TRANSISTOR GE 67 Search Results

ge-20 transistor

Abstract: ge-10 transistor transistor DJ marking transistor DJ 30 at GE Sensing Transistor GE 67 DJ marking DJ5GE GE-17 diagrams
Contextual Info: Proximity Sensors Inductive Nickel-plated Brass Housing Types DJ, M 14, PG 21 • Nickel-plated brass housing, cylindrical • Diameter: M 14, PG 21 • Sensing distance: 2 to 6 mm • Power supply: DJ 2 GE 24 VDC DJ 5 GE 24 VDC DJ 6 GE 10 to 40 VDC • Output: Transistor NPN, make switching

BFX60

Abstract: Transistor BFX 90 bfx 63 Q60206-X60
Contextual Info: N PISI-Transistor für H F-Verstärkerstufen BFX 60 BFX 60 ist ein epitaktischer NPN-Silizium-Planar-HF-Transistor im Gehäuse 18 A 4 DIN 41 876 T O -7 2 , jedoch mit abweichender Anschlußfolge. Die Anschlüsse sind vom Ge­ häuse elektrisch isoliert.

TRANSISTOR GB 558

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5013 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 10 G H z T Y P . •

2SC5012-T1

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5012 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES PACKAGE DIMENSIONS • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t ft- = 9 G H z T Y P . •

Contextual Info: PD -95597A IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast IGBT C • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, V GE = 15V

IRGPH40MD2

Abstract: C479
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V

IRGPH40MD2

Abstract: 930 18a C479
Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRGPH40MD2

Contextual Info: Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRG4BC30KD

Contextual Info: PD -95597 IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighter

IRGPH30MD2

Contextual Info: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

IRG4BC30KD

Contextual Info: PD -95597 IRG4IBC30KDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High switching speed optimized for up to 25kHz with low VCE on • Short Circuit Rating 10µs @ 125°C, V GE = 15V • Generation 4 IGBT design provides tighter

Contextual Info: International [^Rectifier Preliminary Data Sheet PD - 9.1118 IRGPH40MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT VCes = 1200V • Short circuit rated -10ps @ 12 5 °C , V GE = 15V • Switching-loss rating includes all "tail" losses

C478

Abstract: igbt socket IRGPH30MD2 irgph30
Contextual Info: Preliminary Data Sheet PD - 9.1115 IRGPH30MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

C943 transistor

Abstract: DI 944 c939 transistor transistor c939 transistor C938
Contextual Info: P D - 9.1081 International ^R ectifier IRGPC30KD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated UltraFast CoPack IGBT Features Vces = 600V • Short circuit rated -1 Ops @ 12 5 °C , V GE= 15V • Switching-loss rating includes all "tail" losses

IRGBC30KD2-S

Abstract: GC smd diode AN-994 SMD-220
Contextual Info: PD - 9.1142 IRGBC30KD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated UltraFast CoPack IGBT C • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • HEXFRED TM soft ultrafast diodes

1838t

Abstract: 1838 T D-10 IRGPH50MD2 C-483 C483 SE 135 N se 130 n
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1047A IRGPH50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 1200V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses

LA 7693

Abstract: ic CD 4047 7737 transistor
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC5014 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • S m a ll P acka ge • H igh G ain B a n d w id th P ro d u c t fr = 12 G H z T Y P . • Lo w N oise, H igh G ain

transistor c905

Abstract: igbt c905 IRGBC30KD2 C909 D-12 qe r 908
Contextual Info: International i«rJRectifier P D - 9.1107 IRGBC3ÖKD2 Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features c VcES = 6 0 0 V • Short circuit rated -1 Ops @125°C, V GE = 15V • Swiiching-loss rating includes ail "tail" tosses

VN66AK

Abstract: 99AK VN98AK VN66 VN35AK VN67AK VN99AK T0-205AD
Contextual Info: VN35AK Series G^MIF3°[MìS@ FUIT FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DM O S technology to achieve low on-resistance with excellent device ruggedness and reliability. This design has been optimized to give superior performance in

MRF9331

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor ‘ European Part Number . d e sign e d prim arily for u se in low p ow er am plifiers to 1 GHz. Ideal for p a ge rs and other battery operated sy ste m s w here low pow er c o n su m p tio n is critical.

3096E

Abstract: 3096ce 3096C rca CA3096 CA3096E RCA 3096AE CA3096E
Contextual Info: Arrays if! HARRIS S E M I C O N D U C T O R HARRIS RCA GE CA3096, CA3096A, CA3096C • IN T ER S IL M ay 1 9 9 0 N -P -N /P -N -P Transistor Array Five-Ind epend ent Transistors: Three n -p -n and Two p -n -p A pplications: ■ D ifferential A m plifiers ■ Lam p and Relay D rivers

2sa1757 transistor

Abstract: A1757 2SA series transistor ITT 108 2sa1757
Contextual Info: 2SA1757 Transistor, PNP Features Dimensions Units : mm • available In TO-220FP (SC-67) package • high speed switching, typically t{ = 0.15 jas at lc = - 3 A • low collector saturation voltage, typically VCE(sat) = -0.2 V at lC/ lB = -3 A/-0.15 A •

GE thyristor

Abstract: ge-2 transistor DR-6 GE DR6GE Transistor GE 67 ge-10 transistor proximity capactive sensor GE power SCR DR3GE Ge NPN
Contextual Info: Proximity Sensors Capacitive Steel Housing Types DR GE, M 14, PG 21, 13/8" • Steel housing, cylindrical • Diameter: M 14, PG 21, 1 3/8" • Sensing distance: 3 to 10 mm • Power supply: 10 to 27 VDC 90 to 240 VAC • LED-indication for output ON AC types

Contextual Info: Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 10 GD 60 DLC vorläufige Daten preliminary data Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage