TRANSISTOR HANDLING 2A Search Results

RD70HVF1

Abstract: RD70HVF1-101 RD70HVF vhf power transistor 50W uhf power transistor 50W MITSUBISHI RF POWER MOS FET S 170 MOSFET TRANSISTOR RF Transistor s-parameter vhf 100OHM Rf power transistor mosfet
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

RD70HVF1

Abstract: uhf power transistor 50W RD70HVF RD70HVF1-101 High frequency P MOS FET transistor 010PF 175MHz70W 071J RF Transistor Selection 100OHM
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically

Transistor C G 774 6-1

Abstract: 100OHM RD45HMF1 Transistor C 1279
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

RD70HVF

Abstract: rd70 RD70HVF1 RD70HVF1-101 100OHM 071J 1695 GP 1
Contextual Info: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W DESCRIPTION OUTLINE RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

100OHM

Abstract: RD45HMF1 TRANSISTOR HANDLING 2A A 107 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

100OHM

Abstract: RD45HMF1
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

100OHM

Abstract: RD45HMF1 MOSFET "CURRENT source"
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD45HMF1 is a MOS FET type transistor specifically designed for 900MHz-band High power amplifiers

RD70HVF1

Abstract: RD70HVF transistor d 1710 S 170 MOSFET TRANSISTOR vhf power transistor 50W 100OHM 50w rf power transistor d 2095 transistor MOSFET 2095 transistor
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DESCRIPTION DRAWING 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

RD70HVF

Abstract: RD70HV vhf power transistor 50W 175MHz70W MOSFET 2095 transistor 50w rf power transistor 520-MHz
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD70HVF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor, 175MHz70W 520MHz,50W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 RD70HVF1 is a MOS FET type transistor specifically designed for VHF/UHF High power amplifiers

NPN Transistor VCEO 1000V

Abstract: transistor BUX81/9
Contextual Info: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and

marking RJA

Contextual Info: NSL12AW Product Preview High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications 12 VOLTS 3.0 AMPS PNP TRANSISTOR Features: • • • • http://onsemi.com High Current Capability (3 A) High Power Handling (Up to 650 mW)

Contextual Info: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse

ZXTP25020CFFTA

Abstract: TS16949 ZXTP25020CFF 079w marking 1F4
Contextual Info: ZXTP25020CFF 20V, SOT23F, PNP medium power transistor Summary BVCEO > -20V BVECO > -7V IC cont = -4.5A RCE(sat) = 41m⍀ VCE(sat) < -65mV @ 1A PD = 1.5W Description C Advanced process capability and packaging maximise the power handling and performance of this small outline transistor. The reverse

SOT89 52 10A

Abstract: design ideas FCX1051A FCX1051ATA FCX1151A TS16949
Contextual Info: FCX1051A SOT89 NPN medium power transistor Summary BVCEO > 40V IC cont = 3A VCE(sat) < 120mV @ 1A RCE(sat) = 57m⍀ PD = 2W Complimentary type - FCX1151A Description C An NPN low voltage, high gain bipolar transistor offering very low saturation voltage and excellent current handling in the SOT89

NSL12AW

Abstract: NSL12AWT1 NSL12AWT1G
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • 12 VOLTS 3.0 AMPS PNP TRANSISTOR High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A)

CEP02N6

Abstract: CEB02N6 transistor cep02n6
Contextual Info: CEP02N6/CEB02N6 Sep. 2002 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 2A , RDS ON =5Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

transistor D 1762

Abstract: transistor fet 1546 RF Transistor s-parameter
Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD45HMF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 900MHz,45W OUTLINE DRAWING DESCRIPTION 25.0+/-0.3 7.0+/-0.5 11.0+/-0.3 1 24.0+/-0.6 FEATURES 4-C2 •High power and High Gain:

marking GG

Abstract: marking code 604 SOT23
Contextual Info: NPN Silicon RF Transistor BFR 93P • For low -distortion broadband am plifiers up to 1 GHz at collector currents from 2 to 30 mA. c ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel Package

Contextual Info: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

CEP04N6

Abstract: 600V,4A DIODE
Contextual Info: CEP04N6/CEB04N6 Feb. 2003 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 4A , RDS ON =2.5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.

NSL12AWT1G

Contextual Info: NSL12AWT1G High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features • • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

Contextual Info: CED02N6/CEU02N6 Dec. 2002 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 600V , 1.9A , RDS ON =5 Ω @VGS=10V. Super high dense cell design for extremely low RDS(ON). 6 High power and current handling capability. TO-251 & TO-252 package.

marking PD

Abstract: NSL12AW NSL12AWT1
Contextual Info: NSL12AW High Current Surface Mount PNP Silicon Low VCE sat Transistor for Battery Operated Applications http://onsemi.com Features: • • • • High Current Capability (3 A) High Power Handling (Up to 650 mW) Low VCE(s) (170 mV Typical @ 1 A) Small Size

CEP703AL

Abstract: ceB703 10V Schottky Diode ceb703al
Contextual Info: CEP703ALS2/CEB703ALS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.