TRANSISTOR IC 1A Search Results

Contextual Info: OBSOLETE - PLEASE USE ZXTC4591AMC ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A

2SC4517

Abstract: 4517A transistor 800V 1A 2sc4517a
Contextual Info: 2SC4517/4517A Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VEB=7V 100max µA IC=10mA 550min V hFE VCE=4V, IC=1A 10 to 30 VCEO 550 V IEBO VEBO 7 V V(BR)CEO 3(Pulse6) A IC 2SC4517 2SC4517A 10.1±0.2

diode RU 3AM

Abstract: diode RU 4B RG-2A Diode diode RU 4AM MN638S FMM-32 SPF0001 red green green zener diode Diode RJ 4B sta464c
Contextual Info: Index by Part No. Part No. 130 Classification Page Part No. Classification Page 2SA1488 Power transistor 66 ATS611LSB Hall-Effect IC Subassembly 2SA1488A Power transistor 66 ATS612LSB Hall-Effect IC (Subassembly) 2SA1567 Power transistor 67 AU01 Fast-Recovery Rectifier Diode (Axial)

vbe 12v, vce 600v NPN Transistor

Abstract: 2SC3831
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

2SC4299

Contextual Info: 2SC4299 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 800 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 800min V 3(Pulse6) A hFE VCE=4V, IC=1A 10 to 30 IB 1.5 A VCE(sat) IC=1A, IB=0.2A 0.5max

2SC3927

Abstract: DSA0016508
Contextual Info: 2SC3927 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor V ICBO VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse15) A hFE VCE=4V, IC=5A 10 to 28 5 A VCE(sat) IC=5A, IB=1A 0.5max PC

pnp npn dual emitter connected

Abstract: ZETEX complementary transistor PRODUCT LINE design ideas MARKING 91A NPN MARKING 91A NPN transistor Surface mount NPN/PNP complementary transistor MLP832 TS16949 ZXTD4591AM832 ZXTD4591AM832TA
Contextual Info: ZXTD4591AM832 MPPS Miniature Package Power Solutions Complementary dual 40V high performance transistor Summary NPN Transistor - VCEO = 40V; RSAT = 195m⍀; IC = 2.5A PNP Transistor - VCEO = -40V; RSAT = 350m⍀; IC = -2A Description Packaged in the 3mm x 2mm MLP Micro Leaded

2SC4557

Contextual Info: 2SC4557 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor Unit VCB=800V 100max µA VCEO 550 V IEBO VEB=7V 100max µA 7 V V(BR)CEO IC=10mA 550min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 28 A VCE(sat) IC=5A, IB=1A 0.5max 80(Tc=25°C)

Contextual Info: UNISONIC TECHNOLOGIES CO., 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V, Ic = -1A *Good hFE linearity.

transistor 1012 TO252

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR  DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor.  FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.

NPN Transistor VCEO 80V 100V

Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100
Contextual Info: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR „ DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. „ FEATURES * High breakdown voltage and high current. * BVCEO= -80V, IC= -1A * Good hFE linearity.

2SB1260

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

FHB772

Abstract: FHB772P FHB772E SOT89 2A transistor MARKING 2A
Contextual Info: ৖ൈྯ૵਌ PNP SILICON POWER Transistor PNP SILICON POWER Transistor FHB772 ৖ൈྯ૵਌ DESCRIPTION & FEATURES 概述及特點 。Low saturation voltage VCE sat0 <0.5V(@IC =-2A,IB =-0.2A 。Excellent HFE linearity and high HFE HFE:60 to 400(VCE=-2V,IC=-1A)

transistor dk 50

Abstract: transistor dk transistor 2SC4672 dk transistor
Contextual Info: UTC 2SC4672 TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. 1 FEATURES *Low saturation voltage, typically VCE (sat)=0.1V at IC / IB=1A / 50mA *Excellent DC current gain characteristics

2SD2583

Abstract: Audio Output Transistor Amplifier transistor Ic 1A datasheet NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION •High Collector Current-IC= 5A ·Low Saturation Voltage : VCE sat = 0.15V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain: hFE= 150~600@ IC= 1A APPLICATIONS

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

FHD882

Abstract: FHD882E FHD882R FHD882Q
Contextual Info: ৖ൈྯ૵਌ NPN SILICON POWER Transistor NPN SILICON POWER Transistor FHD882 ৖ൈྯ૵਌ DESCRIPTION & FEATURES 概述及特點 。Low saturation voltage VCE sat0 <0.5V(@IC = 2A,IB = 0.2A 。Excellent HFE linearity and high HFE HFE:60 to 400(VCE=2V, IC=1A)

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

d619

Abstract: sot23-6 package marking d619 transistor d619 data ZUMT619 ZXTD09N50DE6 ZXTD09N50DE6TA ZXTD09N50DE6TC
Contextual Info: ZXTD09N50DE6 E6 SuperSOT DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 160m ; IC= 1A DESCRIPTION A dual NPN low saturation transistor combination contained in a single 6 lead SOT23 package. Each transistor is the equivalent to the ZUMT619 device.

vbe 12v, vce 600v NPN Transistor

Contextual Info: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC

2SC4672

Abstract: R208 transistor 2SC4672
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA