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    TRANSISTOR FOR RF AMPLIFIER Search Results

    TRANSISTOR FOR RF AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CA3130AT/B
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130T
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    CA3130AT
    Rochester Electronics LLC CA3130 - 15MHz Operational Amplifier with MOSFET Input/CMOS Output PDF Buy
    BLA1011-300
    Rochester Electronics LLC BLA1011-300 - 300W LDMOS Avionics Power Transistor PDF Buy
    LM759H/B
    Rochester Electronics LLC LM759 - Power Operational Amplifier PDF Buy

    TRANSISTOR FOR RF AMPLIFIER Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC4703-T1

    Abstract: NE46234 2SC4703 2SC470-3
    Contextual Info: NPN SILICON RF TRANSISTOR NE46234 / 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage


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    NE46234 2SC4703 2SC4703 OT-89) dBV/75 PU10339EJ01V1DS 2SC4703-T1 2SC470-3 PDF

    NEC 2501

    Abstract: 2SC4536-T1 ic nec 2501 2501 NEC 2SC4536 nec RF package SOT89 qs marking sot-89
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4536 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4536 is designed for use in middle power, low distortion low noise figure RF amplifier. It features


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    2SC4536 2SC4536 OT-89) PU10338EJ01V0DS NEC 2501 2SC4536-T1 ic nec 2501 2501 NEC nec RF package SOT89 qs marking sot-89 PDF

    BFX60

    Abstract: p21e Q60206-X 510Z5 bfx 63 transistor for RF amplifier
    Contextual Info: BFX60 NPN Transistor for RF amplifier stages BFX 60 is an epitaxial NPN silicon planar RF transistor in a case 18 A 4 DIN 41876 T O -7 2 , with different lead arrangement however. The leads are electrically insulated from the case. The transistor is particularly suitable for common-emitter RF amplifier


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    BFX60 BFX60 Q60206-X p21e 510Z5 bfx 63 transistor for RF amplifier PDF

    nec 2501

    Abstract: ic nec 2501 nec RF package SOT89 2SC4703 2501 NEC 2SC4703-T1 2SC470-3
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4703 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW DISTORTION AMPLIFIER 3-PIN POWER MINIMOLD DESCRIPTION The 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage VCE = 5 V .


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    2SC4703 2SC4703 OT-89) PU10339EJ01V1DS nec 2501 ic nec 2501 nec RF package SOT89 2501 NEC 2SC4703-T1 2SC470-3 PDF

    JLN 2003

    Abstract: 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR
    Contextual Info: PreliminaryData Sheet 2SC4226 R09DS0022EJ0200 Rev.2.00 Jun 29, 2011 NPN Epitaxial Silicon RF Transistor for High-Frequency Low-Noise Amplification 3-pin super Minimold NPN Silicon RF Transistor DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier.


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    2SC4226 R09DS0022EJ0200 2SC4226 S21e2 2SC4226-A 2SC4226-T1 JLN 2003 2SC4226 APPLICATION NOTES newmarket transistor 2SC4226-T1 2SC4226-T1-A 2SC4226-A Korea Electronics TRANSISTOR PDF

    2SC5602

    Abstract: 2SC5602-T1 nec 8725 marking TW NEC 2561
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5602 NPN SILICON RF TRANSISTOR FOR LOW NOISE • HIGH-GAIN AMPLIFICATION 3-PIN ULTRA SUPER MINIMOLD FEATURES • High-gain transistor for buffer amplifier : S21e2 = 10.0 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 5 mA


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    2SC5602 S21e2 2SC5602-T1 2SC5602 2SC5602-T1 nec 8725 marking TW NEC 2561 PDF

    k 319

    Abstract: Q62702-F272 A 798 transistor transistor H 802 BFS55
    Contextual Info: BFS55 NPN Transistor for RF applications up to the GHz range BFS 55 is a NPN silicon RF transistor in a case 18 A 4 DIN 41 876 TO -72 . The terminals are electrically insulated from the case. The transistor is especially designed for use in RF applications up into the GHz range, e.g.,antenna amplifiers and radar


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    BFS55 BFS55 62702-F272 p21e--+ k 319 Q62702-F272 A 798 transistor transistor H 802 PDF

    marking R33

    Abstract: 2SC4227 2SC4227-T1
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4227 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4227 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


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    2SC4227 2SC4227 S21e2 2SC4227-T1 marking R33 2SC4227-T1 PDF

    2SC4226

    Abstract: 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4226 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


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    2SC4226 2SC4226 S21e2 2SC4226-T1 2SC4226 APPLICATION NOTES PU10450EJ01V0DS R25 marking 2SC4226 datasheet marking r25 NPN 2SC4226-T1 transistor s2p PDF

    2SC4228

    Abstract: 2SC4228-T1 TRANSISTOR R44
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC4228 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 3-PIN SUPER MINIMOLD DESCRIPTION The 2SC4228 is a low supply voltage transistor designed for VHF, UHF low noise amplifier. It is suitable for a high density surface mount assembly since the transistor has been applied 3-pin super minimold


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    2SC4228 2SC4228 S21e2 2SC4228-T1 2SC4228-T1 TRANSISTOR R44 PDF

    transistor 2sc3355 and application

    Abstract: transistor 2sc3355 and application NOTICE 2SC3355 2SC3355, npn 2SC3355-T PA33
    Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC3355 NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION DESCRIPTION The 2SC3355 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has lange dynamic range and good current characteristic.


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    2SC3355 2SC3355 2SC3355-T PU10208EJ01V0DS transistor 2sc3355 and application transistor 2sc3355 and application NOTICE 2SC3355, npn 2SC3355-T PA33 PDF

    2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC

    Abstract: 2.4 ghz transmitter rf test
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 6.0 WATTS, 1.6 GHz RF POWER TRANSISTOR


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    MRF16006 MRF16006 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz transmitter rf test PDF

    U18 524

    Abstract: 2SC4183 p 0368 mini IC 751 1124 U18 809
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applications. The 2SC4183 features high gain, low noise, and excellent forward


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    2SC4183 2SC4183 U18 524 p 0368 mini IC 751 1124 U18 809 PDF

    motorola sps transistor

    Abstract: motorola 572 transistor Motorola 1600 395C-01 sps transistor
    Contextual Info: MOTOROLA Order this document by MRF16030/D SEMICONDUCTOR TECHNICAL DATA The RF Line RF Power Transistor Designed for 28 Volt microwave large–signal, common base, Class–C CW amplifier applications in the range 1600 – 1640 MHz. 30 WATTS, 1.6 GHz RF POWER TRANSISTOR


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    MRF16030/D MRF16030 MRF16030 DEVICEMRF16030/D motorola sps transistor motorola 572 transistor Motorola 1600 395C-01 sps transistor PDF

    2N5643

    Contextual Info: New TELEPHONE: 201 376-2922 3STERNAVE. PRINGFIELD, NEW JERSEY 07081 .S.A. (212) 227-6005 FAX: (201) 376-8960 2N5643 The RF Line 40 W- 175 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed primarily for wideband large-signal amplifier stages in


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    2N5643 30Vdc. 2N5643 PDF

    Contextual Info: < Silicon RF Power MOS FET Discrete > RD10MMS2 RoHS Compliance, Silicon MOSFET Power Transistor,870MHz,10W OUTLINEDRAWING DESCRIPTION RD10MMS2 RoHS-compliant product is a MOS FET type transistor specifically designed for 870MHz RF power amplifiers applications.


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    RD10MMS2 870MHz RD10MMS2 12Wtyp, 870MHz 800MHz-band PDF

    transistor t06

    Abstract: RD00HHS1-101 lal04na1r0 RD00HHS1 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA
    Contextual Info: ELECTROSTATIC SENSITIVE DEVICE Silicon RF Power Semiconductors OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD00HHS1 Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    RD00HHS1 30MHz RD00HHS1 30MHz transistor t06 RD00HHS1-101 lal04na1r0 t06 TRANSISTOR LAL04NAR39 TRANSISTOR 7533 A LAL04NA PDF

    U18 524

    Abstract: 2SC4183
    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica­ tions. The 2SC4183 features high gain, low noise, and excellent forward


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    2SC4183 2SC4183 U18 524 PDF

    TRANSISTOR BO 346

    Abstract: BFX89 case BFX89 Power Transisitor 100V 2A Q62702-F296
    Contextual Info: B FX89 NPN Transistor for antenna amplifiers B F X 89 is an epitaxial N P N silicon RF transistor in a case 1 8 A 4 D IN 41876 TO-72 . The leads are electrically insulated from the case. This transistor is suitable for general applications and, for instance, for use in antenna and RF amplifiers up into the GHz


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    BFX89 BFX89 Q62702-F296 TRANSISTOR BO 346 case BFX89 Power Transisitor 100V 2A Q62702-F296 PDF

    Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4183 RF AMPLIFIER FOR UHF TV TUNER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD DESCRIPTION PACKAGE DIMENSIONS The 2SC4183 is specifically designed for UHF RF amplifier applica­ tions. The 2SC4183 features high gain, low noise, and excellent forward


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    2SC4183 2SC4183 PDF

    16HHF1

    Abstract: RD16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD16HHF1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,16W DESCRIPTION OUTLINE DRAWING RD16HHF1 is a MOS FET type transistor specifically designed for HF RF power amplifiers applications.


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    RD16HHF1 30MHz RD16HHF1 30MHz 16HHF1 TRANSISTOR D 471 RD 15 hf mitsubishi transistor d 1680 MOSFET 606 transistor d 1564 mosfet HF amplifier p 471 mosfet RD16HHF PDF

    LAL04NA

    Abstract: T113 RD00HHS1 mosfet HF amplifier RD00HHS1-101 3M Touch Systems
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications.


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    RD00HHS1 30MHz RD00HHS1 30MHz LAL04NA T113 mosfet HF amplifier RD00HHS1-101 3M Touch Systems PDF

    2779, transistor

    Abstract: 1348 transistor RD01MUS1 RD01MSU1 fet 547
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


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    RD01MUS1 520MHz RD01MUS1 520MHz 2779, transistor 1348 transistor RD01MSU1 fet 547 PDF

    c 879 transistor

    Abstract: transistor t06 TRANSISTOR 7533 mosfet HF amplifier RD00HHS1 a 933 transistor f-30MHz 933 TRANSISTOR
    Contextual Info: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD00HHS1 OBSERVE HANDLING PRECAUTIONS Silicon MOSFET Power Transistor 30MHz,0.3W OUTLINE DRAWING RD00HHS1 is a MOS FET type transistor specifically designed for HF RF amplifiers applications. 4.4+/-0.1


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    RD00HHS1 30MHz RD00HHS1 30MHz c 879 transistor transistor t06 TRANSISTOR 7533 mosfet HF amplifier a 933 transistor f-30MHz 933 TRANSISTOR PDF