TRANSISTOR IRF530 Search Results

transistor irf 647

Abstract: transistor IRF 531 transistor irf 064 irf 570 p570
Contextual Info: MOTOROLA IRF530 IRF531 IRF532 IRFS33 SEMICONDUCTOR TECHNICAL DATA N-CHANNEL ENHANCEMENT-MODE SILICON GATE TMOS POWER FIELD EFFECT TRANSISTOR These T M O S Power FETs are designed for low voltage, high speed power switching applications such as switching regulators,

D84DL2

Abstract: IRF530 N-Channel fet
Contextual Info: IRF530,531 D84DL2,K2 Ftrnr HELD EFFECT POWER TRANSISTOR 114.0 AMPERES 100, 60 VOLTS R[ S ON) = 0.18 n This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.

IRF530N

Abstract: IRF530N applications
Contextual Info: Philips Semiconductors Product specification N-channel TrenchMOS transistor FEATURES IRF530N SYMBOL QUICK REFERENCE DATA • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance d VDSS = 100 V ID = 17 A g RDS ON ≤ 110 mΩ

Contextual Info: IRF530 Product Preview TMOS E−FET. Power Field Effect Transistor N−Channel Enhancement−Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain−to−source diode with a fast

AN569

Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Advance Information IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.16 W This advanced TMOS power FET is designed to withstand high

IRF530FP

Contextual Info: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY

AN569

Abstract: IRF530
Contextual Info: MOTOROLA Order this document by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IRF530 TMOS E-FET. Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 14 AMPERES 100 VOLTS RDS on = 0.140 W This advanced TMOS power FET is designed to withstand high

Contextual Info: Zjï SGS-THOMSON ¡ILIOTI^OKinei IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530FP V d s s 100 V R d S o ii < 0.16 a Id 10 A . TYPICAL RDs(on) =0.12 £2 . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C . LOW GATE CHARGE

irf530

Abstract: transistor sec 623
Contextual Info: Tem ic IRF530 Siliconix N-Channel Enhancement-Mode Transistor Product Summary V BR DSS (V) 100 r DS(on) (Q) 0.18 I d (A) 14 TO -220AB o DRAIN connected to TAB Ô GD S s lop View N-Channel MOSFET Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)

IRF530FP

Abstract: OT 306 IRF 950
Contextual Info: IRF530FP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF 530FP • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.16 Ω 10 A TYPICAL RDS(on) = 0.12 Ω 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE AVALANCHE RUGGED TECHNOLOGY

IRF530

Abstract: transistor irf530 IRF530FI IRF530 application O-220F transistor irf 130 O220F tr irf530
Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: MOTOROLA O rder this docum ent by IRF530/D SEMICONDUCTOR TECHNICAL DATA Product Preview IR F530 TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy

IRF530

Abstract: IRF530 IRF530FI IRF530F DATA SHEET OF IRF530 IRF530FI equivalent IRF530FI transistor irf530 tr irf530
Contextual Info: IRF530 IRF530FI  N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IRF530 IRF530F I • ■ ■ ■ ■ ■ ■ ■ V DSS R DS on ID 100 V 100 V < 0.16 Ω < 0.16 Ω 16 A 11 A TYPICAL RDS(on) = 0.12 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: IRF530 IRF530FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE IR F 530 IR F 5 3 0 F I . . . . . . . . V d ss R d S o ii 100 V 100 V < 0.1 6 Q. < 0.1 6 Q. Id 16 11 A A TYPICAL RDs(on) =0.12 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

Contextual Info: PD - 95788 IRG4BC40WSPbF IRG4BC40WLPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Contextual Info: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRF530S

Contextual Info: PD - 95782 IRG4BC20W-SPbF INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

Transistor BC 457

Abstract: bc 457 3000 0442 bc 457 datasheet IRF530S IRG4BC40WL IRG4BC40WS IRL3103L DSA0031076
Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

IRF530S

Abstract: IRG4BC40WL IRG4BC40WS IRL3103L
Contextual Info: PD - 95861 IRG4BC40WS IRG4BC40WL INSULATED GATE BIPOLAR TRANSISTOR Features C • Designed expressly for Switch-Mode Power Supply and PFC power factor correction applications • Industry-benchmark switching losses improve efficiency of all power supply topologies

smd transistor x8

Abstract: smd transistor c011 12v 3a regulator LM317 WP smd transistor M5482 L298 L297 M5480 5kw dc-dc SGSF463 BYT12PI100
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type Function ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

Schottky diode TO220 15A 1000V

Abstract: smd transistor c011 diode matrix rom LM317 DIP PACK transistor SMD 5kw smd L272 bdx54 smd LM317 SMD smps power supply 1500w amp TRANSIL DIODE smd
Contextual Info: DATA LOGGERS RECOMMENDED PRODUCTS FROM SGS-THOMSON PRINT HEAD HAMMER DRIVE Type ULN2003A ULN2064B ULN2068B ULN2074B L702N/A L6221AS L9222 Function High Current Darlington Drivers Medium Current Low Saturation Transistor Array BDX53 BDX54 Series BDW93 & BDW94 Series

A12Q

Contextual Info: PD - 95229B IRGB6B60KDPbF IRGS6B60KDPbF IRGSL6B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10 s Short Circuit Capability. • Square RBSOA.

Contextual Info: PD - 94925A IRGB10B60KDPbF IRGS10B60KDPbF IRGSL10B60KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA.