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    TRANSISTOR H 802 Search Results

    TRANSISTOR H 802 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    BLA1011-2
    Rochester Electronics LLC Avionics LDMOS transistor PDF Buy
    RX1214B300YI
    Rochester Electronics LLC RX1214B300Y - Microwave Power Transistor PDF Buy
    CA3127MZ
    Rochester Electronics LLC CA3127 - Transistor Array PDF Buy
    RX1214B130YI
    Rochester Electronics LLC NPN microwave power transistor PDF Buy
    MX0912B251Y
    Rochester Electronics LLC NPN microwave power transistor PDF Buy

    TRANSISTOR H 802 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n6027

    Abstract: PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note
    Contextual Info: 2N6027, 2N6028 Preferred Device Programmable Unijunction Transistor Programmable Unijunction Transistor Triggers http://onsemi.com Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting


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    2N6027, 2N6028 2N6027/D 2n6027 PUT 2N6027 pin diagram PUT 2N6027 2N6027G equivalent transistor of 2n6027 transistor 2n6027 with circuit diagram PUT 2N6027/2N6028 2n5270 2N6028 unijunction application note PDF

    LA 7693

    Abstract: ic CD 4047 7737 transistor
    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain


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    2SC5014 2SC5014-T1 2SC5014-T2 LA 7693 ic CD 4047 7737 transistor PDF

    TRANSISTOR GB 558

    Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •


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    2SC5013 2SC5013-T1 2SC5013-T2 TRANSISTOR GB 558 PDF

    transistor 1264-1

    Abstract: bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801
    Contextual Info: Philips Semiconductors IH ^ 53*131 GG3 1 2 2 2 13T H A P X ^^^Productspecification NPN 5 GHz wideband transistor “ 1 £ N DESCRIPTION A ME R BFG90A P H IL IP S /D IS C R E T E b 'I E D PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope.


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    BFG90A OT103 OT103. transistor 1264-1 bfg90a transistor npn d 2058 BFG90 transistor J 4081 FP 801 PDF

    TPCA8028-H

    Abstract: TPCA8028
    Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 20 nC (typ.)


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    TPCA8028-H TPCA8028-H TPCA8028 PDF

    TPCA*8023

    Abstract: TPCA8023-H TPCA 8023 8023-h tpca8023h tpca8023 tpca 8023-h 8023h
    Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications High-speed switching • Small gate charge: QSW = 5.0 nC (typ.)


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    TPCA8023-H TPCA*8023 TPCA8023-H TPCA 8023 8023-h tpca8023h tpca8023 tpca 8023-h 8023h PDF

    TPCA8028-H

    Abstract: TPCA8028
    Contextual Info: TPCA8028-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅥ-H TPCA8028-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 • High-speed switching •


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    TPCA8028-H TPCA8028-H TPCA8028 PDF

    TPCA 8023

    Abstract: tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H
    Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package


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    TPCA8023-H TPCA 8023 tpca 8023-h TPCA 8023 h tpca8023h TPCA8023-H PDF

    CZT5401

    Contextual Info: CZT5401 PNP Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5401 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 4 0 1 Date Code B C E Min.


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    CZT5401 OT-223 CZT5401 -10mA -50mA -10mA -50mA PDF

    CZT5551

    Contextual Info: CZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The CZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.


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    CZT5551 OT-223 CZT5551 100MHz 01-Jun-2004 PDF

    TPCA 8023

    Abstract: TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023
    Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package


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    TPCA8023-H TPCA 8023 TPCA8023-H TPCA 8023 h 8023h TPCA*8023 tpca8023 PDF

    TPCA 8023

    Abstract: tpca 8023-h TPCA8023-H TPCA 8023 h
    Contextual Info: TPCA8023-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type U-MOSⅤ-H TPCA8023-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 0.4±0.1 1.27 0.5±0.1 Small footprint due to a small and thin package


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    TPCA8023-H TPCA 8023 tpca 8023-h TPCA8023-H TPCA 8023 h PDF

    PZT5551

    Contextual Info: PZT5551 NPN Transistor Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product SOT-223 Description The PZT5551 is designed for general purpose applications requiring high breakdown voltages. REF. A C D E I H 5 5 51 Date Code B C E Min.


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    PZT5551 OT-223 PZT5551 100MHz 01-Jun-2002 PDF

    TPCA8020-H

    Abstract: toshiba ccfl inverter
    Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications CCFL Inverter Applications Unit: mm 0.4±0.1


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    TPCA8020-H TPCA8020-H toshiba ccfl inverter PDF

    BFY90 PHILIPS

    Abstract: BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire
    Contextual Info: P hilips Sem iconductors Product specification NPN 1 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE BFY90 T> 713.0a2b Dü4ti04S D24 • P H IN PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the


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    BFY90 711002b 004bD4^ MBA383 BFY90 PHILIPS BFY90 ic 1014b PHILIPS WIDE BAND AMPLIFIERS 3I15 enamelled copper wire PDF

    TPCA8020-H

    Abstract: 020NC
    Contextual Info: TPCA8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications CCFL Inverter Applications 1.27 0.5±0.1


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    TPCA8020-H TPCA8020-H 020NC PDF

    TRANSISTOR P3

    Abstract: 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393
    Contextual Info: Product specification Philips Semiconductors T NPN 6 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION SbE D • 7 - , ^ BFG91A 711DS2b 0DHS1S2 S1G « P H I N PINNING NPN transistor in a 4-lead dual-emitter plastic SOT 103 envelope. PIN It is designed for application in


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    BFG91A 7110fi2b OT103. TRANSISTOR P3 4 pin dual-emitter bs 88 max zs values FP 801 BFG91A UBB330 0507 transistor 45194 transistor C 2290 transistor 4393 PDF

    TPCA8022-H

    Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •


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    TPCA8022-H TPCA8022-H PDF

    TPCA8021-H

    Abstract: 8021-H
    Contextual Info: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High Efficiency DC/DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications 0.4±0.1 1.27 0.5±0.1 High speed switching


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    TPCA8021-H TPCA8021-H 8021-H PDF

    TPCA8022-H

    Contextual Info: TPCA8022-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8022-H Switching Regulator Applications Motor Drive Applications DC/DC Converter Applications 6.0±0.3 Small footprint due to a small and thin package •


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    TPCA8022-H TPCA8022-H PDF

    402P

    Contextual Info: DIONICS INC. 6 5 R U S H M O R E S T ., W E S T B U R Y , N Y 11590 5 1 6 » 9 9 7 *7 4 7 4 HIGH VOLTAGE SILICON PNP TRANSISTOR ARRAYS Dl 402P fÿl The Dionics Dl 402P, Dl 602P and Dl 802P Series of High Voltage PNP Transistor arrays are specifically designed for plasma


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    100MHZ 402P PDF

    transistor NEC D 587

    Abstract: LS 1691 BM UPA802T l 9143 NEC D 587
    Contextual Info: PRELIMINARY DATA SHEET SILICON TRANSISTOR uPA802T HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIALTRANSISTOR WITH BUILT-IN 2 ELEMENTS M INI MOLD T he/xP A 802T has b u ilt-in 2 1o w -v o It age tra n s is to rs w h ic h are d e sig ne d PACKAGE DRAWINGS


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    uPA802T 2SC4227) transistor NEC D 587 LS 1691 BM l 9143 NEC D 587 PDF

    TPCA8021-H

    Contextual Info: TPCA8021-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPCA8021-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Portable Equipment Applications Unit: mm 1.27 0.4 ± 0.1 Small gate charge: QSW = 6.9 nC (typ.)


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    TPCA8021-H 20lled TPCA8021-H PDF

    bfq34 application note

    Abstract: ON4497 BFQ34 sf 122 transistor
    Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a


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    DD31S5Ã BFQ34 OT122A ON4497) bfq34 application note ON4497 BFQ34 sf 122 transistor PDF