TRANSISTOR F 8E Search Results

MRF227

Abstract: MRF227 equivalent 420 NPN Silicon RF Transistor transistor 7905 J 420 G
Contextual Info: MOTOROLA SC XSTRS/R F 4bE D b3b72S4 0£m 50fl 7 MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF227 The RF Line 3 W - 225 MHz R F POWER TRANSISTOR NPN SILIC ON NPN SILICON RF POWER TRANSISTOR . . . designed for 12.5 Volt large-signal power amplifier applica­

2N3948

Contextual Info: MO T O R O L A SC XSTRS/R F 4bE D • b3b72St4 00^403^ *1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3948 The R F Line 1.0 W - 400 MHz HIGH FREQUENCY TRANSISTOR N PN S IL IC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier applications i n industrial and com*

2N5160

Abstract: 2N5160 MOTOROLA MRF5160 MRF*5160 MRF5160HX 2N3866 MRF5160HXV J0240 RIA 39 transistor MRF516
Contextual Info: I MOTOROLA SC XSTRS/R F 4 bE b 3 b 7254 D 00=14075 7 MOTOROLA m o T b " P 3 3 - I 7 - • SEMICONDUCTOR TECHNICAL DATA 2N5160 T h e R F Line If = -4 0 0 m A POWER TRANSISTOR PNP SILICON RF POWER TRANSISTOR P N P S ILIC O N . . . designed fo r am plifier, frequency m ultiplier or oscillator applica­

2SK680

Abstract: 2sk68 TRANSISTOR DG S-10 tc6106
Contextual Info: M O S Field Effect Power Transistor 2SK680Ü, N - f ?Wb|ÊÉ ^“'7 - M 0 S F E T T ', J : £ i f i f ê l i I ! j * r 5 T t b £ : x -i v - f > i , ^ 7 i t i t i 5 V t l# JC « ( ¥ f i 4 .5 ± 0 .1 X T 't„ f f if t - C V 'S f c t f ) , T : m m ) ?

Contextual Info: SILICON TRANSISTOR 2SC4179 FM /A M RF AMPLIFIER, MIXER, OSCILLATOR, CONVERTER NPN SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters • High Gain Bandwidth Product: f-j- = 250 MHz TYP. • Low O utput Capacitance: CQb = 1.8 pF TYP. • Low Noise Figure: NF * 2.0 dB TYP.

MGF4310

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G F 4310E Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION OUTLINE DRAWING The M G F 4 3 1 0E series super-low-noise HEMT High Electron Mobility Transistor is designed for use in X to Unit: millimeters (inches) 4 M iN .

FMMT918

Abstract: marking of m7 diodes transistor EH sot-23 A12 marking sot-23 MARKING CODE G1 3B sot23 marking m6 marking transistor sot-23 ferranti marking code CB sot23 transistor marking code 7E SOT-23
Contextual Info: FERRANTI * semiconductors FMMT918 NPN Silicon Planar V H F /U H F Transistor DESCRIPTION This device is intended for low noise, high frequency amplifier and oscillator applications. Encapsulated in the popular SOT-23 package the device is designed specifically for use in thin and thick film hybrid

Contextual Info: TOSHIBA TLP321 ,TLP321 -2JLP321-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR T• I P■ 3IMF7 1■ g T■ I P■ 3MP7 1 - ? g TU I P■ 3IM7 - Æ■ F 1■ PRO GRAM M ABLE CONTROLLERS DC-OUTPUT MODULE TELECOMMUNICATION The TOSHIBA TLP321, -2 and -4 consist of a photo-transistor

L147F

Abstract: mo9t Transistor 3-347 UL147F 3-347 transistor ADE 450
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet B U M 47* BUL147F* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications *Moton>la Pr*f«rr*d D *vic* POWER TRANSISTOR 8.0 AMPERES 700 VOLTS 45 and 125 WATTS The BUL147/BUL147F have an applications specific state-of-the-art die designed

MJ12005

Abstract: MJ12005 MOTOROLA MR918 4229P-L00-3C8 POT CORE 4229P-L00 4229PL00-3C8 motorola mj12005 Motorola mr918
Contextual Info: MOTOROLA SC XSTRS/R F 15E D I L3t?aSM QOflSQTS 7 | MOTOROLA SEM ICO N DUCTO R TECHNICAL DATA 8 AMPERE NPN SILICON POWER TRANSISTOR HORIZONTAL DEFLECTION TRANSISTOR . . . s p e c ific a lly designed fo r use in d e fle c tio n c irc u its . • V c E X = 1500 V

2SA1871

Abstract: 2SC4942 TC789
Contextual Info: — S 7 • 5/— h '> U =3 > h^ Silicon Transistor 2SC4942 N P N = Ü £ t m S ' y =1 v h ^ r s jîf fiÎ/ d E - X ' ' f 2SC4942 i B i i Î J Î S W Œ X ^ f- > ?" • l^ — ^ -y^f X ^ 'y -y ( W i • m m D C / D C ^ > '< — ? & t * 6 D X ' f ' y ^ >

BUX13

Abstract: transistor BUX Thomson CSF BUX 115
Contextual Info: * B U X 13 N PN S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A TR A N SIS TO R S IL IC IU M NPN, MESA T R IP L E D IF F U S E ^ P re fe rre d device Dispositif recommandé High speed, high current, high pow er transistor Transistor de puissance rapide, fo rt courant

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA & *1 f t UL VDE C SA SETI ® ® ® 8EMKO DEMKO NEMKO BABT GlobalOptoisolatorTV 6-Pin DIP Optoisolators Transistor Output MCT2 MCT2E [CTR •20% Min] The M CT and M CT2E devices consist of a gallium arsenide Infrared emitting

s4oc

Abstract: KW4A BUX11A curvas transistor
Contextual Info: G E SOLID STATE 01 3875081 G E SOLID STATE DE | 3 ñ 7 S D f l l ~0 I E " 1 7 5 9 6 — . . — , - ,. 0 D1 7 STb D ~ f~ - Pro Electron Power Transistors • File Number' 1353 High-Current, High-Power, High-Speed Silicon N-P-N Power Transistor

MJ10016HX

Contextual Info: !4bE D • b3b72S4 DORS^QS MOTOROLA SC 7 ■MOTt 7^2^27 XSTRS/R F MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJ10016HX, HXV NPN Silicon Power Darlington Transistor DM0 m in i Discrete Military Operation . .designed for high-voltage, high-speed power switching in inductive circuits where fall

Contextual Info: • 4305571 00544A5 T3b ■ H a r r i s January 1993 HAS R F A 1 N 5 E N-Channel Enhancement-Mode Power Field-Effect Transistor MegaFET Package Features • 1 0 0 A, 50 V • rD S(on) = 0 .0 0 8 f l D R A IN • E lectro static D ischarge Rated • UiS S O A Rating C urve (Single Pulse)

sot-23 MARKING CODE G1

Abstract: C5 MARKING TRANSISTOR sot 23 marking code 2t BFS20 sot-23 Marking G1 MARKING CODE DH SOT 23 marking code C5 sot23 marking H6 sot 23 marking code CB sot23 marking of m7 diodes
Contextual Info: FERRANTI semiconductors BFS20 NPN Silicon Planar VHF Transistor DESCRIPTION These devices are intended fo r IF and V H F applications w here lo w feedback capacitance is required. Encapsulated in the popular SOT-23 package these devices are designed specifically fo r use in thin and thick film

I348

Abstract: TMDB IRFM360 SS452 I-348
Contextual Info: Data Sheet No. PD-9.712A INTERNATIONAL RECTIFIER I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM36Q ;n N-CHANNEL 400 Volt, 0.20 Ohm HEXFET Product Summary T h e H E X F E T ® technology is the key to International Part N um ber

2N6790

Abstract: diode RA 225 R
Contextual Info: 2N6790 23 HARRIS N-Channel Enhancement-Mode Power MOS Field-Effect Transistor August 1991 Features Package T0-205A F BOTTOM VIEW • 3.5A, 200V * rD S on = 0 -8 n * S O A is P ow er-D issip atio n Lim ited SOURCE • N anosecond Switching S peeds GATE _

current mirrors wilson

Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Contextual Info: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance

SAI SOT23

Abstract: T-589 5C500
Contextual Info: SOT23 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE3 - OCTOBER 1995 FMMT489 G It FEATURES * V ery lo w e q u iv a le n t on -re sista rice ; RCE 5at 175m£). CO M PLEM ENTARY TYPE - F M M T589 PARTM ARKING DETAIL - 489 a t 1A PARAMETER SYMBOL VALUE UNIT

N12111

Abstract: ir 9214 TP 9212 F 9214 9218 9214
Contextual Info: Transistors with built-in Resistor UN9211 / 921 E/921 F/921 K/921 L/UNR921 M/921 N/921AJ/921BJ/921CJ Silicon NPN epitaxial planer transistor U nit: mm For digital circuits • Features • Costs can be reduced through downsizing of the equipment and

uPA604T

Abstract: IC-8413 PA604T T540 25bgie
Contextual Info: I z\> Silicon Transistor ¿¿PA604T ^PA604T ü , KM m ì : mm) Yÿ>î SX9 * 2 m & f t M L t z i H ë Ü lt w r ê ii, x H 4# c o B iJ M ìc m ÌK L i t » « V s t 15] O S C - 5 9 '-f-y y h ÿ 9 > -^X t o^PA605T £ 2 tv- 'i XCO'< ~y 'r - v C 0 Ï& I* ];*

sn29601

Abstract: SN7400J 9601C Direct Replacement DALLAS SN7404J SN7410J SN29002 SN29003 SN29004 Sn2960
Contextual Info: SERIES 29000 TRANSÌSTOR-TRANSISTOR LOGIC jdescription Senes 2 9 0 0 0 devices are designed to be used in existing systems as replacments fo r 9 0 0 0 -ty p e circuits. Series 2 9 0 0 0 circuits o ffe r several significant advantages over 9 0 0 0 type circuits, some o f w hich are: