TRANSISTOR F 463 Search Results

Contextual Info: MOTOROLA SC XSTRS/R F 4bE D • b3b72SH MOTOROLA 3 T - 3 3 - 1 3 ■I SEM ICONDUCTOR TECHNICAL DATA 2N6166 T h e R F L in e 100 W A T T S - 150 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTOR NPN S IL IC O N designed f o r V H F p o w e r a m p lifie r a p p lic a tio n s in m ilita ry and in ­

C459

Abstract: 2N1613 1613 14 AMB-45
Contextual Info: Nicht für Neuentwicklungen Not for new developm ents 2 N 1613 'W Silizium-NPN-Planar-Transistor Silicon NPN Planar Transistor Anwendungen: HF-Verstärker und schnelle Schalter Applications: RF am plifiers and high speed switches Besondere Merkmale: • Hohe Sperrspannung

m64084

Abstract: m64084a M64084AGP KSS tcxo 12.8MHz Cordless telephone system block diagram M64884 DUAL XTAL OSCILLATOR IC TCXO KSS MITSUBISHI LOT NO. CODE mitsubishi Lot No. Year code
Contextual Info: MITSUBISHI ICs Cordless Telephone M64884FP Transistor for VCO,1st IF MIX,2-multiple circuit built-in 500MHz/1GHz Dual PLL Synthesizer 1.DESCRIPTION The M64884FP is a 2-sy stem 1-chip PLL f requency s y nthesizer IC designed of Analog cordless telephone f or North

MGF4916F

Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGF4910F Series SUPER LOW NOISE InGaAs HEMT DESCRIPTION The M G F 4 9 1 0 F series super-low -noise HEMT High Electron M ob ility Transistor is designed fo r use in X to K band am plifiers. The herm etically sealed m etal-ceram ic

NE46134

Abstract: FRO 021 0027 2SC4536 AN-1001 NE46100 S21E
Contextual Info: NPN MEDIUM POWER MICROWAVE TRANSISTOR NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA FEATURES • HIGH DYNAMIC RANGE 30.0 • HIGH OUTPUT POWER : 27.5 dBm at TYP 28.0 • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST

TM4637

Contextual Info: S T M 4637 S amHop Microelectronics C orp. Oc t. 20, 2007 P -C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON (m Ω S uper high dense cell design for low R DS (ON ). ) Max R ugged and reliable. 23 @ V G S = -10V

TA7921

Abstract: 150 watt hf transistor 12 volt rca 632 2N5993 rca transistor RCA rf power transistor 452 transistor 225/TA7921
Contextual Info: File No. 452 0UQB//D ^ow er Transistors Solid State Division 2N5993 18-W CW 8 8 -M H z E m itterBallasted Overlay Transistor Silicon N -P-N T ype for 12.5-Volt Applications in V H F Com m unications Equipm ent Features: • ■ ■ ■ ■ Emitter-ballasting resistors

MRF8004

Abstract: turns equivalent transistor rf "30 mhz" MRF800 equivalent transistor rf
Contextual Info: MRF8004 SILICON T h e RF L ine 3.5 W - 27 MHz R F POWER TRANSISTOR NPN SILICON R F POWER TRANSISTO R NPN SILICON . . . designed p rim a rily fo r use in large-signal o u tp u t a m p lifie r stages. Intend ed fo r use in C itiz e rv B a n d c o m m u n ic a tio n s e q u ip m e n t o p e ra t­

Contextual Info: PD -91863A International I« R Rectifier IRHF7430SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 1.6£2, SEE RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol­

E13005D

Abstract: transistor 13005D transistor 3005D transistor I 3005D 13005d LO 13005D TRANSISTOR 13004D 13005D TRANSISTOR TR 13005D w 13005d
Contextual Info: TE13004D • TE13005D Te m ic TELEFUNKEN Semiconductors Silicon NPN High Voltage Switching Transistor Features • M o n o lith ic in teg r a ted C - E -f r e e -w h e e l d io d e • H IG H S P E E D te c h n o lo g y • P la n a r p a ssiv a tio n •

Contextual Info: N ational J u ly 1 9 9 6 S e m ic o n d u c t o r ” NDS8926 Dual N-Channel Enhancement Mode Field Effect Transistor G e n e ra l D e s c r ip tio n F e a tu re s T he s e N -C h a n n e l e n h a n c e m e n t m o d e e ffe c t tra n s is to rs a re p ro d u c e d

2SA1882

Abstract: 2SC4984
Contextual Info: Ordering number:4633 PNP/NPN Epitaxial Planar Silicon Transistor 2SA1882/2SC4984 Low-Frequency General-Purpose Amplifier Applications Applcations Package Dimensions • Low-frequency power amplifier applications. · Medium-speed switching. · Small-sized motor drivers.

Victory Engineering Thermistor

Abstract: VECO Thermistor victory engineering corporation VECO thermistors Victory Engineering
Contextual Info: VICTORY ENGINEERING COR 74C 0 / 1483075 0Q00704 071 T-H-2S- VICTORY ENGINEERING CORPORATION VI CT ORY ROAD, P.O. BOX 559, S P R I N G F I E L D , NEW J ERSEY 07081 T W X : 7 1 0 -3 3 3 -4 -4 3 0 TEL: 201 • 3 7 3 -5 3 0 0 V E C O T E C H N IC A L B U L L E T IN M SV111

horizontal section in crt television

Abstract: Electron Tubes crt DEPLETION electron gun CRT
Contextual Info: ^ 5 1?' 1* 5 1 ° .- J È 1 ° 7i -Q 33-C& ° w 30^ ¥ . • V No p ic Ì & ^ ^ g ig vb |ii.’Qf fo c u s ,';! arriicFocus Transistor M § fe 3 i ; Dynamic focuè' transistor^chip "1; transistors, with Very high withstand, voltage, by HVP process " - . •’

2n3055 motorola

Abstract: tip122 tip127 audio amp schematic transistor equivalent book 2sc2238 IR640 transistor motorola 40411 TRANSISTOR REPLACEMENT GUIDE ir431 motorola AN485 C2688 2SA1046
Contextual Info: Index and Cross Reference 1 Selector Guide 2 Data Sheets 3 Surface Mount Package Information and Tape and Reel Specifications 4 Outline Dimensions and Leadform Options 5 Applications Information 6 Thermal Clad is a trademark of the Bergquist Company. Chipscretes, Designers’, Duowatt, EpiBase, PowerBase, PowerTap, SUPERBRIDGES, Surmetric, Switchmode, Thermopad,

EMC2DXV5

Abstract: EMC4DXV5
Contextual Info: EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common Base-Collector Bias Resistor Transistors http://onsemi.com 3 2 R1 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network 1 R2 Q2 R2 Q1 The BRT Bias Resistor Transistor contains a single transistor with

2SC1223

Abstract: 2SC2150 2SC2367 NEC NE "micro x" d 2SC2585 2SC3604 NEC NE "micro x" 2SC2148 NE AND micro-X 2SC2149
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3604 NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE LOW-NOISE AMPLIFICATION PACKAGE DIMENSIONS in mm noise amplification at 1.0 to 6.0 GHz. This transistor has low-noise and high-gain characteristics in a wide collector current region, and

Si3201

Abstract: Si321x AN47 ac proslic max 32Q1 0X0012 I321
Contextual Info: AN47 S i321 X L I N E F E E D P O W E R M O N I T O R I N G A N D P R O T E C T I O N Introduction The Silicon Laboratories’ ProSLIC products are designed to continuously monitor the power dissipated in each of the six external bipolar transistors in the

"CHAPTER 1 Introduction to Power Semiconductors"

Abstract: schematic diagram on line UPS 10kva sith thyristor "static induction thyristor" "Power Semiconductor Applications" Philips Power Semiconductor Applications Philips Semiconductors ups schematic 10kva static induction Thyristor CHAPTER 1 Introduction to Power Semiconductors SIT Static Induction Transistor
Contextual Info: Introduction Power Semiconductor Applications Philips Semiconductors CHAPTER 1 Introduction to Power Semiconductors 1.1 General 1.2 Power MOSFETS 1.3 High Voltage Bipolar Transistors 1 Introduction Power Semiconductor Applications Philips Semiconductors General

SOT363 flash

Abstract: sot89 "NPN TRANSISTOR" PBSS4240Y PBSS5240Y nxp Standard Marking
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET fpage MBD128 PBSS4240Y 40 V low VCEsat NPN transistor Product data sheet 2001 Jul 13 NXP Semiconductors Product data sheet 40 V low VCEsat NPN transistor PBSS4240Y FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage

NSBC113EPDXV6T1

Abstract: THEREMIN NSBC114EPDXV6T1 NSBC114EPDXV6T5 NSBC114TPDXV6T1 NSBC114YPDXV6T1 NSBC123EPDXV6T1 NSBC124EPDXV6T1 NSBC143TPDXV6T1 NSBC144EPDXV6T1
Contextual Info: NSBC114EPDXV6T1, NSBC114EPDXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with

BSS38

Abstract: IEC134
Contextual Info: BSS38 PH IL I P S INTERNATIONAL SbE » 7 1 1 0 Ô 2 L 00 42330 T7fl • PHIN — SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in a plastic TO-92 envelope. It is primarily intended for general purpose switching and as driver for numerical indicator tubes.

1000w inverter PURE SINE WAVE schematic diagram

Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Contextual Info: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design

Contextual Info: EMD4DXV6T1, EMD4DXV6T5 Preferred Devices Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 3 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base