TRANSISTOR ERA - 3 Search Results

ERA-51

Abstract: ERA-33 ERA-6 Mini-Circuits RF Amplifier ADCH-80 ADCH-80A AN-60-010 era-33 input capacitor 10 microhenry inductor
Contextual Info: IMPROVED ERA AMPLIFIERS AN-60-010 Introduction The improved Mini-Circuits ERA series of amplifiers offer the RF designer multi-stage performance in a package which looks like a discrete transistor. Improved ERA amplifiers advantages of wide bandwidth, impedance match, and a choice of gain and

146R

Abstract: CL146 T0-92B
Contextual Info: CL146 NPN A F LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR G EN ERA L DESCRIPTION T0-92B The CL146 is a NPNsilicon planar epitaxial transistor in plastic package designed for hearing aids, watches, paging systems and other equipment where small size is of paramount importance.

8uk453

Abstract: BUK453-60A BUK453-60B T0220AB
Contextual Info: PHILIPS IN T E R NA TI ON AL bSE D B 711Dfl2b D D m O B L Philips Semiconductors PowerMOS transistor G EN ERA L DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: BCW29 PNP EPITAXIAL SILICON TRANSISTOR G EN ERA L PU RPO SE TRANSISTO R SOT-23 ABSO LU TE MAXIMUM RATINGS TA=25t: Characteristic Collector-Base Voltage Coliector-Emitter Voltage Emitter-Base Voltage Collector Current Junction Temperature Storage Temperature

Contextual Info: AN-20-003 Super Wide-band RF Choke Purpose of the Product Use of Heterojunction Bipolar Transistor technology has resulted in development of super wide-band monolithic microwave amplifiers such as Mini-Circuits ERA series. These amplifiers cover a bandwidth

LB37

Contextual Info: KSH32/32C PNP EPITAXIAL SILICO N TRANSISTOR G EN ERA L PURPO SE AMPLIFIER LOW SP EED SWITCHING APPLICATIONS D-PACK FOR SU R FA CE MOUNT APPLICATIONS D-PAK h • Load Formed for Surface Mount Apptication No Suffix • Straight Lead (I.P AC K,1 “ Suffix)

Contextual Info: ¿57 SGS-THOMSON ¡m era « STHV102 STHV102FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STHV102 STHV102FI V dss RDS on Id 1000 V 1000 V < 3 .5 Q. < 3 .5 Q. 4.2 A 2.6 A • TYPICAL RDS(on) = 3.1 Q. . ■ . . . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: i., Ona. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5945 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .280 4L STUD FEATURES: 45"_s -, I C Era • Common Emitter • PG = 9.0 dB at 2.0 W/470 MHz

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP30N06 STP30N06FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP30N06 S TP30N06FI V dss RDS on Id 60 V 60 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: STP5N30 STP5N30FI V dss RDS on 300 V 300 V E D ED TYP E STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR A A ¿57 SGS-THOMSON ¡m era « Id 5 A 3.5 A . TYPICAL RDs(on) = 1.2 Q . . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E STP30N05 S TP30N05FI SGS-THOMSON ¡m era « STP30N05 STP30N05FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V dss RDS on Id 50 V 50 V < 0.05 Q. < 0.05 Q. 30 A 19 A . TYPICAL RDs(on) = 0.045 Q . AVALANCHE RUGGED TECHNOLOGY • 100% AVALANCHE TESTED

Contextual Info: BCW60A/B/C/D NPN EPITAXIAL SILICON TRANSISTOR G EN ERA L PU RPO SE TRANSISTO R SOT-23 ABSO LU TE MAXIMUM RATINGS TA= 2 5 t Characteristic Sym bol Cllector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Dissipation

Contextual Info: ¿57 SGS-THOMSON ¡m era « STP2N60 STP2N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E STP2N60 STP2N60FI V dss RDS on Id 600 V 600 V < 3 .5 Q. < 3 .5 Q. 2.9 A 2.2 A • TYPICAL RDS(on) = 3.2 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: ¿57 TYP E MTP3N60 MTP3N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR V MTP3N60 MTP3N60FI • . ■ . . SGS-THOMSON ¡m era « dss 600 V 600 V R DS on Id < 2.5 Q < 2.5 Q 3.9 A 2.5 A TYPICAL RDS(on) = 2 0 , AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

KT 805

Abstract: Wideband RF Chokes 1 microhenry rfc ERA-1SM ERA-6SM ERA-3SM ERA-5SM ADCH-80 ADCH-80A ERA-21SM
Contextual Info: BIASING MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which

bs170

Contextual Info: G en era l S e m i c o n d u c t o r _ BS170 DMOS Transistor N-Channel TO-226AA (TO-92) 0 . 1 8 1 (4 .6) 0 .1 4 2 (3 .6) Features_ • High input im pedance • High-speed switching • No m inority carrier storage tim e

Contextual Info: jt f K m W an A M P com pany Radar Pulsed Power Transistor, 25W, 100|is Pulse, 10% Duty 2.7 - 2.9 GHz PH2729-25M V2.00 Features • • • • • • • • NPN Silicon M icrow ave Pow er Transistor C o m m o n Base C on figuration B roadb an d C lass C O p era tio n

Contextual Info: BIASING OF CONSTANT CURRENT MMIC AMPLIFIERS e.g., ERA SERIES (AN-60-010) Introduction The Mini-Circuits family of microwave monolithic integrated circuit (MMIC) Darlington amplifiers offers the RF designer multi-stage performance in packages that look like a discrete transistor. Included in this family are the model prefixes to which

Contextual Info: INFRARED LED + PHOTO TRANSISTOR TLP816 TLP816 M OTOR ROTATION AND IRIS DETECTION FOR C A M ERA TRACK DETECTION OF M ICRO FLO PPY DISK DRIVE • • • • Very small package High resolution : Slit width 0.4mm Detection gap : 1mm Directly mountable on PCB using the stand off of lead

2N7000

Abstract: 2N7000/2N7000
Contextual Info: G en era l S e m ic o n d u c t o r * 2N7000 DMOS Transistor N-Channel DMOS Transistors v Features_ _ • High input impedance • Low gate threshold voltage • Low drain-source ON-resistance • High-speed switching • No minority carrier storage time

Contextual Info: ¿57 TYP E STP20N 10L S TP20N10LFI SGS-THOMSON ¡m era « STP20N10L STP20N10LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR V dss RDS on Id 100 V 100 V < 0.12 a < 0.12 a 20 A 12 A • TYPICAL RDS(on) = 0.09 Q . . AVALANCHE RUGGED TECHNOLOGY

Contextual Info: ¿ 5 SGS-THOMSON ¡m era « 7 STK12N05L STK12N06L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYP E STK12N 05L STK12N 06L V dss RDS on Id 50 V 60 V < 0.15 a < 0.15 a 12 A 12 A . TYPICAL RDs(on) = 0.115 Q . . AVALANCHE RUGGED TECHNOLOGY

12v dc choke circuit

Abstract: 1 microhenry inductor Transistor ERA - 3 rf choke ADCH-80A Micro-Henries ADCH-80 ERA monolithic amplifier ERa series Mini-Circuits ERA-1SM
Contextual Info: Super Wide-band RF Choke Purpose of the Product Use of Heterojunction Bipolar Transistor technology has resulted in development of super wide-band monolithic microwave amplifiers such as Mini-Circuits ERA series. These amplifiers cover a bandwidth from DC to 8 GHz. They need biasing current injected at the RF output port.

2SC2522

Abstract: 15D transistor 2SC2522A R2213 2C2523 2sa1073 2SC25 10ICI
Contextual Info: FUJITSU MICROEL ECT RONICS 31E D B 374=^2 DOlbSlfl 3 S F M I r - 22-13 E f t . r . S F : PRODUCT PROFILE " U H T i C U 2SC2522, 2C2522A, 2C2523 Silicon High Speed Power Transistor DESCRIPTION T he 2S C 2522/2S C 2522A/2SC 2523 are silicon NPN gen era l purpose, high pow er