TRANSISTOR IC 1557 B Search Results

1557 b transistor

Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Contextual Info: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s

transistor d 1557

Abstract: transistor 1558 transistor IC 1557 b germanium transistor ac 128 ML 1557 b transistor 1557 b transistor af280 Q62701-F88 900 mhz germanium diode AF 280 S
Contextual Info: 25C » • fi235bOS GG04QÔ1 S « S I E G PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “7 ^ fo r m ix e r and o s c illa to r c ir c u its up to 9 0 0 M H z 3 - / - 0 7 A F 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package sim ilar to T 0 119. This transistor is particularly

Contextual Info: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature

transistor D 1557

Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Contextual Info: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly

r58 ah16

Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Contextual Info: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's

transistor MW 882

Abstract: transistor for RF amplifier and mixer uhf range fm modulator N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOS wireless lcd receiver Philips 787 receiver transistor for RF amplifier audio compandor IC mos transistor ecl prescaler
Contextual Info: Philips Semiconductors Semiconductors for Wireless Ä Communications , , Index Types added to the range since the last issue of handbook IC17 1997 are shown in bold print PAGE 80CL580/83CL530 Low-voltage 8-bit microcontrollers with UART, l2C-bus and ADC

TRANSISTOR 187

Abstract: RADIO fm RECEIVER IC UHF transistor MW 882 IC 740 1ghz fm modulator cellular phone amplifier power control transistor 4w TRANSISTOR BTL POWER AMPLIFIER transistor 846 audio compandor IC transistor for RF amplifier and mixer
Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications Index Types added to the range since the last issue of handbook IC17 1997 are shown in bold print PAGE I2C-bus and ADC 96 80CL580/83CL580 Low-voltage 8-bit microcontrollers with UART, 83CL781/83CL782

transistor d 1557

Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Contextual Info: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.

M74 marking

Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg
Contextual Info: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.

transistor 647

Abstract: amplifier TRANSISTOR 14 GHZ transistor for RF amplifier and mixer amplifier TRANSISTOR 12 GHZ audio compandor IC audio ic 1026 line AMPLIFIER satellite philips dect 1331 transistor sa636
Contextual Info: Philips Semiconductors Semiconductors for Wireless Communications Funchonal mdex Types added to the range since the last issue of handbook IC17 1997 are shown in bold print PAGE Front-ends SA601 1GHz low voltage LNA and mixer 886 SA602A Double-balanced mixer and oscillator

Contextual Info: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth

basic circuit diagram of AC servo motor

Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram
Contextual Info: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage

Contextual Info: NSL12TT1 High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com 12 VOLTS 1.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS (TA = 25°C) Symbol Max Unit Collector-Emitter Voltage VCEO −12 Vdc Collector-Base Voltage

2SC1541

Abstract: transistor 1548 b 4500cm
Contextual Info: - 5 - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English

smd transistor 6c

Contextual Info: SflE D 312^357 □ □ □ 2 5 tiö TTT B E L A EN2016 â b fltK EN2016 F asi QuadNPN A rray äm äB äw äsR M B . 'M3-ZS ELANTEC INC F eatu res G eneral D escrip tion • • • • • T he EN2016 fam ily are quad m onolithic vertical N P N tran sis­

EN2016ACN

Abstract: tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CJ EN2016CM EN2016CN MPQ3904
Contextual Info: ELANTEC INC MIE J> S 312^557 0001757 = ES EL A EN2016/E N 2016A _ _ . 2 .5 Fast QuadNPN A rray ; HIGH PERFORMANCEANALOGINTEGRATEDCIRCUITS H 2 tss o h-* Ci s F eatures G eneral D escription • • • • • The EN2016 family are quad monolithic vertical N P N transis­

trw RF POWER TRANSISTOR

Abstract: amplitude modulator gilbert cell DCS1800 RF2422 quadrature modulation two front end
Contextual Info: TA0007  TA0007 Systems RF2422: A Direct Quadrature Modulator for 0.9GHz to 2.5GHz Wireless $ 'LUHFW 4XDGUDWXUH 0RGXODWRU IRU *+] WR *+] :LUHOHVV 6\VWHPV ,QWURGXFWLRQ As wireless system designs have moved from carrier frequencies at approximately 900MHz to wider bandwidth applications like Personal Communication System PCS phones at 1.8GHz and wireless local area

Contextual Info: EL2160C F eatu res G eneral D escrip tion • 130 M Hz 3 dB bandwidth Ay = + 2 • 180 M Hz 3 dB bandwidth (AV = + 1 ) • 0.01% differential gain, R l = 500ft • 0.01° differential phase, R l = 500ft • Low supply current, 8.5 mA • Wide supply range, ± 2V to ± 15V

Contextual Info: la n t e c HiGH PERFORMANCE ANALOG INTEGRATED CIRCUITS EL2243C é EL2243C Dual Fast Single-Supply Decompensated Op Amp F e a tu r e s G e n e ra l D e s c rip tio n • Inputs and outputs operate at negative supply rail • Gain bandwidth product—70 MHz

04ti

Contextual Info: EL2260C/EL2460C to r D ual 'Quad/'JO M fh t'urrrnt f'rtd b a ck 1m plifivrs HIGHPERFORMSNCEANAIOS INTEGRATEDCfflCUrTS F e a tu r e s G en era l D e sc r ip tio n • 130 MHz 3 dB bandwidth Av = + 2 • 180 M Hz 3 dB bandwidth (Av = + 1 ) • 0.01% differential gain,

PT8740

Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72

Contextual Info: la n t e c NIGH PERFORMANCE ANAUOG INTEGRATED CIRCUITS EL2002C Low Power, 180 MHz Buffer Am plifier F e a tu r e s G e n e ra l D e s c rip tio n • • • • • • • • • • The EL2002 is a low cost monolithic, high slew rate, buffer amplifier. B uilt using the Elantec monolithic Complementary

KTC transformer

Abstract: 50V ELNA Electrolytic capacitor elna 50v M113 SD2918 TSD2918 mallory tt TRANSISTOR 8073 mallory tbs 2643801OOZ
Contextual Info: SD2918 RF POWER TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETs ADVANCE DATA . GOLD METALLIZATION . EXCELLENT THERMAL STABILITY . COMMON SOURCE CONFIGURATION . P o u t = 30 W MIN. WITH 18 dB GAIN @ 30 MHz DESCRIPTION The SD2918 is a gold metallized N-Channel MOS

Contextual Info: ELANTEC MIE D INC E3 312^557 G001757 T El ELA Fast QuadNPN Arrau H IGH P E R FO R M A N C E A N A LO G IN TEG R ATED CIRCUITS "T:cV ?> • 2 ,S F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N PN transis­