TRANSISTOR JC 817 Search Results

Contextual Info: M.S. KENNEDY CORP. DUAL HIGH POWER OP-AMP 2541 8170 Thompson Road • Cicero, N.Y. 13039 315 699-9201 FEATURES: • High Output Current - 10 Amps Peak • Wide Power Supply Range - ±10V to ±40V • On Board Current Limit • Fet input • Isolated Case

sk1461

Abstract: sk 100 transistor
Contextual Info: M í f t H,GH SPoEpEampOLTAGE 1 4 6 1 M .S . K E N N E D Y C O R P 315 699-9201 8170 Thompson Road •Cicero, N.Y. 13039 FEATURES: Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions Large Galn-Bandwldth Product FET Input

Contextual Info: KENNEDY fl S CORP M ^K M.S. KENNEDY CORP. b 3E D 5134300 00001Ö2 HIGH POWER AMPLIFIER b34 • HSK 161 8170 Thompson Road • Cicero, N.Y. 13039 (315) 699-9201 FEATURES: • • • • • • High Output Current Wide Supply Range Low Cost Class “C” Output Stage

TRANSISTOR BC 137

Abstract: TRANSISTOR BD 338 transistor BD 141 TRANSISTOR 328 SOT89 PXTA14 JC546 transistor BC 56 2PA1015 JC sc70 2PC1815
Contextual Info: P h ilip s Sem iconductors Concise Catalogue 1996 SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Small-signal transistors G ENER AL-PU R PO SE LO W -FREQ UENCY TRANSISTO RS OVERVIEW PRO DUCT DATA: PAG ES 7-16 LOW -POW ER NPN surface-m ount leaded

Contextual Info: KENNEDY H S M.S. KENNEDY CORP. CORP b3E D • S1343D0 D0002D2 HIGH SPEED/VOLTAGE OP AMP SS2 ■ MSK 1461 (315) 699-9201 8170 Thompson Road • Cicero, N.Y. 13039 FEATURES: • • • • • • Extremely Fast Wide Supply Range ±15V to ±45V VMOS Output, No S.O.A. Restrictions

Contextual Info: SCS-THOMSON ^ 0 û ^ @ E Œ iM ( 2 M ( S S TD A 8179F TV VERTICAL DEFLECTION BOOSTER AD V A N C E DATA POWER AMPLIFIER FLYBACK SUPPLY VOLTAGE SEPARATED THERMAL PROTECTION CURRENT LIMITED TO GND DESCRIPTIO N Designed for Monitors and high performance TVs,

Contextual Info: M.S. KENNEDY CORP. POWER OPERATIONAL AMPLIFIER 8170 Thompson Road • Cicero, N.Y. 13039 115 315 699-9201 FEATURES: • • • • • High Output Current — 15A peak Ultra Low Thermal Resistance — 0.28°C /W Excellent Linearity — Class A/B Output

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

Contextual Info: S G S - T H O M S O N A T /. M «glLilgm 5ÜIDIgi_A M 817 1 9 -0 3 0 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS P R E L IM IN A R Y D A T A i REFRACTO RY/G O LD METALLIZATION • EM ITTER SITE BALLASTED . LOW THERMAL RESISTANCE . IN PU T/O U TPU T MATCHING

MSC1002

Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
Contextual Info: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition

transistor jc 817

Abstract: 2n5680 WCB410
Contextual Info: philips Sem iconductors • ^ 53^31 0 0 HS177 ATT ■ APX Preliminary specification Silicon planar epitaxial transistor 2N5680 b^E D N AP1ER PHIL I P S / D I S C R E T E Q U IC K R E F E R E N C E DATA PARAM ETER SYM BO L MIN. CONDITIONS MAX. ~VCBO “ VcEO

D 5038 Transistor Horizontal

Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
Contextual Info: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching

AN105 infineon

Abstract: BCR450 BCR450U BCR401U LXML-PWC1-0040 BCR402u boost bcr401 BCR402R hg lamp ballast LED lights manufacturing technology
Contextual Info: A pp li c at io n N o t e, R e v . 1. 0 , N ov e m be r 2 00 8 A p p li c a t i o n N o t e N o . 1 5 9 L o w - C o s t, L i n e a r M o de , 7 1 % E f f i c i e n c y 38 0 m A L E D D r i v e r D em o u s i n g t h e B C R 4 0 1 R , B C X 6 8 & LUXEON Rebel LEDs

smd npn 2n2222

Abstract: bf471 BSR62 equivalent EQUIVALENT TRANSISTOR bc549c transistor bf 175 transistor bc547 PH in metal detector tunnel diode BSY95A BF470 BC200
Contextual Info: SM ALL-SIGNAL TRANSISTORS page Selection guide A udio and general purpose a p p lica tio n s. 5 HF applications.

BSV64

Abstract: BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D110 BSV64 NPN medium power transistor Product specification Supersedes data of 1997 Apr 21 File under Discrete Semiconductors, SC04 1997 Sep 04 Philips Semiconductors Product specification NPN medium power transistor BSV64

Transistor BC177

Abstract: SOT-18 BC177 pnp transistor DATASHEET Transistor BC107 BC177 TRANSISTOR bc177b BC107 BC177A BC177B BC177 NPN transistor
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET * M3D125 BC177 PNP general purpose transistor Product specification Supersedes data of 1997 May 01 File under Discrete Semiconductors, SC04 1997 Jun 04 Philips Semiconductors Product specification PNP general purpose transistor

AM81719-040

Contextual Info: AM81719-040 RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS . . . PRELIMINARY DATA REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 40 W MIN. WITH 7 dB GAIN .400 X .400 2 LFL M228

transistor 2n1711

Abstract: 2N1711 BP317 st 2n1711 "2N1711" 2N1711 philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1711 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 28 Philips Semiconductors Product specification NPN medium power transistor

transistor jc 817

Abstract: MG150q2yk1 470G jc 817
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150Q2YK1 TENTATIVE DATA HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm fi-FAST-ON-TAB t 1 1 0 FEATURES: \ JAPAN » 3~M5 P_ 0 & 5 ÌIO .3 . The Collector is Isolated from Case. . Power Transistors and 2 Free Wheeling

ic str 6707

Abstract: 2n3019 equivalent IC 7430 datasheet datasheet str 6707 str 6707 datasheet IC str 6752 2N3019 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 2N3019 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 19 Philips Semiconductors Product specification NPN medium power transistor

2108 npn transistor

Abstract: BFX34 BP317
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D111 BFX34 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 22 Philips Semiconductors Product specification NPN switching transistor BFX34

BP317

Abstract: LAE4002S SC15
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LAE4002S NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4002S

SOT-100

Abstract: BP317 LAE4001R SC15 transistor jc 817 sot100
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LAE4001R NPN microwave power transistor Product specification Supersedes data of June 1992 File under Discrete Semiconductors, SC15 1997 Feb 18 Philips Semiconductors Product specification NPN microwave power transistor LAE4001R

transistor 2n1613

Abstract: 2N1613 2n1613 st BP317 1na120
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N1613 NPN medium power transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 11 Philips Semiconductors Product specification NPN medium power transistor