PKB3005U Search Results

Contextual Info: PKB3005U Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)45 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)18 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: N AMER PHILIPS/DISCRETE ObE D bbSS^l DQ150fl3 b PKB3005U MAINTENANCE TYPE J for new design use PVB32005X MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

PKB3005U

Contextual Info: N AMER PHILIPS/DISCRETE □ bE D bbS3T31 I MAI NTENANCE TYPE for new design use PVB32005X 0015003 PKB3005Ü r-ss-oî? MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w. conditions and is recommended in common-base class-B amplifiers up to 3 GHz.

FET BFW10

Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Contextual Info: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI