TRANSISTOR J37 Search Results

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

PH1214-2M

Abstract: .15 j63 1.5 j63 1035 transistor
Contextual Info: an AMP company Radar Pulsed Power Transistor, 2W, loops Pulse, 10% Duty 1.2 - 1.4 GHz PH1214-2M v2.00 Features c_I- NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors

J37 transistor

Abstract: transistor j8 transistor j37 J370 capacitor J37 PH3134-9L transistor j145
Contextual Info: = - an AMP company Radar Pulsed Power Transistor, SW, 300~s Pulse, 10% Duty Pti3134-9L 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency InterdigitatedGeometry Diffused Emitter Ballasting Resistors

diode marking j35

Abstract: 2SK1109 D1594 J34-J35 2SK110 2SK1109 J35 marking j32 2SK1109J31
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK1109 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK1109 is suitable for converter of ECM. 0.8 FEATURES 1.8 MIN. • Compact package

transistor c36

Abstract: wacom wacom connector transistor j8 f 9234 transistor B 325 PH3134
Contextual Info: =5= ,-= E -= EF an AMP company * ,- .-z = Radar Pulsed Power Transistor, 11 W, lps Pulse, 10% Duty PH3134-11s 3.1 - 3.4 GHz Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation High Efficiency Interdigitated Geometry

F1 J37

Abstract: class-A amplifier RF NPN POWER TRANSISTOR 2.5 GHZ 1S2075 NEL2001 NEL200101-24 NEL2004 NEL2012 NEL2035
Contextual Info: DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier NEL2001012-24 of NPN epitaxial microwave power transistors 1.5 ±0.2 is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. 1.0 MIN. OUTLINE DIMENSIONS Unit: mm

Transistor AC 51 0865 75 730

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25Pmx1500Pm

FPD1500SOT89CE

Abstract: 4506 gh Transistor BJT 547 b fpd1500sot89cesr 1850G
Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

Transistor AC 51 0865 75 834

Contextual Info: FPD1500SOT89CE FPD1500SOT8 9CELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m

FPD1500SOT89E

Abstract: est 0114 FPD1500SOT89 MIL-HDBK-263
Contextual Info: FPD1500SOT89E FPD1500SOT8 9E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89E is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm

motorola MRF559

Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor
Contextual Info: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts

FPD1500SOT89

Abstract: FPD1500SOT89E MIL-HDBK-263 FPD1500SOT89CE 4506 gh
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

j378

Abstract: 2SJ378
Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance

J377

Abstract: j377 datasheet 2SJ377 silicon power J377 transistor j377
Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance

Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance

j378

Abstract: 2SJ378
Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance

J377

Abstract: 2SJ377 j377 datasheet silicon power J377 transistor j377
Contextual Info: 2SJ377 2 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type L −π−MOSV 2SJ377 Relay Drive, DC/DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON-resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance

PH3134-10M

Abstract: RF NPN POWER TRANSISTOR 3 GHZ 10W RF NPN POWER TRANSISTOR 3 GHZ J14-5 J-145
Contextual Info: PH3134-10M Radar Pulsed Power Transistor 10W, 3.1-3.4 GHz, 100µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

7111

Abstract: MS2202
Contextual Info: MS2202 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features • • • • • • • 1025 - 1150 MHz 35 VOLTS INPUT MATCHING POUT = 2.0 WATTS GP = 9.0 dB MINIMUM LOW THERMAL RESISTANCE COMMON BASE CONFIGURATION DESCRIPTION: The MS2202 is a low power Class C NPN transistor specifically

Contextual Info: PH3134-9L Radar Pulsed Power Transistor 9W, 3.1-3.4 GHz, 300µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation

pseudomorphic HEMT

Abstract: FPD1500SOT89 FPD2250SOT89 FPD2250SOT89E MIL-HDBK-263 FPD2250SOT FPD2250
Contextual Info: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT RoHS Compliant and Pb-Free Package: SOT89 Product Description Features The FPD2250SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

Contextual Info: PH3134-11S Radar Pulsed Power Transistor 11W, 3.1-3.4 GHz, 1µs Pulse, 10% Duty M/A-COM Products Released, 10 Jul 07 Outline Drawing Features • • • • • • • • • NPN silicon microwave power transistors Common base configuration Broadband Class C operation