TRANSISTOR F 421 Search Results

ferroxcube for ferrite beads 56-590-65

Abstract: VK200-20-4B MRF628 ferroxcube ferrite beads npn 1349 1348 transistor VK20020-4B 56-590-65/3B transistor c 1349 56-590-65-3B
Contextual Info: MRF628 silicon The RF Line 0.5 W - 470 MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . . designed fo r 5 .0 * 15 V o lt, V H F /U H F large-signal A m p lifie r/M u l­ tiplier applications in m ilitary and mobile FM equipment. •

Contextual Info: SILICON MONOLITHIC BIPO LAR DIGITAL INTEGRATED CIRCUIT TD62786AP/F/AF TD62787AP/F/AF 8CH HIGH-VOLTAGE SO U RC E DRIVER The TD 62786AP/F/A F series are eight channel huyx non­ inverting source current transistor array. All units feature integral clamp diodes for switching inductive loads.

Contextual Info: 2SC5536A Ordering number : ENA1092A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz)

NFC15-48S05-4

Abstract: a1092
Contextual Info: 2SC5536A Ordering number : ENA1092 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC5536A VHF Low-Noise Amplifier, OSC Applications Features • • • • Low-noise : NF=1.8dB typ f=150MHz . High gain : ⏐S21e⏐2=16dB typ (f=150MHz).

2SC3607

Contextual Info: TOSHIBA 2SC3607 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC3607 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . 1.6 M A X. 4.6 M A X . Low Noise Figure, High Gain. NF = l.ldB, |S2iel2= 9.5dB f = 1GHz 1.7 M A X. g l- Q4±a05

Contextual Info: Ordering number : ENA1092A 2SC5536A RF Transistor 12V, 50mA, fT=1.7GHz, NPN Single SSFP http://onsemi.com Features • • • • Low-noise : NF=1.8dB typ f=150MHz 2 High gain : ⏐S21e⏐ =16dB typ (f=150MHz) Ultrasmall, slim flat-lead package (1.4mmx0.8mm×0.6mm)

TRANSISTOR J 5804 NPN

Abstract: nec 2501 LD 229 transistor NEC D 986 NEC 2501 MF 216 nec 2501 LD 325 tfr 586 nec 2501 Le 629 CD 1691 CB MC 151 transistor 567/triac ZO 410 MF
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4885 NPN SILICON EPITAXIAL TRANSISTOR 3 PINS SUPER MINI MOLD PACKAGE DIMENSIONS Units: mm FEATURES • Excellent Low NF in Low Frequency Band 2.1 ± 0.1 • Low Voltage Use 1,25±0.1 • Low C o b : 0.9 p F T Y P . • Low Noise Voltage : 90 mV TYP.

118-136-MHz

Abstract: 118-136 mhz
Contextual Info: □ MC D I S G S-THOMSON □ D G 010G 7^237 7^33 ~ ° 7 Ü IE?;' *5 '•-’I ' •-> ' \ f :lÿjgj%bmeÿvjiÿB, P/yjB936^^^ VHF COMMUNICATIONS TRANSISTOR DESCRIPTION 230 The SD1013-3 is an epitaxial silicon NPN planar transistor designed primarily for 12.5 volt AM class C rf amplifiers functional in the

Contextual Info: SIEMENS BUZ 71 A Not for new design SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Type Vds b f f DS on Package Ordering Code BUZ 71 A 50 V 13 A 0.12 £2 TO-220 AB C67078-S1316-A3 Maxim um Ratings Parameter Symbol Continuous drain current

Contextual Info: Ordering number : EN1628C 2SC3644 NPN Triple Diffused Planar Silicon Transistor SA\YO Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications i F eatures • High reliability Adoption of HVP process . • High speed. • High breakdown voltage.

Contextual Info: Ordering number : EN1626C _ k smiYo 2SC3642 NPN Triple Diffused P lanar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications I F e a tu re s • High reliability Adoption of HVP process . • High speed.

Contextual Info: Ordering number : EN4783 _ 2SC5045 NPN Triple Diffused P lan ar Silicon Transistor Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications F e a tu re s • High speed tf= 100ns typ . • High reliability (Adoption of HVP process).

