TRANSISTOR J 330 Search Results

BLW60C

Contextual Info: , Line, J.£.i±£.ii tx >J TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. VHP power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile, industrial

transistor tt 2222

Abstract: D2l10 BLV33F transistor rf vhf G37 IC
Contextual Info: N AHER PHILIPS/DISCRETE bTE D • b b S B 'J a i J □ G 2 Û R ei 7 144 IAPX BLV33F V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor prim arily intended fo r use in linear v.h.f. amplifiers fo r television transmitters and transposers.

Contextual Info: N AMER PHILIPS/DISCRETE b'lE D • bbSB'iai QQEfiTfiS IEE B LV33 _ J \ _ V.H.F. LINEAR POWER TRANSISTOR N-P-N silicon planar epitaxial transistor primarily intended for use in linear v.h.f. amplifiers for television

MDB Resistor

Abstract: 2N1224 2N1225 transistor equivalent table IRC MMC carbon marking "3AA" 410B
Contextual Info: MIL-S-195QO/189B 18 January 1972 SUPERSEDING \/TTT —C - l O R n n / I Ö QA 1T11U U X * J \ J \ J \ J lU V iTl 26 A pril 1966 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPES 2N1224 AND 2N1225 in is specification is m andatory for use by all D epart­

11AA4

Contextual Info: H llA A l - H11AA4 tSOCOM AC INPUT COUPLED ISOLATOR Ga AS INFRARED EMITTING DIODE & NPN PHOTO-TRANSISTOR PACKAGEDEMENSIONSINCHES MM SCHEMATIC j 44_ .070 (1.78) Typ .100 (2.54) -M Typ -* j 1 *- 1 ! h u.140 (Ì.56)Min (si a t ^¡1/ o Q) (¿) (j .350 (8.89)

Q62702-D401

Abstract: TRANSISTOR bd 330 b0330 A-04 Q62702-D395 Q62902-B63 spring washer 330 transistor transistor BD 329 4l transistor
Contextual Info: 2SC J> m ÔSBSbQS GGQHBMÌ T H S I E â PNP Silicon Planar Transistor _ BD 330 25C 04-349 D 7~“ 3 W / SIEMENS AKTIENGESELLSCHAF BO 3 3 0 is an epitaxial PNP silicon planar transistor in TO 126 plastic package 12 A 3 DIN 41 869, sheet 4 . Together with its complementary transistor BD 329 it is particularly

SD1478

Abstract: vhf amplifier
Contextual Info: . S G DGOGQaOT □ 4C S- THOMSON - J J - 07 r >'",./ T -'J - • > : ' •• • ~~I p. SSM % , s t. * s * ? - . ^ V , = .- $ * > • ~ -:• j ‘ §! ÈiSiS#S®M r ifM m v m -: ' iMôntgëmê^vMli 1=- VHF COMMUNICATIONS TRANSISTOR DESCRIPTION SSM device type SD1478 is a 12.5 volt epitaxial silicon NPN planar

9945a

Abstract: ic 9945 a 8 pin ci 9933 b 9945 A transistor 9945 A 9962 GH cx 3120 inverter circuit diagram 9936 9936 GN diode 9948
Contextual Info: FAIRCHILD DIODE-TRANSISTOR MICROLOGIC INTEGRATED CIRCUITS COMPOSITE DATA SHEET A FAIRCHILD COMPATIBLE CURRENT SINKING LOGIC PRODUCT 0 °C TO 7 5 °C TEM PERATURE RANGE GENERAL DESCRIPTION— Fairchild Diode Transistor Micrologic DT/j L Integrated Circuits family uses

BFX29

Abstract: bfx29 transistor 1N916 IEC134 ScansUX894
Contextual Info: BFX29 J V_ SILICON PLANAR EPITAXIAL TRANSISTOR PNP transistor in a TO-39 metal envelope for general industrial applications. QUICK REFERENCE DATA Collector-base voltage open emitter - v CBO max. 60 V Collector-emitter voltage (open base) -V c E O

PH2729-65M

Contextual Info: z-z -,-= 2 .-= -= -= =c r s an AMP company * Radar Pulsed Power Transistor, 65W, loops Pulse, 10% Duty PH2729-65M 2.7 - 2.9 GHz I v2.00 .300 22.86 Features -:i~~~)-j ( NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation

Contextual Info: bbSBIBl DQ25T47 b47 « A P X N AHER PHILIPS/DISCRETE b7E J> PNP switching transistor Philips Semiconductors FEATURES Product specification PMST4403 PIN CONFIGURATION • S-mini package • High collector current. DESCRIPTION PNP silicon planar epitaxial transistor in a plastic SOT323

Contextual Info: N AMER PHILIPS/DISCRETE ObE D • bbSBTBl 0015121 T I _ J V PVB42004X T ~ Z 1 - 01 MICROWAVE POWER TRANSISTOR N-P-N silicon microwave power transistor for use in a common-base, class-B power amplifier up to 4,2 GHz. Features:

Contextual Info: _ _ _ _ _ _ PowerMOS transistor N AMER PHILIPS/DISCRETE B U Z 4 5 A _ ObE D ^ • bbSa^l O D m b S M J ’ ~ ~ T - 2? - i 3 July 1987 GENERAL DESCRIPTION N-channel enhancement moae field-effect power transistor in a metal envelope.

BLU98

Contextual Info: N AUER PHILIPS/DISCRETE bTE T> m bbS3S3i ooeaaaB BLU98 J U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • emitter-ballasting resistors fo r an optimum temperature profile

TRANSISTOR BO 345

Abstract: TRANSISTOR BO 344
Contextual Info: BU407 NPN PLASTIC POWER TRANSISTOR High Voltage, High Speed Transistors for Horizontal Deflection Output Stages of TVs and CRTs CD E 01M A e 1 c 1 ^ 1 6 o jr ~ t * ' 3 t j f t ' I I |J 1 3- D E r C H J K L M N MIN MAX 16.51 10.67 4.83 0.90 1,15 1,40 3,88 3,75

MC 140 transistor

Abstract: "MC 140" transistor buz355 transistor 502 alps 502 C alps 503 a
Contextual Info: N AMER PHILIPS/DISCRETE j ObE D • PowerMÔS transistor ^53131 0014015 5 m BÜZ355 r - 3cj - l 3 May 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in

Contextual Info: N AMER PHI LIP S/ DIS CR ETE j DhE D • PowerMOS transistor bbEBTBl 0014615 5 ■ BUZ155 T- 3V' 13 May 1987 GENERAL DESCRIPTION N-channel enchancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

lv 5682

Abstract: mar 835 mosfet MAS 560 ag TRANSISTOR D 5702 RD60HUF1 MOSFET, 3077 transistor k 2837
Contextual Info: ATTENTION OBSERVE PRECAUTIONS 1'OR HANDLING Revision date: J 2th/M ar.;02 MITSUBISHI RF POW ER MOS FET h le x ro s ta tic SENSITIVE DEVÏCES RD60HUF1 Silicon MOSFET Power Transistor, 520M Hz 60W DESCRIPTION OUTLINE DRAW ING RD60HUF1 is a MOS FET type transistor specifically

Contextual Info: N AMER PHILIPS/DISCRETE bb.53331 □□33117 311 • APX BLV90/SL h3E D J V U H F POWER TRANSISTOR NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. Features: • diffused emitter-ballasting resistors for an optimum temperature profile.

transistor for horizontal deflection output

Abstract: bu109
Contextual Info: BU109 NPN POWER TRANSISTOR High Voltage, High Speed Transistor for Horizontal Deflection Output Stages of TV's and CRT's Applications 013 DIM A B C D E F G H J K L M MIN MAX 39.37 22,22 8,50 6,35 1.09 0,96 .1,77 29,90 30,4 10,69 11,18 5,72 5,20 16,64 17,15

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbSS^l DQ150fl3 b PKB3005U MAINTENANCE TYPE J for new design use PVB32005X MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

B861 transistor

Abstract: equivalent transistor TT 3034 transistor b722 b863 PK2222A a774 transistor TT 3034 tc 144e TRANSISTOR 124E A771 TRANSISTOR
Contextual Info: R OJ N m DTA/DTB/DTC/DTD I DIGITAL TRANSISTOR APPLICATION: • j EQUIVALENT CIRCUITS: Inverter, D river & Interface Circuits FEA T U R ES; • R ep laces up to three parts 1 transistor & 2 resis­ tors with one part • Available in a variety of surface mount or leaded

2n1183 germanium transistor pnp

Abstract: 2N1183 2N1183A 2N1184
Contextual Info: MIL-S-19500/143 El AMENDMtNi-2 10 June 1969 SÜPE5ÎE5ÎFR5-AMENDMENT-1 16 July 1968 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM f ilia l ip j , ol ?K JllfU TU>. I in » 11 in n A iQ J A f 9K J11R 1A i (-iv u m ii

9R120C

Abstract: 1/power MOSFET 9R120C IPW90R120C3 JESD22 9R120
Contextual Info: IPW90R120C3 CoolMOS Power Transistor Product Summary Features • Lowest figure-of-merit R ON x Qg • Extreme dv/dt rated V DS @ T J=25°C 900 V R DS on ,max @ T J=25°C 0.12 Ω Q g,typ 270 nC • High peak current capability • Qualified according to JEDEC1) for target applications