T 's ? • • AC High Power Switching

2DI5OZ-12O

Abstract: B381 IB07
Contextual Info: 2DI5OZ-12O 50A l— ; u POWER TRANSISTOR MODULE : Features > K 9 ftE H ig h V o lt a g e * 7 >; — U — KF*3/K Including Free W heeling Diode * A S O * s'/ a ^ v Excellent Safe Operating Area Insulated Type I Applications • Jz'K 'tJX 'f "jJ- 's y High Power Switching

JE 800 transistor

Abstract: UPA76ha upa76 PA76HA KJE transistor pa76h JE 33 KJE 17 transistor B0188 361-s
Contextual Info: NEC W T / \ M À f 7 'S ' h =7 Com pound Transistor ¿¿PA76HA t: ^ n p n x >; □ h^ * N PN Silicon Epitaxial Compound Transistor Differentia! Amplifier ^ f^ H l/PA C K A G E DIMENSIONS if t * / F E A T U R E S O l c h i p m iÊT ibètztb , -< 714 / V b e = 2 m V T Y P . )

CM603

Contextual Info: 6DI3OA-O5O 30a Ä ± / < 7 — Ì V ; Outline Drawings , < n - \ = 7 > V 'T s ^ i> z l - ; u POWER TRANSISTOR MODULE (10), H.& j I9.5~ . H .5 . 1|,& . (1p}| F e a tu re s • 7 '} — X ' f <J ' s '? $ 4 + — K r t/K • liF E ^ 'iS i.' • S6i&Jfi In c lu d in g 'F re e W h e e lin g D iode

1DI300M-120

Abstract: T151 T810 b336
Contextual Info: DI300M-120 /< 7_ =l - \ s y : Outline Drawings 10 13 21 r r T POWER TRANSISTOR MODULE * Features • High Arm Short Circuit Capability • hFE^Biv,' • 7 l) — High DC Current Gain U > ? ? ' % ' — K rtJR • IfeiiiJK Including Freew h eelin g Diode

2SA1396

Abstract: 2SC3568 T108 TS33
Contextual Info: NEC j m = f T / x r x Silicon Power Transistor A 2SA1396 P N P i t: ^ * '> 7 7Vl'7ï2'> V □ > h =7 > i> 7* 9 x if f l PNP Silicon Epitaxial Transistor High Speed, High Voltage Switching Industrial Use 2 S A 1 3 9 6 i* iâ ^ * It Œ X ^ t L X W W fê H / P A C K A G E DIMENSIONS

IC M605

Abstract: diode B410 M605 6DI15A-120 30S3 T810 Transistor AC 125
Contextual Info: 6DI15A-12005A g ± / < 7 — )V I Outline Drawings POWER TRANSISTOR MODULE : Features • ffiflötEE High Voltage • 7 ij- * 4 •; K rt* Including Free Wheeling Diode ■ Insulated Type — Ty ^-^ Ç ■ 7t7.\'s9? *»250/ '■7T*.h'sf7 'H NttllD allOX 11- " T -—

b342 transistor

Abstract: 25t125 TRANSISTOR BO 344 B344 B341 1B2 zener diode B-343 B343 TG-400 B342
Contextual Info: 1 D I 3 0 0 M P - 1 2 0 3 0 0 A / N °7 “ •Outline Drawings h POWER TRANSISTOR MODULE : Features • High DC Current Gain • K r tlE • ffittflMftttERTflE ■ffljSs : Applications • General Purpose Inverter > '< — 9 • ( Uninterruptible Power Supply

1DI300ZN-1

Abstract: JE711 JE71 B348 zener ci 5t
Contextual Info: 1DI300ZN-120 300A ✓ < 7 - : Outline Drawings 7 h POWER TRANSISTOR MODULE : Features • hpE^'fiH-' High DC Current Gain • f * - K rt* • a e ^ O T ia ^ t - t : Applications • i/ L ffl'f V’-'i— 9 General Purpose Inverter • Uninterruptible Power Supply

transistor f151

Contextual Info: 6DI15A-05005A / < T7 — ' Ì k ± s \ r7 — ;E ' > i L — J l' : Outline Drawings =l — ) V POWER TRANSISTOR MODULE 17 7.6 T 7 7I 7I7 JA B 3.E A 3.E |3& [3.Ç • iN N i: : F e a tu re s • y U — i ï ' f 'J + — K rtJ E In c lu d in g Free W h e e lin g D iode

ETL81-050

Abstract: SMT M4 diode M103 T151
Contextual Info: ETL81-050000A : Outline Drawings )V s < r7 - POWER TRANSISTOR MODULE Features • 7 1 ; —ip. 4 1; 's * f $ 4 • ASO — K r t/ tt Including Free W heeling Diode Excellent Safe Operating Area • Insulated Type : Applications • 7. <i "j T V ? Power S w itching

b72 zener

Abstract: ZENER MIO N41I 30S3 M115 T151
Contextual Info: 1DI400MN-050 400A e±,(„ 5l-, '•Outline Drawings POWER TRANSISTOR MODULE ■ S J I : Features • hFE^'^V' High DC Current Gain • K rtJ •zm nm m t \ : Applications >'<— 9 • d General Purpose Inverter • Uninterruptible Power Supply • N C If P i& M

A31L

Contextual Info: D 1 I O 2 O Z - 1 C 2 N 2 A : Outline Drawings POWER TRANSISTOR MODULE • 4t;Bb : Features • SffiME • 7 High Voltage y -¡m g K rt* • ASO A'TSv.' •mm Including Free W heeling Diode Excellent Safe Operating Area Insulated Type : Applications •

1d1200z

Abstract: transistor eft 323 FCLA M115 T151 1d1200 characteristics of zener diode TRANSISTOR WM 9
Contextual Info: 1 D 1 '< 7 - 2 Z N - 1 2 2 A : Outline Drawings l ' 7 / ' ÿ 7 Î ï ÿ i - ; i ' POWER TRANSISTOR MODULE : Features • h F E ^ i^ i' High DC Current Gain • K rt» : Applications • General Purpose Inyerter > '< — 9 • Uninterruptible Power Supply

EVM31-050A

Abstract: ae9t b49 diode M203 P151 T151 JU 0003 EVM31-050 JT diode
Contextual Info: EVM31-050A 150A : Outline Drawings POWER TRANSISTOR MODULE • i t s : Features ij —7^4 07 K ftj • h jF E ^fti.' •m m Including Free Wheeling Diode' High DC Current Gain Insulated Type : Applications >9 Power Switching • A C i- ^ W AC M otor Controls

IGBT 1MBH60-100

Abstract: 1MBH60-100 t930 T151 T460
Contextual Info: 1 M B H 6 - 1 ^zblGBT IGBT INSULATED GATE BIPOLAR TRANSISTOR • W K '+ i i : Outline Drawings : Features • High Speed Switching Low Saturation Voltage • M A lJ 'f —H£i/t MOS'ir“ M?|is High Impedance Gate Small Package : Applications • flIG i& iS M tliS

Contextual Info: 2N6290 2N6290 NPN PLASTIC POWER TRANSISTOR Complementary 2N6109 Medium Power Switching and Linear Applications DIM A B C D E F G H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3,75 3,88 2,29 2.79 2,54 3,43 0,56 12,70 14,73 6,35 2,03 2.92 31.24 7 DEG 14.42

151S5

Abstract: I51i 2DI75D-050A
Contextual Info: 2DI75D-050A 75a POWER TRANSISTOR MODULE : Features • 7 y — = f— K rtM • hFEA^Bv.' • *1 1 » Including Free Wheeling Diode High DC Current Gain Insulated Type : Applications "j + 's? • High Power Switching • AC ^ —9 MW A C M otor Controls • DC i — 9WM