TRANSISTOR EC5724 Search Results

TRANSISTOR EC5724 Result Highlights (5)

Part	Manufacturer	Description	Download
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723	Datasheet
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold	Datasheet
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TPCP8514	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8	Datasheet

TRANSISTOR EC5724 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BP 109 transistor Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724 Contextual Info: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made	Original	EC5724 EC5724 18GHz. 24dBm 30dBm 18GHz DSEC57247003 BP 109 transistor transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915	PDF
TRANSISTOR C 557 B Contextual Info: EC5724 W I D E B A N D P O W E R F ET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • Gain at 1dB compression point : single cell 600 urn : 8dB at 18GHz four cells (2400 [im) : 7dB at 18GHz • Output power at 1dB compression po in t: single cell (600nm) : 24dBm	OCR Scan	EC5724 600nm) 24dBm 30dBm 18GHz 18GHz EC5724 18GHz. EC5724-99A/00 TRANSISTOR C 557 B	PDF

Catalog Datasheet

Type

Document Tags

PDF

BP 109 transistor

Abstract: transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915 EC5724
Contextual Info: EC5724 Wide Band Power FET GaAs Field Effect Transistor Description S The EC5724 device,available in chip form, is a power GaAs Field Effect Transistor, designed for wideband oscillator and amplifier applications, up to 18GHz. Individual via hole connection is made

Original

EC5724 EC5724 18GHz. 24dBm 30dBm 18GHz DSEC57247003 BP 109 transistor transistor BP 109 transistor ec5724 transistor GaAs FET s parameters transistor BP 915

PDF

TRANSISTOR C 557 B

Contextual Info: EC5724 W I D E B A N D P O W E R F ET G a A s F I E L D E F F E C T T R A N S I S T O R FEATURES • Gain at 1dB compression point : single cell 600 urn : 8dB at 18GHz four cells (2400 [im) : 7dB at 18GHz • Output power at 1dB compression po in t: single cell (600nm) : 24dBm

OCR Scan

EC5724 600nm) 24dBm 30dBm 18GHz 18GHz EC5724 18GHz. EC5724-99A/00 TRANSISTOR C 557 B

PDF