Westinghouse diode

Abstract: kd32 1B2 diode
Contextual Info: 7294621 POWEREX INC 150 Amperes 4 5 0 /1 0 0 0 Volts b2 DE I 7E14tHl 0 0 0 D C134 Û f _ 0 T-33-35 Dual Darlington TRANSISTOR Modules Dim A B C D E F G H J K L M N P Inches 3.740 Max 3.150+ .010 .90 Dim A B C D E F G H J K L M N P Q R S T U Inches 4.250 Max

Transistor BJD

Abstract: 2SC3176 9At TRANSISTOR SC46 N0131
Contextual Info: Ordering num ber: EN1312B _ 2SC3176 N0.1312B NPN Epitaxial Planar Silicon Transistor CRT Horizontal Deflection Output Applications with Damper Diode F e a tu re s •Fast switching speed. • Especially suited for use in high-definition CRT display (Vcc = 12 to 24V),

2SC3643

Abstract: I321
Contextual Info: Ordering number: EN 1627B I _ No.1627B 2SC3643 NPN Triple Diffused Planar Silicon Transistor Ve r y Hig h -De f i n i t i o n Dis p l a y Ho r iz o n t a l De f l e c t io n Output Ap p l ic a t io n s Features . High reliability Adoption of HVP process

SOT-90B

Abstract: optocouplers 4n35 OPTOCOUPLER dc 4N35 4n35 optocoupler 4N36 SOT90B isolator IC 4N35 optocoupler 4N37
Contextual Info: 4N35 4N36 4N37 T O OPTOCOUPLERS Optically coupled isolators consisting o f an infrared emitting GaAs diode and a npn silicon photo­ transistor. They are suitable fo r use w ith TTL integrated circuits. Features • Fast switching speeds • Low saturation voltage

NJL5154

Abstract: RW 4060
Contextual Info: NJL5154D/54M HIGH VCE MINI PHOTO COUPLER • GENERAL DESCRIPTION OUTLINE typ. U nit: mm The N JL 5154D /M are small package dual-in-line photo couplers which consist o f high power infrared emitting diode and high sensitve, high collector emitter voltage Si photo transistor.

88-108mhz

Abstract: 300w amplifier 88-108mhz rf power 88-108mhz transistor k 385 M175 ALG TRANSISTOR SD1483 c 1685 transistor 108MHz 865 RF transistor
Contextual Info: r M I ? ^P roducts llr l/ C f l g M r» S Z ’f f Progresa Powered by Technology 140 C o m m e rc e D riv e M o n tg o m e ry v ille , PA 18936-1013 Tel: 2 1 5 6 3 1 -9 8 4 0 SD1483 RF & MICROWAVE TRANSISTORS FM BROADCAST APPLICATIONS FM CLASS C TRANSISTOR

vij smd diode

Contextual Info: International IOR Rectifier Provisional Data Sheet No. PD-9.1476 R E P E T IT IV E A V ALAN CHE A N D dv/dt R A TED IRHN2C50SE IRHN7C50SE HEXFET-TRANSISTOR N -C H A N N E L _ S IN G L E E V E N T E F F E C T S E E R A P H A R D 600 Volt, 0.60ft, (SEE) RAD HARD HEXFET

transistor f 421

Abstract: ASI10653 TVU150A 330d
Contextual Info: TVU150A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .450 BAL FLG B The ASI TVU150A is Designed for A B .120 x 45° FULL R FEATURES: C E D • Input Matching Network • • Omnigold Metalization System M .208 4X.060 R F .050 NOM. .210 G

Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TM O S E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy

2SC3447

Abstract: 200T FR57 25C312 1545B
Contextual Info: Ordering number:EN 1545B 2SC3447 NPN Triple Diffused Planar Silicon Transistor F or S w i t c h i n g Re g u l a t o r s Featrues - High breakdown voltage and high reliability • Fast switching speed tf: O.lps typ. • Wide ASO • Adoption of MBIT process

MTB29N15E-D

Abstract: S 170 MOSFET TRANSISTOR
Contextual Info: MOTOROLA Order this document by MTB29N15E/D SEMICONDUCTOR TECHNICAL DATA Product Preview MTB29N15E TMOS E-FET Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This advanced TM O S E -F E T is designed to w ithstand high energy in the avalanche and commutation modes. The new energy

3SK121

Abstract: 3SK114 SC4251 3SK150 S47B 3SK140 3SK152 3SK159 1SS241 DLP238
Contextual Info: T08H I 2. Discrete Semiconductors for Tuner 2-1 T ra n s is to rs a n d D iod e s fo r T u n e r ANT V R F Amp. r\ _L X £ osc 2-1-1 R F Amp. 2-1-2 M IX Dual Gat« P E T Bi-Transistor UHF VHF y -X S O T -1 4 3 *-X S O T -1 4 3 3SK114 3SK159 3SK152 3SK126 3SK160