CEP7030L
Abstract: CEB7030L ceB703 c2025
Contextual Info: CEP7030L/CEB7030L N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 65A , RDS ON =8mΩ @VGS=10V. RDS(ON)=12m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability. TO-220 & TO-263 package.
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cep7030l/ceb7030lo-220o-263cep7030l+3ceb7030lceb703c2025
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cep7030L
Abstract: QG60 CEB7030L
Contextual Info: CEP7030L/CEB7030L N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 65A,RDS ON = 8mΩ @VGS = 10V. RDS(ON) = 12mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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cep7030l/ceb7030lo-220o-263cep7030l+2qg60ceb7030l
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TRANSISTOR cep703al
Abstract: CEP703AL ceb703al A3525 CEP703
Contextual Info: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.
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cep703al/ceb703altransistor cep703alcep703alceb703al+2a3525cep703
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CEP703AL
Abstract: TRANSISTOR cep703al
Contextual Info: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.
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cep703al/ceb703alo-220o-263cep703al+1transistor cep703al
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CEP703AL
Abstract: ceB703 10V Schottky Diode ceb703al
Contextual Info: CEP703ALS2/CEB703ALS2 PRELIMINARY N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES D 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handling capability.
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cep703als2/ceb703als2cep703als2/ceb703al2cep703alceb703+210v schottky diodeceb703al
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CEP703AL
Abstract: TRANSISTOR cep703al ceb703al
Contextual Info: CEP703AL/CEB703AL March 1998 4 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES 30V , 40A , RDS ON =17m Ω @VGS=10V. RDS(ON)=30m Ω @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). D High power and current handling capability.
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cep703al/ceb703alo-220o-263cep703al+2transistor cep703alceb703al
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CEP703AL
Abstract: TRANSISTOR cep703al B703A P4010 B703AL ceb703al P703 B703
Contextual Info: CEP703AL/CEB703AL March 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 4 0 A , R ds on =1 7mQ @V g s =1 0V. RDS(ON)=30mQ @ V g s =4.5V. • Super high dense cell design for extremely low R ds (on ). • High power and current handling capability.
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cep703al/ceb703alo-22qo-263to-263+10t0-220p703al/ceb703alcep703altransistor cep703alb703ap4010ceb703alp703b703
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B703A
Abstract: GS109 P703
Contextual Info: CEP703ALS2/CEB703ALS2 ELEC TR IC AL CHARACTERISTICS Tc=25°C unless otherwise noted Parameter Typ Max Unit Symbol Condition Min Drain-Source Breakdown Voltage BV dss V gSz OV, ID=250[i A 30 Zero Gate Voltage Drain Current Idss V ds =24V, Vgs =0V 10 [iA Gate-Body Leakage
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cep703al
Abstract: TRANSISTOR cep703al ceb703al CEP- 83 A
Contextual Info: CEP703AL/CEB703AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 40A,RDS ON = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.
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cep703al/ceb703alo-220o-263cep703al+3transistor cep703alceb703alcep- 83 a
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CEP50N06
Abstract: CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent CEF04N6 equivalent CEP63A3 CEP20N06 cep76139
Contextual Info: Contents Power Mosfet Selection Guide N CHANNEL Package Page SO-8 2 TO-251/TO-252 3 TO-220/TO-263 4-5 SOT-23 5 SOT-223 5 SOT-89 5 TSOP-6 5 TSSOP-8 6 TO-92 6 2928-8J 6 TO-220FM 6 P CHANNEL Package Page SO-8 7 TO-251/TO-252 7 TO-220/TO-263 8 SOT-23 8 SOT-223
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o-251/to-252o-220/to-263ot-23ot-223+13ot-892928-8jo-220fmcep50n06cep83a3 equivalentcep83a3cef02n6acep6355fqpf8n60c equivalentcef04n6 equivalentcep63a3cep20n06cep76139
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CEP7030L
Abstract: b703 CEB7030L B7030 p7030l
Contextual Info: JU N 1998 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES • 3 0 V , 6 5 A , Rds on>= 8m Q D @ V gs =10V. Rd s(o n = 12itiQ @ V gs =4.5V. • Super high dense cell design for extremely low R d s (o n ). • High power and current handling capability.
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tq-220o-263to-263t0-220+6cep7030l/ceb7030lcep7030lb703ceb7030lb7030p7030l
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