TRANSISTOR JT Search Results

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

transistor tic 106

Abstract: Philips 2222-030 38109 heatsink catalogue BLV935 chip die npn transistor
Contextual Info: Philips Semiconductors Product specification UHF power transistor BLV935 FEATURES DESCRIPTION • Emitter ballasting resistors for an optimum temperature profile NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has

Contextual Info: DATA SH EET MOS FIELD EFFECT TRANSISTOR / ¿ P A 1 9 1 1 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The jtiPAI 911 PACKAGE DRAWING Unit : mm is a switching device which can be driven

VCC36

Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-40 40 Watts, 960-1215 MHz, 7 Features Preliminary Pulse, 50% Duty Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

transistor 355

Abstract: SHM-2E CC 1215
Contextual Info: Afa Avionics Pulsed Power Transistor PH0912-2.5 Preliminary 2.5 Watts, 960-1215 MHz, 7 ¿is Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

Contextual Info: Ma Avionics Pulsed Power Transistor PH0912-20 Preliminary 20 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

bd 142 transistor

Contextual Info: Part Number: Integra IB0912L200 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band JTIDS Transistor Class C Operation − High Efficiency The high power pulsed transistor device part number IB0912L200 is designed for systems operating over the instantaneous bandwidth of

MPS8098

Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage

Contextual Info: A ßi Avionics Pulsed Power Transistor PH0912-150 Preliminary 150 Watts, 960-1215 MHz, 7 ys Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration

PH1417-200S

Abstract: F 140 F140 C5 155 10 PH1417
Contextual Info: A/jtA PH1417-200S Avionics Pulsed Power Transistor Preliminary 200 Watts, 1.40-1.70 GHz, 10 jlis Pulse, 10% Duty Features • • • • • • • • • Outline Drawing Designed for Short Pulse Avionics Applications NPN Silicon Microwave Power Transistor

AM0912-150

Abstract: JTIDS 2L TRANSISTOR "RF Power Transistor"
Contextual Info: AM0912-150 RF POWER TRANSISTOR PACKAGE - .400 X .500 2L FLG DESCRIPTION: The ASI AM0912-150 is a Common Base Transistor Designed for TCAS and JTIDS Pulse Power Amplifier Applications. FEATURES INCLUDE: • Gold Metallization • Hermetic Package • Input/Output Matching

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-5 Preliminary 5 Watts, 960-1215 MHz, 7 us Pulse, 50% Duty Features Outline Drawing • Designed for JTIDS Applications • NPN Silicon Microwave Power Transistor • Common Base Configuration • Broadband Class C Operation

CC 1215

Contextual Info: Aß Avionics Pulsed Power Transistor PH0912-10 Preliminary 10 Watts, 960-1215 MHz, 7 |is Pulse, 50% Duty Features • • • • • • • • • Outline Drawing Designed for JTIDS Applications NPN Silicon Microwave Power Transistor Common Base Configuration

Contextual Info: KD621230 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U d l D s r lin C jtO P Transistor Module 300 Amperes/1200 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed for use

marking tr

Abstract: 2SD1699 IEI-1213 MEI-1202 MF-1134 L1207
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1699 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 16 99 is NPN silicon epitaxial darlington transistor designed for pulse m otor, printer driver, solenoid driver. Circuits. FEATURES • High DC Current gain.

transistor 3l2

Contextual Info: fOMdZOT KD224503 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D d fH n C jtO n Transistor Module 30 Amperes/600 Volts Description: The Powerex Dual Darlington Transistor Modules are high power devices designed tor use

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

300 volt 16 ampere transistor

Abstract: powerex ks62
Contextual Info: POldEREX INC =JñD D • 7ET4hai 00G2E03 m N ER EX ^ 1 KS621A40 Powerex, Inc., Mills Street, Youngwood, Pennsylvania 15697 412 925-7272 f Tentative Fast Switching Single Darlington Transistor Module 400 Amperes/125 Volts Description t<jTUNtC*A*U6 Powerex Fast Switching Single Transistor

transistor s46

Abstract: KS621220A7 s45 diode DIODE S45 powerex ks62
Contextual Info: m/mac KS621220A7 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S lt lQ lG D S r H t lC jt O n Transistor Module 200 Amperes/1200 Volts OUTLINE DRAWING Description: The Powerex Single Darlington Transistor Modules are high power

Contextual Info: SAMSUNG S EM I C ON D UC T OR I NC MPS8098 14E D jT 'ib M m a 0007337 M | NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Vbitage: Vcto=60V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

7901S

Contextual Info: O rd erin g n u m b er: EN5099 , FC154 NPN/PNP Epitaxial Planar Silicon Transistor High-Speed Switching, High-Frequency Amp Applications Features • Composite type with an NPN transistor and a PNP transistor contained in the conventional CP package, improving the mounting efficiency greatly.

MPSA45 equivalent

Abstract: transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPSA45 14E O JT T b M lM S 000731,2 3 NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 HIGH VOLTAGE TRANSISTOR • Collector-Emitter Voltage: Vc*o =350V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic

MMT3823

Abstract: micro-T Package
Contextual Info: MMT3823 silicon MICRO-MINIATURE JUNCTION FIELD-EFFECT TRANSISTOR MICRO-T SILICON N-CHANNEL JUNCTION FIELD-EFFECT TRANSISTOR SYM M E TR IC A L SILICON N-CHANNEL Depletion Mode (Type A ) Fieid-Effect Transistor designed for RF amplifier and mixer applications where high density packaging is