TRANSISTOR K 425 Search Results

2N4428

Contextual Info: , Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. NPN SILICON HIGH FREQUENCY TRANSISTOR PACKAGE STYLE TO-39 1 2N4428 *a A 4>b «bi 4>0 »Dt h 1 k 1 I, 1: P Q MAXIMUM RATINGS 425mA Ic VCE 30V

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

2N7091

Contextual Info: ITSiicanix 2N7091 in c o r p o r a te d P-Channel Enhancement Mode Transistor TO-257AB Hermetic Package TOP VIEW o PRODUCT SUMMARY -10 0 •d k k.O V BR DSS (A) 0.20 -1 4 1 GATE 2 DRAIN 3 SOURCE Case Isolated 1 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)1

Contextual Info: ta n a a i DDi7 ¿ m DOT MITSUBISHI SEMICONDUCTOR <GaAs FET> • M G F4910E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to K band amplifiers. The hermetically sealed metal-ceramic

ASI10686

Abstract: 4X06
Contextual Info: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 21.6 A IC 65 V VCBO 65 V

K1167

Abstract: ASI10687 transistor A 584
Contextual Info: NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG A The is Designed for A B FULL R 4X.060 R FEATURES: C E P D • Input Matching Network • • Omnigold Metalization System F H K J G I N L M MAXIMUM RATINGS 43.2 A IC 65 V VCBO 65 V

Contextual Info: t • S Ss— NEC h MOS M O S Field Effect P o w e r Transistor 2SK1123 1 — MOS FET N T .m m 2SK1123 ü , N tj iz i ^ MOS F E T T", 5 V i T ^ IC <Dtfi W M m w w n n t t m ì È . K j ~y^-> y ^ T t o y fy m Z fr'fS<, K, A mm; X ^ 3 .2 ± 0.2 < y ^> 7 W ÌÌ> ià tlT ^ 'Ò f2 tÒ ,

transistor tt 2222

Abstract: TT 2222 C9011 sot289 TT 2222 npn TZ77 transistor scans sheet high power npn UHF transistor BLV58 IJBA970
Contextual Info: Philips Semiconductors • 7 1 1 0 6 2b P O b ER b l bME ■ P HIN ^^Productspecifica«^ UHF linear push-pull power _ transistor ph ilips international FEA TU RES • High power gain d Q U IC K R E F E R E N C E DATA R F performance at T h = 25 CC in a common emitter test circuit.

Contextual Info: p CENTRAL SEMICONDUCTOR 5<Tw£T»í:¿° gc?K?te^!íEeííi5ee@p e@s2p . CEN-A44 CEN-A45 CEN-A45A NPN SILICON TRANSISTOR ' H I G H VOLTAGE General § @ in ig © ii^ y g f@ r € rp » JEDEC TO-92 CASE EBC 145 Adams Avenue Hauppauge, New York 1 1 7 8 8

Contextual Info: Circuit Board Thermocouple Connectors Shown 2x Actual Size Miniature Standard and Miniature Sizes; Type PCC GlassFilled Nylon 220oC 425oF Standard MADE IN USA ߜ For OEM Uses ߜ Attaches Directly to Circuit Board ߜ Perfect for Handheld Thermometers ߜ J, K, T and E

transistor T K 2056

Abstract: K 2056 transistor transistor K 2056
Contextual Info: SANYO SEMICONDUCTOR 12E CORP D | 7 T ci 7 D 7 t 1 0 0 0 S S 0 0 g 32S C 4256 SS2SC4271 Silicon Transistor Silicon Transistor ' High Voltage Switching Applications Very High-Oefinrtion CR T Display Applications JEDEC: T 022 0 package JEDEC: T0126 package High breakdown voltage

SOT103

Abstract: BFR591 transistor SOT103 transistor 1038 SOT-103 BFR59 NPN planar RF transistor transistor k 425
Contextual Info: Philips Semiconductors Preliminary specification " NPN 8 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES • BFR591 711Qfi2b ÜOM5Sfll 425 H P H I N PINNING High power gain PIN • Low noise figure • SbE 7 =3 3 -0 5 1 High transition frequency • Gold metallization ensures

2N4256

Abstract: 2N4425 NPN, PNP for 500ma, 30v 2b0-b 2N4424 2N5174 2N5232 2N5232A 2N5249A 2N5305
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-Max. @ IC , V C E (V> (V) Max. Typical (M H z) C cb@ 10V 1 MHz Typical (Pf) @ 25° C (mW) fT V CE(SAT) l c . *B PT 2N 4256 2N4424 2N 4425 N PN NPN

0.2MF CAPACITOR

Abstract: TIL111 equivalent til111 DI-425
Contextual Info: D DIONICS INC. DI-425 65 RU SH M O RE S T R E E T W EST B U R Y , NEW Y O R K 11590 5161 997-7474 HIGH VOLTAGE Dl 425 SW ITC H ED A.C. B R ID G E C IR C U IT Monolithic Silicon Dielectrically Isolated Integrated Circuits The Dl 425 is a high voltage, monolithic dielec­

Transistor TT 2246

Abstract: single-supply wein bridge oscillator picoammeter schematic diagram TT 2246 transistor CA5160AE staircase generator CA5160 Wien Bridge Oscillator opamp CA5160E CA5160M
Contextual Info: HARRIS SEMICOND SECTOR blE ]> • 4302271 004b407 425 H H A S Cm HARRIS U U CA5160 S E M IC O N D U C T O R BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output March 1993 Features Description • MOSFET Input Stag* • Vary High Zj; 1-5Tfl 1 J x 1012Q Typ.

BLP05M7200

Contextual Info: BLP05M7200 Power LDMOS transistor Rev. 1 — 6 September 2012 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for various applications such as ISM and RF plasma lighting at frequencies from 425 MHz to 450 MHz. Table 1.

Contextual Info: 3 SLOTTED OPTICAL SWITCH OPTOELECTRONICS OPB866T51/OPB866T55 PACKAGE DIMENSIONS DESCRIPTION S E E NOTE 3 © 9 q — O P T IC A L •1 2 5 (3 -17 C E N T E R L IN E V r-.313 (7.94) U.485 (12.32) r-110 (2.79) .345 (8.76) J L. T .020 (0.51 K .425 P (10.80)

BCM 4359

Abstract: transistor 4287 AB transistor 3901
Contextual Info: 6091788 MICRO ELECTRONICS CORJP_ ña 82D 006^8 DEI bCm 7flfl D 7^* D 0 0 Gb 4 fl □ "7 J " TYPE V C E SA T FE C ASE Pd (mW) 'c (mA) V CEO (V) min max 'c (mA) max (V) ‘c (mA) fT min (MHz) Cob N.F. max max (pF) (dB) 3694 4249 4250 5138 N P P P T O -92A

2SD425

Abstract: toshiba 2sd425 2SB556 251C 2SB55 2SB555 2SD426 3g2q
Contextual Info: ^ 'jD y N P N E M m w L W M h ^ y v x ? SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR o n n m o m 2 s d 425 À 2 s d 42G U n i t i n mm m Pover A m p lifie r A p p lic a tio n s 02&OUAK. 0 2 1 .0 :*MAX. n • Irto : P C= 10 0 W 2 S D 4 2 5 ,2 S D 4 2 6 v j> t

L3317

Contextual Info: O rd e rin g n u m b e r: E 42589 CMOS LEI F SA\YO I LC7365N, 7366N N a2SB y L i D T M F T o n e G e n e r a to r fo r P u s h b a tto n T e le p h o n e T h e LC 7 3 G 5 N , 73G6N ere D T M F lone g en erato r L S t s for use in pushbuLton telephones. T h e LC 73G 5N con tains * k eyb o ard scan c irc u it Bnd the L C 7 3 S 6 N c a n d ire c t accept the Output from 0

Contextual Info: General Purpose Miniature Probes For Handheld Temperature Meters ߜ Made from Special MADE IN Limits of Error Material ߜ 6" Length Standard Shown smaller than actual size ߜ 1⁄8" OD Stainless Steel Sheath ߜ Molded Junction Discount Schedule Rated to 218°C 425°F

u28 sensor hall

Abstract: MLX2882 u28 hall marking 865 amplifier TLE4905 equivalent ss41 hall effect sensor melexis hall current sensor HAL105 UGN3132/33/34UA US2881
Contextual Info: 865;425;5# &026#+LJK#6HQVLWLYLW\#/DWFK#### HDWXUHV#DQG#%HQHILWV## • ■ ■ ■ ■ ■ Chopper Stabilized Amplifier Stage Optimized for BDC Motor Applications New Miniature Package/Thin, High Reliability Package# Operation Down to 3.5V CMOS for Optimum Stability, Quality and Cost

Contextual Info: 375Vin / 5Vout / 400Watts DC-DC Converter Module Model Number V375A5C400A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 5V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load

Contextual Info: 375Vin / 48Vout / 600Watts DC-DC Converter Module Model Number V375A48C600A Features • • • • • • • • • • • DC input range: 250 - 425V Input surge withstand: 550V for 100ms DC output: 48V Programmable output: 10 to 110% Regulation: ±0.2% no load to full load