TRANSISTOR HANDLING 2A Search Results

ZXTP19100CG

Abstract: ZXTP19100C TS16949 ZXTN19100CG ZXTP19100CGTA 30W dc motor current driver
Contextual Info: ZXTP19100CG 100V PNP medium transistor in SOT223 Summary BVCEO > -100V BVECO > -7V IC cont = 2A VCE(sat) < -130mV @ -1A RCE(sat) = 100m⍀ PD = 3.0W Complementary part number ZXTN19100CG Description C Packaged in the SOT223 outline this new low saturation PNP transistor

Contextual Info: B U R R -B R O W N OPA544 • E 3 B B High-Voltage, High-Current OPERATIONAL AMPLIFIER FEATURES DESCRIPTION • HIGH OUTPUT CURRENT: 2A min • WIDE POWER SUPPLY RANGE: ±10 to ±35V • SLEW RATE: 8V/^ls • INTERNAL CURRENT LIMIT • THERMAL SHUTDOWN PROTECTION

2SC4737

Abstract: ITR07514 ITR07515 ITR07516 ITR07517
Contextual Info: Ordering number:ENN3880A NPN Epitaxial Planar Silicon Transistor 2SC4737 50V/2A Driver Applications Applications Package Dimensions • Suitable for use in switching of L load motor drivers, printer hammer drivers, relay drivers . unit:mm 2084B [2SC4737] Features

Contextual Info: OPA544 Or, Call Custom Service at 1-800-548-6132 USA Only FEATURES DESCRIPTION • HIGH OUTPUT CURRENT: 2A min The OPA544 is a high-voltage/high-current opera­ tional amplifier suitable for driving a wide variety of high power loads. High performance FET op amp

2SB1495

Abstract: 2SD2257
Contextual Info: TO SH IBA 2SB1495 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S B 1 495 Unit in mm HIGH POWER SWITCHING APPLICATIONS • • • High DC Current Gain : hFE = 2000 Min. (VCE= _ 2 V , Ic = -2A ) Low Saturation Voltage : VCE (sa t)= -l-5 V (MAX.) (IC= -1 .5 A )

TCD5251

Abstract: TCD5251BD TCD5251B
Contextual Info: TCD5251BD GENERAL TCD5251BD is an interline CCD area image sensor developed for a PAL/SECAM system Color television camera. This device has signal pixels of 514 horizontal x 579 (vertical), and its image size agrees with 1/3 inch type optical system. This device offers high sensitivity and low smearing, and

D45H1B

Abstract: L-033 regulator
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP D45H1B D45H1B transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage V C e o = 10V Min * High Current Power Transistors

TS16949

Abstract: ZXTN2018F ZXTP2027F ZXTP2027FTA
Contextual Info: ZXTP2027F 60V, SOT23, PNP medium power transistor Summary V BR CEV > -100V, V(BR)CEO > -60V IC(cont) = -4A RCE(sat) = 31 m⍀ typical VCE(sat) < -60 mV @ -1A PD = 1.2W Complementary part number ZXTN2018F Description C Advanced process capability and package design have been used to

ZXTP25020CFH

Abstract: TS16949 ZXTN25020CFH ZXTP25020CFHTA
Contextual Info: ZXTP25020CFH 20V, SOT23, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4A RCE(sat) = 34m⍀ VCE(sat) < -55mV @ 1A PD = 1.25W Complementary part number ZXTN25020CFH Description C Advanced process capability and package design have been used to

Contextual Info: ANALOG DEVICES Low Power, Programmable Temperature Controller □ TM P01* FEATURES -55°C to +125”C -6 7 “F to +257°F Operation ±0.5°C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points

j5304d

Contextual Info: FJD5304D High Voltage Fast Switching Transistor Features • • • • Built-in Free Wheeling Diode Wide Safe Operating Area Small Variance in Storage Time Suitable for Electronic Ballast Application Equivalent Circuit C B D-PACK 1 1. Base 2. Collector 3. Emitter

