TRANSISTOR H 802 Search Results

2n6027

Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

SOT422A

Abstract: BLS3135-65
Contextual Info: DISCRETE SEMICONDUCTORS BITÂ SIH]H T BLS3135-65 Microwave power transistor P relim inary specification Philips Semiconductors 1999 A p r 28 PHILIPS Philips Semiconductors Preliminary specification Microwave power transistor BLS3135-65 PINNING - SOT422A FEATURES

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

transistor 1264-1

Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
Contextual Info: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.

TPCA8028-H

Abstract: TPCA8028
Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 20 nC (typ.)

TPCA*8023

Abstract: TPCA8023-H TPCA 8023 8023-h tpca8023h tpca8023 tpca 8023-h 8023h
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 5.0 nC (typ.)

TPCA8028-H

Abstract: TPCA8028
Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •

TPCA 8023

Abstract: tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

Contextual Info: T O SH IB A 2SA1802 TENTATIVE TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE 2 S A 1 802 STROBE FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. U nit in mm & 8 MAX. • Excellent h p g Linearity : h pE l = 200"-600 (V c e = —2V, I(j = —0.5A)

CZT5401

Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.

CZT5551

Contextual Info: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.

TPCA 8023

Abstract: TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

TPCA 8023

Abstract: tpca 8023-h TPCA8023-H TPCA 8023 h
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package

TPCA8020-H

Abstract: toshiba ccfl inverter
Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1

bfw16a philips

Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Contextual Info: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFY90 PHILIPS

Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

TPCA8020-H

Abstract: 020NC
Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications 1.27 0.5±0.1

TPCA8020-H

Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm 1.27 0.5±0.1 Portable Equipment Applications CCFL Inverter Applications

TRANSISTOR P3

Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
Contextual Info: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •

M803

Contextual Info: UMG6N/FMG6A / T ransistors UMG6N FMG6A — =£— Jl> K h ' 7 > v i iX if/D ua l Mini-Mold Transistor I t N P N y 'J u 's h v > v x ^ r Epitaxial Planar NPN Silicon Transistor 'f > /< — $ K 7 < A /In v e rte r Driver • i+ ffi^ tÜ S /D im e n s io n s U n it: mm

TPCA8021-H

Abstract: 8021-H
Contextual Info: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •