TRANSISTOR G 945 Search Results

BLX92A

Abstract: BLX92 em 179 sfe 5,5 ma IEC134 transistor IR 944
Contextual Info: PHILIPS INTERNATIONAL HIE D E3 TllOfiEb 0027Ö37 G E3P HI N BLX92A M A IN T E N A N C E T Y P E U.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended for transmitting applications in class-A, B o r C with a supply voltage up to 28 V. The transistor is resistance stabilized and is guaranteed to withstand severe

transistor rf m 9860

Abstract: equivalent transistor c 4793 mosfet 4459 C 5763 transistor transistor c 4793 transistor 5763 transistor 17556 17556 transistor 17853 mosfet IC 4490
Contextual Info: -. MITSUBISHI RF POWER MOS FET ATTENTION OBSERVE PRECAUTIONS FOR HANDLING «ion date: I S ' V N o v . ’M ELETROSTATIC SENSITIVE DEVICES , O H X J F X Silicon MOSFET Power Transistor,520MHz 30W DESCRIPTION O U T L IN E D R A W IN G RD30HUF1 is a MOS FET type transistor specifically designed for

tokin

Abstract: Bipolar Static Induction Transistor transistor 03e static induction transistor 9936 transistor tokin transistor "static induction transistor" TOKIN America STATIC INDUCTION tokin
Contextual Info: TOKIN CORP NEW PRODUCTS UPDATE 54E D • *ìGb7b2b D D G 1 Q S G 202 H I T O A I T O K in TOKIN B-SIT New TBM Series led. Outline • TOKIN is offering a new series of normally-off Bipolar mode Static Induction Transistor B-SIT constructed using small-sized molded packages in a Darlington configuration.

Westinghouse diode

Abstract: KS8245A1 WESTINGHOUSE dc motor Westinghouse power diode S-8245 WESTINGHOUSE ELECTRIC westinghouse ac motor ks82
Contextual Info: r 7294621 PQWEREX INC dT | 75^51 DOOgflflT 7 B ~ — & Single Darlington TRANSISTOR Module Dim A B C D E F G H J K Inches 1.54 Max 1.27 * 0.008 .77 .65 .94 .276 .146 .165 .945 .126 T-33-35 15 Amperes 450 Volts Millimeters 39 Max 32.2 * 0.2 19.5 16.6 24 Max

IR2E27A

Abstract: Sharp IR2E02 IR2E01 IR2E25 Sharp IR2E27A IR2E02 IR2E27A SHARP LED ir2e01 ir2e09 IR2E28
Contextual Info: Product Lineup Product Lineup • Transistor Arrays 'S H A R P 4 Product Lineup SHARP 5 Product Lineup ■ Special Function Transistor Arrayys F u nc ti o n Mo del No. O utput v o lt a g e 1mA V) 400 12 -c irc u it P rinte r D river and IR 2402 1 - c i r c u i t R ib b o n Shif t D r i v e r

Contextual Info: SIEMENS BUZ 334 SIPMOS Power Transistor • N channel • Enhancement mode V3I0&'58 >f é Ì • Avalanche-rated Pin 1 Pin 2 G Type BUZ 334 Vbs 600 V Pin 3 D S b ffDS on Package Ordering Code 12 A 0.5 n TO-218AA C67078-S3130-A2 Maximum Ratings Parameter

TC-7986A

Abstract: 2SK2112 CMS01 7986A diode lt 0236
Contextual Info: zr — *5? N E h ^ > v ^ 3* MOS Field Effect Transistor r j C • :> — h 2 S K 2 1 1 2 MOS FET 2 S K 2 1 1 2 IÎN 3 1 + * ; H Ë M O S F E J T & U , * C ct 5 ¡ t g E K ^ g l * * -f -y T 't o * < - y * > 7 ìS j£ f c jÌt 'f c « > , C D r ^ ^ iX - ^ llE S i ^ ,

