TRANSISTOR K 425 Search Results

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

Contextual Info: K SR 2013 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • Switching circuit, Inverter, Interface circuit, Driver Circuit • Built in bias Resistor (R1«2.2ka, R2»47kQ) • Complement to KSR1013 ABSOLUTE MAXIMUM RATINGS (TA> 25<C )

2N4428

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 1 2N4428 *a A 4>b «bi 4>0 »Dt h 1 k 1 I, 1: P Q MAXIMUM RATINGS 425mA Ic VCE 30V

sot 86 marking CODE e3

Contextual Info: f ï ^ l HEW LETT WFnÆP A C K A R D Low Current, High Performance NPN Silicon Bipolar Transistor Technical Data AT-30511 AT-30533 Features Description • High Perform ance Bipolar T ransistor Optim ized for Low Current, Low Voltage O peration • 900 MHz Performance:

AUR500

Abstract: ASI10550
Contextual Info: AUR500 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 500 is Designed for UHF Radar and Pulsed signal apps PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J

RT1P141C

Abstract: 6j1 06 RT1N141X RT1P141M RT1P141U RT1P141X RT1P141
Contextual Info: RT1 P I 4 1 X SERIES J T sistor> For Switching Application Silicon PNP Epitaxial Type DESCRIPTION OUTLINE RT1P141X is a on* chip transistor with built-in bias resistor.NPN type is RT1N141X DRAWING RT1P141U U N IT m m RT1P141C FEATURE -Built-in bias resistor [R1 = 10kQ R2 = l0 k ft .

ASI10549

Abstract: AUR300
Contextual Info: AUR300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The AUR 300 is Designed for PACKAGE STYLE .400 BAL FLG A A B FEATURES: FULL R 4X.060 R • Input Matching Network • • Omnigold Metalization System C E P D F H K J G I N MAXIMUM RATINGS L M 21.6 A

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

2N7091

Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

ASI10686

Abstract: 4X06
Contextual Info: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 21.6 A IC 65 V VCBO 65 V

K1167

Abstract: ASI10687 transistor A 584
Contextual Info: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 43.2 A IC 65 V VCBO 65 V

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

2SD773

Abstract: transistor 2sD773 2SB733 2SD773, transistor
Contextual Info: NEC NPN SILICON TRANSISTOR 2SD773 D E S C R IP T IO N The 2 S D 7 7 3 is designed for use in driver and output stages of audio frequency amplifiers. P A C K A G E D IM E N S IO N S in millimeters inches FEATURES • High Total Power Dissipation P j • High D C Current Gain

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

Contextual Info: Circuit Board Thermocouple Connectors Shown 2x Actual Size Miniature Standard and Miniature Sizes; Type PCC GlassFilled Nylon 220oC 425oF Standard MADE IN USA ߜ For OEM Uses ߜ Attaches Directly to Circuit Board ߜ Perfect for Handheld Thermometers ߜ J, K, T and E

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

m28 transistor

Abstract: 2SC2340 NE56900 NE56953E NE56954 NE56987 S21E
Contextual Info: N E C / .CALIFORNIA 1SE D N E ' H b427414 DQ01331 3 NE56900 NE56953E NE56954 NE56987 NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • A M P L IF IE R P E R F O R M A N C E : 550 mW with 11.5 d B Gain at 2 GHz 425 mW with 7.5 d B Gain at 4 G H z

SOT103

Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425
Contextual Info: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures

Helipot

Abstract: JAN2N5431 MIL-STD-750-Test capacitor ttc 342 J3 DIODE ST JANTX2N5431 20.000H unijunction application note
Contextual Info: MIL-S-19500/425 USAF 23 Sept 1969 V Mil S Sii CONDUCTOR DEVICE- TRANSISTOR. PN. SILICON. UNIJUNCTION JAN2N5431, and JANTX2N5431 1. SCOPE Scope. - This speciflcation covers the detail requirements for a PN, silicon, unijunction transistor. The prefis "TX” is used

2N4256

Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

0.2MF CAPACITOR

Abstract: TIL111 equivalent til111 DI-425
Contextual Info: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec­

2N5305

Abstract: 2N5356 BC pnp 200mA npn 940 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

Transistor TT 2246

Abstract: single-supply wein bridge oscillator picoammeter schematic diagram TT 2246 transistor CA5160AE staircase generator CA5160 Wien Bridge Oscillator opamp CA5160E CA5160M
Contextual Info: HARRIS SEMICOND SECTOR blE ]> • 4302271 004b407 425 H H A S Cm HARRIS U U CA5160 S E M IC O N D U C T O R BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stag* • Vary High Zj; 1-5Tfl 1 J x 1012Q Typ.