TRANSISTOR IC 1A Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR 1 DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. SOT-89 FEATURES *High breakdown voltage and high current. BVCEO= -80V, IC= -1A *Good hFE linearity.

Contextual Info: UTC 2SB1260 PNP EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR DESCRIPTION The UTC 2SB1260 is a epitaxial planar type PNP silicon transistor. 1 FEATURES *High breakdown voltage and high current. BVCEO= -80V,Ic = -1A *Good hFE linearity. *Low VCE sat SOT-89

2SC4672

Abstract: R208 transistor 2SC4672
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC4672 NPN SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR 50V,2A „ DESCRIPTION The UTC 2SC4672 is a low frequency transistor. Excellent DC current gain characteristics. „ FEATURES *Low Saturation Voltage, Typically VCE(SAT)=0.1V at IC / IB=1A / 50mA

SILICON PNP POWER TRANSISTOR

Abstract: y135
Contextual Info: KSB798 PNP EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER SOT-89 • Collector Current: IC = -1A • Collector Dissipation: PC = 2W ABSOLUTE MAXIMUM RATING TA=25°°C Characteristic Symbol VCBO VCEO VEBO IC (DC) IC (Pulse) PC TJ T STG Collector-Base Voltage

2SB860

Abstract: 2SD1137
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB860 DESCRIPTION •Collector Current: IC= -4A ·Low Collector Saturation Voltage : VCE sat = -1.0V(Max)@IC= -1A ·High Collector Power Dissipation ·Complement to Type 2SD1137

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PRELIMINARY PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * Low saturation voltage. VCE(SAT)=-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC current gain characteristics *Pb-free plating product number:2SA1797L

SSD103

Contextual Info: Surface-mount Power Transistor SSD103 Test Conditions ICBO IEBO VCEO hFE VCE sat VFEC Es/b VCB = 60V, I E = 0A VEB = 6V, IC = 0A IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA I FEC = 6A L = 10mH min 60 400 65 800 0.11 1.25 max 10 10 70 1500 0.15 1.5 80

2N6420

Abstract: transistor pnp 1a operational amplifier power 1A
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2N6420 DESCRIPTION •Contunuous Collector Current-IC= -1A ·Power Dissipation-PC= 35W @TC= 25℃ ·Collector-Emitter Saturation Voltage: VCE sat = -5.0 V(Max)@ IC = -1A APPLICATIONS

Contextual Info: Ordering number : ENN3511A 2SA1785 : PNP Epitaxial Planar Silicon Transistor 2SC4645 : NPN Triple Diffused Planar Silicon Transistor 2SA1785/2SC4645 High Voltage Driver Applications Features Package Dimensions • Large current capacity IC=1A . · High breakdown voltage (VCEO≥400V).

MARKING SMD PNP TRANSISTOR R

Abstract: MARKING SMD TRANSISTOR P SMD TRANSISTOR MARKING BE BE MARKING bvceo MARKING SMD PNP TRANSISTOR 2SB1260
Contextual Info: Transistors SMD Type Power Transistor 2SB1260 Features High breakdown voltage and high current.BVCEO= -80V, IC=-1A Good hFE linearity. Low VCE sat . Epitaxial planar type PNP silicon transistor Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

IC 630

Contextual Info: A Product Line of Diodes Incorporated ZXTC6717MC DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION Features Mechanical Data NPN Transistor • BVCEO > 15V • IC = 4.5A Continuous Collector Current • Low Saturation Voltage 100mV max @ 1A •

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications.  FEATURES *Low collector saturation voltage: VCE SAT =-0.5V(MAX) (IC=-1A)

transistor 2sc3858

Abstract: 2SC3858 2sc3858 transistor 2sa1494 characteristics 2SC3858 2sc3858 safe operating area
Contextual Info: 2SC3858 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SA1494 200 V ICBO VCB=200V 100max µA IEBO VEB=6V 100max µA 200min V VEBO 6 V V(BR)CEO IC 17 A hFE VCE=4V, IC=8A 50min∗ IC=10A, IB=1A 2.5max V IC=50mA 24.4±0.2 A PC 200(Tc=25°C)

Contextual Info: TSD2150A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 80V BVCEO 50V IC 3A VCE SAT Features ● ● 0.5V @ IC / IB = 2A / 200mA Ordering Information Low VCE(SAT) 0.1 @ IC / IB = 1A / 50mA (Typ.) Complementary part with TSB1424A

Contextual Info: UTC TIP112 NPN EPITAXIAL PLANAR TRANSISTOR NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR FEATURES * High DC Current Gain : hFE = 1000 @VCE=4V, Ic=1A Min * Low Collector-Emitter Saturation Voltage * Industrial Use EQUIVALENT TEST (R1≅10kΩ, R2≅0.6Ω)

SMD-16A

Abstract: SDC09 SMD16A TRANSISTOR SMD 1a 9 power transistor array
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

TRANSISTOR SMD 1a 9

Abstract: SDC09 smd transistor 142 SMD-16A
Contextual Info: Surface-mount Power Transistor Array SDC09 ICBO IEBO VCEO hFE VCE sat VFEC Es/b Test Conditions VCB = 60V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.5A, IB = 15mA IFEC = 6A L = 10mH, single pulse Ratings 10max 10max 60 to 70 400 to 1500 0.15max 1.5max 80min

DFN3020

Contextual Info: A Product Line of Diodes Incorporated ZXTC6720MC DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION Features and Benefits Mechanical Data NPN Transistor • BVCEO > 80V • IC = 3.5A Continuous Collector Current • Low Saturation Voltage 185mV max @ 1A

TS16949

Abstract: ZXTN07012EFF ZXTP07012EFF ZXTP07012EFFTA 2V150
Contextual Info: ZXTP07012EFF 12V, SOT23F, PNP medium power transistor Summary; BVCEO > -12V IC cont = -4A VCE(sat) < -75mV @ 1A RCE(sat) = 50m⍀ PD = 1.5W Complementary part number ZXTN07012EFF Description C This low voltage PNP transistor has been designed for applications

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SD1898 PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES *High VCEO= 80V *High IC= 1A DC *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD1898L-x-AB3-R

M57917L

Abstract: sinewave inverter QM50DY "MITSUBISHI HYBRID" QM10
Contextual Info: MITSUBISHI HYBRID ICs M57917L HYBRID IC FOR DRIVING TRANSISTOR MODULES M57917L is a Hybrid Integrated Circuit designed for driving Transistor Modules QM10XX, QM20XX, etc., in an Inverter application. This device operates as an isolation amplifier for Transistor Modules due

Contextual Info: Surface-mount Power Transistor Array SPF0001 Tj Tstg Electrical Characteristics Ta=25ºC Unit V V V A A W ºC ºC Symbol Test Conditions ICBO IEBO VCEO hFE VCE (sat) VFEC Es/b VCB = 105V VEB = 6V IC = 50mA VCE = 1V, IC = 1A IC = 1.2A, IB = 12mA I FEC = 6A

2SA1797

Abstract: 2SA1797G
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SA1797 PNP SILICON TRANSISTOR POWER TRANSISTOR „ FEATURES * Low Saturation Voltage. VCE SAT =-0.35V(Max) at IC / IB=-1A / -50mA * Excellent DC Current Gain Characteristics „ ORDERING INFORMATION Normal 2SA1797-x-AA3-R 2SA1797-x-AB3-R