14549F

Abstract: itt 946 946-5D itt 9094 ITT 946-1D dtl logic gates 9094-5d ITT 9097 5D ITT DTL 944-5D
Contextual Info: ITT Sem iconductors Integrated C irc u its -D T L D T L Series L o g ic Elem ents The D T L fam ily is a com prehensive set of silicon m onolithic logic elements designed to cover a wide range of military and industrial applications. The basis of the fam ily is a diode-transistor

PA1501

Abstract: s 452-2 lt0246 NEC TRANSISTOR 8882 uPA1501 3TAE1 ssg diode fta 501 diode sg 5 ts
Contextual Info: ^ — 5 7 .= / — SEC ï ï t h Compound Field Effect Power Transistor / v t x ¿ N ^ ^ U x n ^ -M O S FET ¿ P A 5 I 1 7W I i f f l //PA1501 ±, 4 V . f g g j N f - ^ ^ 'V - M O S F E T £ 4 M OS F E T T “1 - C 0 T iJlffln ^ - y ^ IC K £ l * l / L T ^ Î - f W Ü - / 1 V ^ J^ ' 7 - - 7 Bn ^

A1604C

Abstract: P16C T108 T450 T540 PA1604
Contextual Info: NEC •• ■5 / — K Compound Field Effect P o w er Transistor u ^ y U '> y ^ / ¿ P A 1 6 0 4 ¡ 2 /< 7 -M O S P A 1 6 4 F E T 7 K , F E T ^ & £ 4 / 'Jy 7 ^ ^ 7 - M 0 S m ill& C H f W /> i K, X T '/ h °^ ^ E - ^ f | x g Jjf f lh L T ^ jU T '- T o $1

FZ 300 R 06 KL

Abstract: PA1603 Transistor NP 3773 TRANSISTOR PHL 641 PA1603CX uPA1603 L0734 IS352 l 0734
Contextual Info: ^ • J Ê S Ù * ^ 0 ,7 - Com pound Field Effect P o w e r Transistor " ^ y /¿PA1603 à, i y A 1 6 3 \ or7“ - MO S F E T 'Z U H ' MOS F E T h m iÜ M tfifr & & Ô 4 / g -> -y ? '*7 - MOS F E T 7 W T - , ïü f f ln i^ .y ÿ W f f l ; ÿ > 7 ° 9° O

2SC4813

Abstract: VDF pn C40r
Contextual Info: / \ ° 9 ~ y=7 > v 7 , $ Silicon Power Transistor 2SC4813 N PN X fcf $ + V 7JI/M v y =i > h -7 > y * £ 2SC4813 i, ¡ i î ü X ' f - y f L T i m $ a 7 ,i^Not7 - h 7 > >>X ? T'fÈ VCE(sat T'hFE^ ' lSJ'v ^ T " D C / D C r? L T ^ iS T 't o É fc , «F 7 ^ T ^ T - h 0> ^ " j± iiT 'g ijj^ ^ B ^ ^ 0' y ^ - ^ r è

TC-7606

Abstract: 2SK1283
Contextual Info: M O S Field Effect Pow er Transistor 2SK1283 7 /< 2SK 1283 fi, F E T T , N > 5 V m i l 1? ; * I C X 4 7 f > FET K f f p '- 'V — M O S K x 6 X T to i& ir y f& ÏA T , y i / / 0 ft -M O S ', x ^ y f -> y m t b t z ls b , i - > y°ff m ï\n z- g kïà T to

2sk81

Abstract: 2SK812 IEM-521 blf 578 3854 ru 4c diode
Contextual Info: M O S Field Effect P o w e r Transistor 2SK812 M O S FET jim m 2SK812 li, N IZ «fc ^ ¡ É ^ f ê K O T f ë f r i i i i È X >f f f- > t > Î 6 Î n > 1 g u / y # 'f MOS F E T T”, 5 V f H 7 K , < , > X 7 ^ S ^ y f > ijf [ J ic ^ # 1 4 a T t ¥ m m ,

D1351

Abstract: ELLS 110 2SA1458 U110 5925B
Contextual Info: Silicon Transistor 2SA1458 P N P n L £ ? j r ' > 7 J U i & ' > ' z i > b :ÿ > i S Z > 9 m m p i g i l i ¿s j: z f * m # m x + » 0X4 o - y f > =r u 9 ï f â f n m i î & ' h S 0 3 1 / ^ : ? i i r ! l ; ô iV J ' ? v \, t 'o 02SC3731 t rJ>7°'J / 'y 9 UTÎÎfflT'ë i t o

