TRANSISTOR G 945 Search Results

TO-220AB transistor package

Abstract: C-150 IRGB8B60K IRGS8B60K IRGSL8B60K
Contextual Info: PD - 94545B IRGB8B60K IRGS8B60K IRGSL8B60K INSULATED GATE BIPOLAR TRANSISTOR Features • • • • C Low VCE on Non Punch Through IGBT Technology. 10µs Short Circuit Capability. Square RBSOA. Positive VCE (on) Temperature Coefficient. VCES = 600V IC = 8.0A, TC=100°C

945 TRANSISTOR

Abstract: 700B M250 SD57030-01
Contextual Info: SD57030-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 30 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed DESCRIPTION The SD57030-01 is a common source N-Channel

irg 250

Abstract: IRGSL6B60K C-150 IRF530S IRGB6B60K IRGS6B60K
Contextual Info: PD - 94575A IRGB6B60K IRGS6B60K IRGSL6B60K INSULATED GATE BIPOLAR TRANSISTOR VCES = 600V C Features • Low VCE on Non Punch Through IGBT Technology. • 10µs Short Circuit Capability. • Square RBSOA. • Positive VCE (on) Temperature Coefficient. IC = 7.0A, TC=100°C

AN1294

Abstract: J-STD-020B LET9045S PD57030S capacitor 220uf
Contextual Info: LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 17 dB gain MIN @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE

PD57045S

Abstract: 700B AN1294 PD57045
Contextual Info: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,

diode 10a 400v

Abstract: 10a 400v bipolar transistor transistor IRF 630 ultrafast diode 10a 400v ultrafast swiching transistor C-150 IRFI840G IRGIB10B60KD1
Contextual Info: PD-94576A IRGIB10B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

M250

Abstract: SD57060-01 TSD57060-01
Contextual Info: SD57060-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed DESCRIPTION The SD57060-01 is a common source N-Channel

transistor c 2335

Abstract: C-150 IRFI840G IRGIB15B60KD1
Contextual Info: PD- 94599 IRGIB15B60KD1 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE on Non Punch Through IGBT Technology. • Low Diode VF. • 10µs Short Circuit Capability. • Square RBSOA. • Ultrasoft Diode Reverse Recovery Characteristics.

MRF9030N

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF9030N Rev. 11, 9/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF9030NBR1 945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET • Typical Performance at 945 MHz, 26 Volts

NPN transistor 2n2222 beta value

Abstract: 2N2222 transistor output curve B550 TRANSISTOR static characteristic for 2n2222 transistor 2N2907 NPN Transistor transistor k 2021 beta transistor 2N2222 2n2222 h parameter values 2N2222 transistor curve 2n2222 iv
Contextual Info: EL2021C EL2021C Monolithic Pin Driver Features General Description  Wide range of programmable analog output levels  0 5 Ampere output drive with external transistors  Programmable Slew Rate  Low overshoot with large capacitive loads-stable with 500 pF

PD57060s

Abstract: 700B AN1294 PD57060
Contextual Info: PD57060 PD57060S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 60 W with 14.3 dB gain @ 945 MHz / 28V PowerSO-10RF formed lead • NEW RF PLASTIC PACKAGE

SD57045

Abstract: 945 TRANSISTOR 700B M250 SD57045-01
Contextual Info: SD57045-01 RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45W WITH 13 dB gain @ 945 MHz • BeO FREE PACKAGE M250 epoxy sealed ORDER CODE SD57045-01

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

HP5082-2811

Abstract: hp50822811 transistor at 1438
Contextual Info: T EL EDYNE COMPONENTS 3bE D • fleJ17bOE ü007tGb G ■ TSC ‘T WTELEDYNE COMPONENTS “ * 7 0i - V 5 1438 OPERATIONAL AMPLIFIER — WIDEBAND, FAST-SETTLING FEATURES GENERAL DESCRIPTION ■ ■ ■ ■ ■ ■ ■ The 1438 hybrid operational amplifier offer» versatility

MP7529

Abstract: cd5-14
Contextual Info: XRD4433 • y y i g E ^ A l K , .the analog plus company A nalog-to-D igital C o n v e rte r with Digitally C ontrolled R eferen ces July 1997-2 FEATURES APPLICATIONS • 3 Independent 10-Bit ADCs • Precision CCD Systems • Simultaneous Sampling @ 3.0 MSPS

Contextual Info: HFA16TB120SPbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 16 A FEATURES • • • • • • • Ultrafast recovery Ultrasoft recovery Very low IRRM Very low Qrr Specified at operating conditions Lead Pb -free Designed and qualified for industrial level

tlp508

Abstract: JIS-C-5020 JIS C7021 B10 TLP645 JIS-C-5003 JISC5700 TLP573 TLP546G SCR 7704
Contextual Info: 9. Reliability 9.1 General In recent years, as the application fields for photo couplers expand, more discussions are being made on reliability. For reliability improvement, it is insufficient to perform strinct process management and to have reliability tests such as life test and environmental tests. It is necessary to

U2740B-FP

Abstract: NPN planar RF transistor 16 bit ic rf encoder programmable read write transponder transistor C892 e5550F-S8 M44C0W RF ENCODER RF 125khz receiver ir preamplifier
Contextual Info: Tem ic S e m i c o n d u c t o r s Selector Guide Remote Control Part Number Function Key Features Package IR Transm itter / Receiver BPV23NF PIN diode IR photo detector, 875 to 950 nm, sensitivity typical 65 ^A TSHA520. IR emitter family High efficiency, ± 12°, 875 nm

RJP63k2

Abstract: rjp63f3 rjp30e2 RJP30H2 RJJ0319DSP rjp63f RJP30H3 rjj0319 BCR1AM-12A equivalent RJJ0606
Contextual Info: 2011.01 Renesas Discrete Transistor / Diode / Triac / Thyristor General Catalog www.renesas.com Power MOSFETs Thyristors/TRIACs Solutions from the new Renesas. Reducing the power consumption of the most advanced applications. Bipolar Transistors for Switching

voice control robot

Abstract: voice control robot circuits diagram TDG 2003 pin diagram of ic TDA2822 voice control robot circuits TDA2822 s TDA2822 8 pin TDA2822 industrial robot circuit diagram TDA2822 16 pin
Contextual Info: HT8950 Voice Modulator Features • Operating voltage: 2.4V~4.0V · 8-bit A/D and D/A converters · On-chip SRAM · LED indicator with voice level · Robot function · Push button selection or electronic mode · Vibrato function · Few external components required

Contextual Info: XRD4433 Analog-to-Digital :al Converter with Digitally Controlled References March 1998-3 FEATURES APPLICATIONS • 3 Independent 10-Bit ADCs • Precision CCD Systems • Simultaneous Sampling @ 3.0 MSPS • Color and B&W Scanners • Independent Digitally Controlled References

5007

Abstract: COMMUNICATIONS TRANSISTOR CORP EC-0006 EC-5007
Contextual Info: EC-5007 PRELIMINARY DATA LNA / DOWNCONVERTER 500–3000 MHz Features n n n n n n n n Single 3.0 to 5.0 Vdc Operation Separate LNA and Active Downconverter functions Balanced IF Output to 200 MHz Power-down Capability Low Power Consumption Low LO Power Use EC-0006 for LO drive

AN569

Abstract: NTB60N06L NTB60N06LT4 NTP60N06L
Contextual Info: NTP60N06L, NTB60N06L Power MOSFET 60 Amps, 60 Volts, Logic Level N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters, power motor controls and bridge circuits. http://onsemi.com Typical Applications

NFM61R10T102

Abstract: TOKO VARIABLE INDUCTOR LL2012-F8N2K EV0037 NFM61R10T102T1 toko variable capacitor MCR03J104 LL2012-F3N9K R12468 EC-0037
Contextual Info: EC-0037 VARIABLE GAIN AMPLIFIER 500–3000 MHz Features Applications n Low Power Consumption Power-down Capability Range n 50 Ohm Matched n Wide Gain Control n High Linearity for Digital Systems n Single 3.0 to 5.0 V Operation n Open-collector Design Allows Reactive Matching