TRANSISTOR H 13A Search Results

TPC8024

Abstract: TPC8024-H
Contextual Info: TPC8024-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8024-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package

TPC8020

Abstract: TPC8020-H
Contextual Info: TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8020-H High-Efficiency DC/DC Converter Applications Notebook PC Applications Portable Equipment Applications • Small footprint due to a small and thin package

transistor vergleichsliste

Abstract: OC44 AD149 ASZ16 siemens transistor asy 27 AF124 ASZ15 GD241 transistor gc301 AC125F
Contextual Info: TRANSISTOR VERGLEICHSLISTE Teil 1: G erm anium transistoren ra d io -television T ran sistorvergleichsliste T eil 1 : G erm anium transistoren TRANSISTOR V E R G L E I C H S LI S T E T eil 1: G erin an iu u itran sisto ren M IL IT Ä R V E R L A G D E R D E U T S C H E N D E M O K R A T IS C H E N

TPC8020

Abstract: TPC8020-H
Contextual Info: TPC8020-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Ultra-High-Speed U-MOSIII TPC8020-H High-Efficiency DC／DC Converter Applications Notebook PC Applications Unit: mm Portable Equipment Applications • Small footprint due to a small and thin package

Contextual Info: P D -9.1023 hïtemational H ü Rectifier IRGPC30F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: TO SHIBA TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC8007-H NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS SOP-8 LITHIUM ION BATTERY APPLICATIONS

Contextual Info: T O SH IB A TENTATIVE TPC8007-H TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE U -M O SII TPC80Q7-H LITHIUM ION BATTERY APPLICATIONS NOTE BOOK PC, PORTABLE EQUIPMENTS APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED AND HIGH EFFICIENCY DC-DC CONVERTERS

Contextual Info: Provisional Data Sheet No. PD - 9.1699 International IO R Rectifier ir f e h o JANTX2N6782U HEXFET TRANSISTOR JANTXV2N6782U [REF:MIL-PRF-19500/556] R E P E T IT IV E A V A LA N C H E A N D d v /d t R A TED N -C H A N N E L Product Summary 100V olt,0.60ii, HEXFET

Contextual Info: Provisional Data Sheet No. PD-9.1332B International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7260 IRHM8260 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 200Volt, 0.070Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r ’ s R A D H A R D te c h n o lo g y

Contextual Info: International pm a Hü Rectifier_ IRGMC50U INSULATED GATE BIPOLAR TRANSISTOR UltraFast™ IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Contextual Info: Provisional Data Sheet No. PD-9.1388A International l R Rectifier dv/dt R A TE D HEXFET TRANSISTOR IRFM260 R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L 200Volt, 0.060Q , H E X F E T H EX FET technology is the key to International Rectifier’s advanced line of power MO SFET tran­

Contextual Info: P D - 91740 International I R Rectifier R EPETITIVE AVALANCHE AND dv/dt RATED IRHNB7360SE HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 400Volt, 0.20Q, (SEE) RAD HARD HEXFET International R e ctifie r’s (SEE) RAD H AR D te c h n o l­

Contextual Info: P D - 91741 International I R Rectifier dv/dt HEXFET TRANSISTOR R EPETITIVE AVALANCHE AND RATED IRHNB7460SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET Product Summary International R e ctifie r’s (SEE) RAD H AR D te c h n o l­

Contextual Info: Provisional Data Sheet No. PD - 9.1701 International IOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 REPETITIVE AVALANCHE AND N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y

Contextual Info: bitemational H r Rectifier PD - 9.784A IRGB420U INSULATED GATE BIPOLAR TRANSISTOR UltraFast IGBT Features • Switching-loss rating includes all "tail" losses • Optimized for high operating frequency over 5kHz See Fig. 1 for Current vs. Frequency curve

Contextual Info: International ««•"« B H Rectifier_ IRGMC40F INSULATED GATE BIPOLAR TRANSISTOR Fast Speed IGBT Description Product Summary Insulated Gate Bipolar Transistors IGBTs from International Rectifier have higher current den­ sities than comparable bipolar transistors, while

Visil

Abstract: 100-P BUK101-50 BUK101-50DL T0220AB BUK101-500L
Contextual Info: b5E D PHILIPS INTERNATIONAL m 7110aEb DQfc.37^1 405 « P H I N Philips Semiconductors Product Specification PowerMOS transistor Logic level TOPFET_ DESCRIPTION Monolithic temperature and overload protected loaic level power MOSFET in a 3 pin plastic

transistor C456

Abstract: smd transistor NG c456 transistor
Contextual Info: Provisional Data Sheet No. PD - 9.885B International l ö R Rectifier IRHN9150 IRHN93150 R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR P-CHANNEL RAD HARD -100Volt, 0 .075^ , RAD HARD HEXFET International R e ctifie r’s P -C hannel RAD H AR D te c h ­

Contextual Info: Provisional Data Sheet No. PD - 9.1701 International IQR Rectifier dv/dt R A T E D HEXFET TRANSISTOR IRHM7Z60 IRHM8Z60 R E P E T IT IV E A V A L A N C H E A N D N -C H A N N E L MEGA RAD HARD 30 Vo It, 0.014Q, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’s R AD H AR D te c h n o lo g y

Contextual Info: Provisional Data Sheet No. PD - 9.1666A International IOR Rectifier irfei3o JANTX2N6796U HEXFET TRANSISTOR JANTXV2N6796U [REF:MIL-PRF-19500/557] R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D N -C H A N NE L Product Summary 100Volt, 0.18 ii, HEXFET

Contextual Info: ITH13C06 M ITEL High Frequency Powerline N-Channel IGBT SEMICONDUCTOR With Ultrafast Diode Supesedes March 1999, version DS5045-2.1 The IT H 1 3 C 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range

Contextual Info: Provisional Data Sheet No. PD - 9.1708 International TOR Rectifier dv/dt RATED HEXFET TRANSISTOR IRHNA7Z60 IRHNA8Z60 REPETITIVE AVALANCHE AND N-CHANNEL MEGA RAD HARD 30 Vo It, 0.009ft, MEGA RAD HARD HEXFET In te rn a tio n a l R e c tifie r’ s R A D H A R D te c h n o lo g y

transistor C892

Abstract: tsc 894 transistor c892 IRGPC50K O512
Contextual Info: International IM I Rectifier P D - 9.1034 IRGPC50K INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT Features • S h o rt c irc u it rated - 10ps @ 125°C , V qe = 15V • S w itc h in g -lo s s rating in clu d e s all "tail" losses • Optim ized for high operating frequency over 5kHz,

Contextual Info: PD - 9.1718A International IO R Rectifier IRFE330 R EPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6800U HEXFET TRANSISTOR JANTXV2N6800U [REF:MIL-PRF-19500/557] N -C H A N N E L Product Summary 400Volt, 1.0ft, HEXFET The leadless chip carrier LCC package represents