TRANSISTOR F 421 Search Results

ferroxcube for ferrite beads 56-590-65

Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
Contextual Info: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •

Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62786AP/F/AF TD62787AP/F/AF 8CH HIGH-VOLTAGE SO U RC E DRIVER The TD 62786AP/F/A F series are eight channel huyx non­ inverting source current transistor array. All units feature integral clamp diodes for switching inductive loads.

NFC15-48S05-4

Abstract: a1092
Contextual Info: 2SC5536A Ordering number : ENA1092 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ f=150MHz . High gain : ⏐S21e⏐2=16dB typ (f=150MHz).

2SC3607

Contextual Info: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . 1.6 M A X. 4.6 M A X . Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= 9.5dB f = 1GHz 1.7 M A X. g l- Q4±a05

Contextual Info: Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

Contextual Info: Ordering number : EN1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor SA\YO Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i F eatures • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.

Contextual Info: Ordering number : EN1626C _ k smiYo 2SC3642 NPN Triple Diffused P lanar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications I F e a tu re s • High reliability Adoption of HVP process . • High speed.

Contextual Info: Ordering number : EN4783 _ 2SC5045 NPN Triple Diffused P lan ar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s • High speed tf= 100ns typ . • High reliability (Adoption of HVP process).

Westinghouse diode

Abstract: kd32 1B2 diode
Contextual Info: 7294621 POWEREX INC 150 Amperes 4 5 0 /1 0 0 0 Volts b2 DE I 7E14tHl 0 0 0 D C134 Û f _ 0 T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150+ .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max

Transistor BJD

Abstract: 2SC3176 9At TRANSISTOR SC46 N0131
Contextual Info: Ordering num ber: EN1312B _ 2SC3176 N0.1312B NPN Epitaxial Planar Silicon Transistor CRT Horizontal Deflection Output Applications with Damper Diode F e a tu re s •Fast switching speed. • Especially suited for use in high-definition CRT display (Vcc = 12 to 24V),

2SC3643

Abstract: I321
Contextual Info: Ordering number: EN 1627B I _ No.1627B 2SC3643 NPN Triple Diffused Planar Silicon Transistor Ve r y Hig h -De f i n i t i o n Dis p l a y Ho r iz o n t a l De f l e c t io n Output Ap p l ic a t io n s Features . High reliability Adoption of HVP process

vij smd diode

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1476 R E P E T IT IV E A V ALAN CHE A N D dv/dt R A TED IRHN2C50SE IRHN7C50SE HEXFET-TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D 600 Volt, 0.60ft, (SEE) RAD HARD HEXFET

2SC3447

Abstract: 200T FR57 25C312 1545B
Contextual Info: Ordering number:EN 1545B 2SC3447 NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r s Featrues - High breakdown voltage and high reliability • Fast switching speed tf: O.lps typ. • Wide ASO • Adoption of MBIT process

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160

2N3798

Abstract: 2N3799 MMCF3798 MMCF3799
Contextual Info: MMCF3798 SILICON MMCF3799 FLIP-CHIP PNP SMALL-SIGNAL AMPLIFIER TRANSISTORS F lip -C h ip — PNP silicon A n n ular transistor fa m ily fo r low-level low-noise a m p lifie r applications sim ilar to th e 2 N 3 7 9 8 and 2N 3 7 9 9. Prim ary Electrical Features:

Contextual Info: STB/P423S Feb.26,2007 S amHop Microelectronics C orp. P- Channel Logic Level E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S ID - 40V - 65A R DS ON F E AT UR E S 4 ( m W ) Max S uper high dense cell design for extremely low R DS (ON) .

c3v5

Abstract: 2N6101 A 6099 6099 transistor ESM 2N6099 CARACTERISTIQUES transistor bf 422 NPN
Contextual Info: 2I\I 6099 NPN SILICON TRANSISTOR, HOMOBASE |^| g -j Q-| TR A N S IS TO R N P N S IL IC IU M , H O M O B A S E Compl. of ESM 141, ESM 142 • LF large signal power amplification A m plification B F grands signaux de puissance V - High current switching CEO

NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

2SC3446

Abstract: 4J P 181 2SC34
Contextual Info: Ordering num ber:EN 1544B 2SC3446 No.1544B NPN T rip le Diffused Planar S ilic o n Transistor F or Sw i t c h i n g Re g u l a t o r s Features • * • * High breakdown voltage and high reliability Fast switching speed tf: O.lps typ. Wide A S O Ado p t i o n of MBIT process

PU421

Abstract: 1026A PS 1025A PU3113 PU3213 PU4113 PU4213 PU4413 PU4513 6 "transistor arrays" ic
Contextual Info: Power Transistor Arrays P U 3213, P U 4213, P U 4513 PU3213, PU4213, PU4513 P a c k a g e D im e n s io n s PU3213 P o w e r A m p lifier, S w itch in g C o m p le m e n ta ry P a ir with P U 3 1 1 3 , P U 4 1 1 3 , P U 4 4 1 3 • F e a tu re s • • •

LT1839

Abstract: 120Vmin LG CRT monitors lg high frequency transistor
Contextual Info: MOTOROLA SC XSTRS/R F 4 bE D • b 3 b ? 2 S M □□*14211 b ■ MOTb MOTOROLA T - 3 3 "0 5 ■ i SEM IC O N D U C T O R TECHNICAL DATA LT1839 The RF Line NPN Silicon High Frequency Transistor fT = 1000 MHz M IN HIGH FREQUENCY TRAN SISTO R NPN SILICON . . . s p e c ific a lly d e s ig n e d fo r C R T d r iv e r a p p lic a t io n s r e q u irin g h ig h f re q u e n c y a n d h ig h

K 2545 transistor

Abstract: 41 BF transistor transistor bf 422 transistor BF 606 BF 830 transistor transistor marking code 41 BF transistors bf 423 BF423S Transistor marking code K transistor BF 423
Contextual Info: TELEFUNKEN ELECTRONIC 17E D • 6 ^ 2 0 0 % 000^407 BF 421S BF 423 S ■¡nmiFWOKIKl electronic CfMtwT«cfwwtoe*e$ Silicon PNP Epitaxial Planar RF Transistors Applications: Video B-class power stages in TV-receivers Features: • BF 421 S complementary to BF 420 S

2N4854

Abstract: 2N4854U ADC-03 2n4854 to-78
Contextual Info: TECHNICAL DATA 2N4854 JTX, JTXV 2N4854U JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/421 DEVICES NPN/PNP SILICON COMPLEMENTARY SMALL-SIGNAL DUAL TRANSISTOR MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current