2SD552

Abstract: QS 100 NPN Transistor 2SB552 AC73 static characteristic BO180 a944 transistor 5Ft 2SD552-BN
Contextual Info: 2SD SILICON NPN TRIPLE DIFFUSED MESA TRANSISTOR 552 TENTATIVE o v ry ?m O I It X I ffl INDUSTRIAL APPLICATIONS O DC-DCay/f-ifl » Pow er A m p l i f i e r , o D O -D C C o n v e r t e r a n d R e g u l a t o r A p p l i c a t i o n s . • ! 8 B5 5 U • U n i t i n mm

2sc 945 p transistor

Abstract: transistor 2sc 945 945 npn transistor c 945 945 TRANSISTOR transistor amplifier 5v to 6v lc 945 transistor transistor 945 oms 450 TRANSISTOR 2SC
Contextual Info: 2SC 945 NPN SILICON PIANAR EPITAXIAL TRANSISTOR CASE 1’0-92B 2SC 945 IS AN NPN SILICON PLANAR EPITAXIAL TRANSISTOR DESIGNED FOR AUDIO FREQUENCY AMPLIFIER. IT IS COMPLEMENTA'RÏ TO THE PNP TYPE 2SA733. ABSOLUTE MAXIMUM RATINGS C o lle c to r-B a s e V o ltag e

AZ530-08-1

Abstract: az530 5V RELAY diode 310Q CALEX VOLTSENSOR relay 5 V 28V relay McEx TRANSISTOR 4841 10J1
Contextual Info: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D • 1011250 000105b 37b « C E X - T 'T 510 687-4411 (800) 542-3355 v s :*» _ FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter

Contextual Info: CALEX MANUFACTURING CO S2E D I IflllESG GDGIGBT 2^7 ICEX Models 166 and 167 Bridgesensors 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 BRIDGE POWER SUPPLY FAX: (510) 687-3333 7 1 -U -0 7 The bridge power supply is an adjustable regulated

bridge type transducer

Abstract: pressure transducer application Grounded Bridge Power Amplifier schematic circuit diagram rtd pressure instrumentation amplifier circuit temperature sensor using instrumentation amplifier circuit variable dc power supply 3 to 15 volt circuit rtd temperature instrumentation amplifier circuit the Instrumentation amplifier with the bridge type transducer instrumentation amplifier bridge transducer VR103V
Contextual Info: CALEX M A N U F A C T U R I N G CO £ 5 ië < 1B11250 52E D ICEX DD01033 07^ Model 165 Bridgesensor 2401 Stanwell Drive, Concord, CA 94520-4841 510 687-4411 (800)542-3355 FAX: (510) 687-3333 'T '- 7 ! - U ^ 7 FEATURES • No other Function Modules N eed ed . Just Add Power.

TRANSISTOR k2185

Contextual Info: Model 540 Voltsensor CALEX MANUFACTURING CO SEE 2401 Stanwell Drive, Concord, CA 94520-4841 D 1011250 000105b 510 687-4411 (800)542-3355 37b « C E X FAX: (510) 687-3333 FEATURES • Rugged reliable solid state replacement for meter relays. • Uses almost any power source from +5 to +32V D C

Contextual Info: LET9070FB RF power transistor from the LdmoST family of N-channel enhancement-mode lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT @ 28 V = 70 W with 16 dB gain @ 945 MHz ■

PD85035C

Abstract: 945 TRANSISTOR M243
Contextual Info: PD85035C RF power transistor, LdmoST family Features • Excellent thermal stability ■ Common source configuration ■ POUT = 35 W with 14.5 dB gain @ 945 MHz / 13.6 V ■ BeO-free ceramic package ■ ESD protection ■ In compliance with the 2002/95/EC european

Contextual Info: LET9060F RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 60 W with 18 dB gain @ 945 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european