8-pin optoisolator

Abstract: IRGBC Precision triac control thermostat equivalent transistor 2N1711 IL300XC TMP01F TMP01 TMP01EP TIP 43c transistor TMP01FJ
Contextual Info: a FEATURES –55؇C to +125؇C –67؇F to +257؇F Operation ؎1.0؇C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis 20 mA Open Collector Trip Point Outputs TTL/CMOS Compatible

Contextual Info: ANALOG DEVICES FEATURES —55°C to +150°C —60°F to +300°F Operation ±0.5°C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points User Programmable Hysteresis 20 mA Open Collector Trip Point Outputs

irfp460 dc welding circuit diagram

Abstract: irfp450 mosfet full bridge ZVT Full bridge transformer IGBT IGBT ZVT Full bridge lossless passive clamp flyback converter ZVT full bridge for welding irfp450 mosfet full bridge pwm 47N60S5 AN-CoolMOS-02 siemens rectifier pwm igbt
Contextual Info: Version 1.1 , June 2000 Application Note AN-CoolMOS-02 CoolMOS Selection Guide Author: Ilia Zverev, Jon Hancock Published by Infineon Technologies AG http://www.infineon.com Power Conversion N e v e r s t o p t h i n k i n g CoolMOS Selection Guide This selection guide shows the main application fields of CoolMOS transistors, answers

pk mur460

Abstract: MC1391P MUR460 PK 221D 2N5337 2N6191 MC7812 MJ11016 MJE16204 MJF16204
Contextual Info: MOTOROLA Order this document by MJE16204/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mrf1516

Abstract: MRF1512 wide band choke vk200 Unelco Metal Clad Micas AN211A motorola AN211A Transistor MRF151 UNELCO MICA CAPACITORS 1N5347 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MJE130

Abstract: 2N2222 NPN Transistor features 2N2905 equivalent 2N2905 MOTOROLA MJE13005-D 1N4933 1N5820 2N2222 2N2905 MJE13005
Contextual Info: MOTOROLA Order this document by MJE13005/D SEMICONDUCTOR TECHNICAL DATA MJE13005* Designer's  Data Sheet *Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high–voltage, high–speed power switching

Contextual Info: TPC8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π−MOSVI TPC8102 Lithium Ion Battery Applications Notebook PCs Portable Equipment Applications Unit: mm Small footprint due to small and thin package Low drain−source ON resistance : RDS (ON) = 34 mΩ (typ.)

Contextual Info: Low Power, Programmable Temperature Controller A N A LO G D E V IC E S TMP01* FEATURES -55°C to +125°C -67°F to +257°F Operation ±1.0°C Accuracy Over Temperature (typ) Temperature-Proportional Voltage Output User Programmable Temperature Trip Points

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General

DAC80-CBI-I

Contextual Info: OPA541 High Power Monolithic OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● POWER SUPPLIES TO ±40V ● MOTOR DRIVER ● OUTPUT CURRENT TO 10A PEAK ● PROGRAMMABLE CURRENT LIMIT ● SERVO AMPLIFIER ● SYNCHRO EXCITATION ● AUDIO AMPLIFIER ● INDUSTRY-STANDARD PIN OUT

vce 1200 and 5 amps npn transistor to 220 pack

Abstract: 221D MJE18004 MJE210 MJF18004 MPF930 MTP8P10 MUR105
Contextual Info: MOTOROLA Order this document by MJE18004/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet SWITCHMODE MJE18004 * MJF18004 * Designer's NPN Bipolar Power Transistor For Switching Power Supply Applications *Motorola Preferred Device POWER TRANSISTOR 5.0 AMPERES

ultrarf

Abstract: MRF19090
Contextual Info: UGF19090 90W, 1.9 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for PCS base station applications in the frequency band 1.93 to 1.99 GHz. Rated with a minimum output power of 90W, it is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier

IC 2030 schematic diagram

Abstract: MA737 Samsung Tantalum Capacitor 9430 mosfet si9430 ic stepping motor coil construction FZ749 FZ74 Step-Down, External PNP Saturated Switch 2030 ic 5 pins
Contextual Info: TC105 PFM/PWM Step-Down DC/DC Controller FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The TC105 is a step-down Buck switching controller that furnishes output currents of up to 1A (max) while delivering a typical efficiency of 92%. The TC105 normally