TRANSISTOR H 802 Search Results

2n6027

Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

TPCA8028-H

Abstract: TPCA8028
Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 20 nC (typ.)

TPCA*8023

Abstract: TPCA8023-H TPCA 8023 8023-h tpca8023h tpca8023 tpca 8023-h 8023h
Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 5.0 nC (typ.)

TPCA8028-H

Abstract: TPCA8028
Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •

CZT5401

Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.

CZT5551

Contextual Info: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.

TPCA8020-H

Abstract: toshiba ccfl inverter
Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1

bfw16a philips

Abstract: BFW16A transistor bfw16a LB1936 vk200 philips bfw16a philips semiconductor ic 1014b Transistor D 798 transistor bq 17 1014b
Contextual Info: Philips Semiconductors Product specification T— 31— 17 NPN 1 GHz wideband transistor BFW16A SbE J> PHILIPS INTERNATIONAL 004L0n DESCRIPTIO N T32 • P H I N PINNING NPN transistor in a SOT5 TO-39 metal envelope, with the collector connected to the case.

BFY90 PHILIPS

Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

TPCA8020-H

Abstract: 020NC
Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications 1.27 0.5±0.1

TRANSISTOR P3

Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
Contextual Info: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in

TPCA8022-H

Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •

transistor NEC D 587

Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS

TPCA8021-H

Contextual Info: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 Small gate charge: QSW = 6.9 nC (typ.)

LT 5251

Abstract: 2s87 a1t transistor TRANSISTOR A1t Y500200 t430 transistor transistor bc 541 5251 F ic T440 2SB564
Contextual Info: SEC j Silicon Transistor 2SB564 P N P X t" 2 * -> 7 J U fi '> 'J □ > h =y > v 7- H PNP Silicon Epitaxial Transistor Audio Frequency Power Amplifier o { S M M n i± f m y ^ B / P A C K A G E D IM EN SIO N S * Unit : mm ¿ 7 - fc.y v t , 0 2 S D 4 7 1 1 ^ > 7 °') * >

on 5295 transistor

Abstract: fr91a BFR91A transistor bfr91a to92 fr91a TO-92 BFR91A 993 395 pnp npn transistor ai 757 TRANSISTOR fr91a NPN/TRANSISTOR 187
Contextual Info: Philips Sem iconductors JZ - 3 /- I Z Product specification - ^ NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL BFR91A 711Dfl2b D L m 5 7 C H 5bE 57 B • P H IN PINNING FEATURES DESCRIPTION PIN • Low noise • Low intermodulation distortion • High power gain

613 GB 123 CT

Abstract: transistor NEC D 587 Ic D 1708 ag 513 gb 173 ct MPA80 nec d 882 p transistor ic nec 2051 transistor NEC D 882 p NEC 2561 h NEC 2561 de
Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA803T NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD /xPA803T has b u ilt-in 2 tra n s is to rs w h ic h w e re d e v e lo p e d fo r UHF. PACKAGE DRAW INGS (U n it: m m ) FEATURES • H igh fT

8027h

Abstract: TPCA8027-H
Contextual Info: TPCA8027-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSⅢ TPCA8027-H Switching Regulator Applications Motor Drive Applications Unit: mm High-speed switching • Small gate charge: QSW = 8.1 nC (typ.) • Low drain-source ON-resistance: RDS (ON) = 8.0 mΩ (typ.)

Contextual Info: 2SA1802 TO SH IBA TOSHIBA TRANSISTOR STROBE FLASH APPLICATIONS SILICON PNP EPITAXIAL TYPE 2 S A 1 802 Unit in mm A MEDIUM POWER AMPLIFIER APPLICATIONS 6.8MAX., < 0.6M AX. -tf- 5.2 ±0 .2 rll • Excellent hjpg Linearity • h -n n • * * rH i • •

Transistor 78 L 05

Contextual Info: P h ilip s Sem ico n d u cto rs b b S B IB l 0031556 036 • APX Product sp ecifica tio n BFQ34 NPN 4 GHz wideband transistor N AUER PHILIPS/DISCRETE fe.'lE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SO T 122A envelope with a ceramic cap. All leads are isolated

BFG96

Abstract: TRANSISTOR P3 1351 NPN TRANSISTOR BFG32 V 904 RL 805 transistor SOT103 bfg96 scattering 803 0863 FP 801 h a 431 transistor
Contextual Info: -7- ^ P h ilip s S em icon du ctors ^ /-rZ -g Product sp ecification BFG96 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL D E S C R IP T IO N N P N transistor in a 4-lead dual-em itter plastic S O T 1 0 3 envelope. It is designed for application in w ideband am plifiers, such a s M A T V

transistor f420

Abstract: transistor BJ 115 F420 transistor t514 TRANSISTOR ZT 5551 2SK67A transistor bt 667 TCA561 2S30 T010
Contextual Info: NEC j m^Tiytn A Junction Field Effect Transistor 2SK67A E C M 4 > tf- ? > X N-Channel Silicon Ju n ctio n Field Effect Transistor ECM Im pedance C onverter W-mm/ P A C K A G E D IM E N S IO N S o M 'm m t T t o Unit : mm t ItMMTto OECM-i > o Y - h 2 .9 ± 0.2