TRANSISTOR IC 12A Search Results

2SB828

Abstract: 2SD1064
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB828 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1064

2SB826

Abstract: 2SD1062
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB826 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Wide Area of Safe Operation ·Complement to Type 2SD1062

STD123ASF

Contextual Info: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information

2SA1600

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1600 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = -40(V)(Min.) ·Low Collector Saturation Voltage :VCE(sat)= -0.3(V)(Max.)@IC= -6A ·Large Current Capability-IC= -12A

Contextual Info: STD123ASF Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information

2sd2083

Abstract: transistor 2sd2083 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

2sd2083

Abstract: 2sb1383
Contextual Info: 2SD2083 Silicon NPN Triple Diffused Planar Transistor Complement to type 2SB1383 IEBO VEB=6V 10max mA 6 V V(BR)CEO 25(Pulse40) A hFE IC=25mA 120min VCE=4V, IC=12A 2000min V 2 A VCE(sat) IC=12A, IB=24mA 1.8max PC 120(Tc=25°C) W VBE(sat) IC=12A, IB=24mA 2.5max

STD123AS

Contextual Info: STD123AS Semiconductor NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. Ordering Information

Contextual Info: STD123AS Semiconductor NPN Silicon Transistor Features • • • • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. Ordering Information

2SB903

Abstract: 2SD1212
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB903 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -5A ·Complement to Type 2SD1212 APPLICATIONS ·Designed for relay drivers, high-speed inverters, converters,

darlington transistor C 3300

Abstract: BDX65 BDX65A BDX65B bdx65c transistor Audio Output Transistor Amplifier BDX65C BDX64* darlington bdx64
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDX64/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier

2SC5526

Abstract: SWITCHING TRANSISTOR 60V 2SA2007 transistor A6A
Contextual Info: 2SA2007 High-speed Switching Transistor -60V-12A 2SA2007 •External dimensions (Units : mm) •Features 1) High switching speed. (Typ. tf=0.15,us at Ic= -6A) 2) Low saturation voltage. (Typ. VcE(sat)= -0 .2 V at Ic / Ib = -6 A / -0.3A )

BDT65AF

Abstract: Audio Output Transistor Amplifier BDT65A BDT65BF npn DARLINGTON 10A BDT65CF BDT65F BDT65C NPN high power transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •Collector Current -IC= 12A ·High DC Current Gain-hFE= 1000 Min @ IC= 5A ·Complement to Type BDT64F/AF/BF/CF APPLICATIONS ·Designed for audio output stages and general purpose

Contextual Info: Power Transistor 2SA1567 Test Conditions VCB = –50V VEB = –6V IC = –25mA VCE = –1V, IC = –6A IC = –6A, IB = –0.3A VCE = –12V, IE = –0.5A VCB = –10V, f = 1MHz ICBO IEBO V BR CEO hFE VCE (sat) fT COB Ratings –100max –100max –50min

STD123ASF

Contextual Info: STD123ASF NPN Silicon Transistor Features • High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA • Suitable for large current drive directly. • Application for IRED Drive transistor in remote transmitter. PIN Connection 3 1 2 SOT-23F Ordering Information

STD123AS

Contextual Info: STD123AS NPN Silicon Transistor PIN Connection Features High β& low saturation transistor. hFE=400 Min. @VCE=1V, Ic=100mA Suitable for large current drive directly. Application for IRED Drive transistor in remote transmitter. 2 1 • • • • SOT-23 Ordering Information

irg7ic

Abstract: transistor IC 12A 400v IRG7
Contextual Info: IRG7IC20FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 8.0A, TC = 100°C tsc > 3 s, Tjmax = 150°C G VCE on typ. = 1.60V @ IC = 12A G E • • • • Air Conditioner Compressor Refrigerator Vacuum Cleaner

Contextual Info: AP20GT60ASI-HF RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR Features High Speed Switching Low Saturation Voltage VCE sat ,typ.=1.7V@IC=12A RoHS Compliant Product G CE VCES 600V IC 12A TO-220CFM(I) C G

2SA2007

Abstract: 2SC5526
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage. (Typ. VCE(sat) = 0.15V at IC / IB = 6A / 0.3A) 2) High switching speed. (Typ. tf = 0.1µs at Ic = 6A) 3) Wide SOA. (safe operating area)

2SB922

Abstract: 2SD1238
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB922 DESCRIPTION •High Collector Current: IC= -12A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -6A ·Complement to Type 2SD1238 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

2sd1240

Abstract: 2SB924
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB924 DESCRIPTION •High Collector Current: IC= -25A ·Low Collector Saturation Voltage : VCE sat = -0.5V(Max)@IC= -12A ·Complement to Type 2SD1240 APPLICATIONS ·Designed for large current switching of relay drivers, highspeed inverters, converters applications.

Contextual Info: Advanced Power Electronics Corp. AP20GT60ASI-HF-3 N-Channel Insulated Gate Bipolar Power Transistor High Speed Switching Low Saturation Voltage Typical V CE sat = 1.7V at IC=12A VCES 600V IC 20A Isolated tab G Industry-standard isolated package C C RoHS-compliant, halogen-free

2SA2007

Abstract: 2SC552 2SC5526
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 !External dimensions (Units: mm) !Features 1) Low saturation voltage, typically VCE(sat) = 0.15V at IC / IB = 6A / 0.3A. 2) High switching speed, typically tf = 0.1µs at Ic =6A. 3) Wide SOA. (safe operating area)

SWITCHING TRANSISTOR 60V

Abstract: 2SC5526 6a10 6A10 DC 2SA2007 TO-220FN
Contextual Info: 2SC5526 Transistors High-speed Switching Transistor 60V, 12A 2SC5526 •External dimensions (Units: mm) •Features 1) Low saturation voltage, typically VcE<sat)=0.15V at Ic / Ib = 6A / 0.3A. 2) High switching speed, typically tf=0.1 (is at Ic =6A. 3) Wide SOA. (safe operating area)