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    ITH13F06P

    Abstract: NC405C
    Contextual Info: MITEL ITH13F06 High Frequency Powerline N-Channel IGBT SEMICONDUCTOR Supsedes O ctober 1999, version DS4989-2.3 DS4989-3.0 May 1999 Key Parameters T h e IT H 1 3 F 0 6 is a v e ry r o b u s t n -c h a n n e l, e n h a n c e m e n t m ode in su la te d gate b ip o la r tra n s is to r


    OCR Scan     		ds4989-2ith13f06ds4989-3may1999+2ith13f06pnc405c PDF

    ITH13F06B

    Abstract: C25 diode ITH13F06
    Contextual Info: ITH13F06 M ITEL Powerline N-Channel IGBT S E M IC O N D U C T O R A dvance Inform ation DS4989-2.3 O ctober 1998 T h e IT H 1 3 F 0 6 is a v e ry ro b u s t n -c h a n n e l, enhancem ent mode insulated gate bipolar transistor IGBT designed for low power dissipation in a wide range


    OCR Scan     		ith13f06ds4989-2ith13f06bc25 diode PDF