TRANSISTOR DIFFERENTIAL AMPLIFIER Search Results

2SC1733

Abstract: 2SC1275 2SC127
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two

CA3054

Abstract: cascode transistor array CA3054M CA3054M96
Contextual Info: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential

CA3095E

Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
Contextual Info: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp

cascode transistor array

Abstract: NTE917
Contextual Info: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise

60GHz transistor

Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Contextual Info: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

2SK389

Abstract: 2-10M1A 2SJ109 1G100
Contextual Info: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.). Complementary to KTA2400.

SFC2741

Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
Contextual Info: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

CA3026

Abstract: CA3005 CA3006 CA3005 or CA3006 ca3054d CA3054E ca3026t a3026c ca3054
Contextual Info: D ifferential Am plifiers CA3026, CA3054 Transistor Array - Dual Independent Differential Amplifiers For Low Pow er A pplications at Frequencies from D C to 120 M H z Features • Two differential amplifiers on a common substrate ■ Independently accessible inputs and outputs

2SC1275

Abstract: 2sc1927
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION in millimeters consists of two chips equivalent to the 2SC1275, and is designed for 5.0 MIN.

NPN Monolithic Transistor Pair

Abstract: ULN2081A ULN2082A ULN-2081A ULN2083A ULN-2082A ULN-2083A uln driver circuit 14pin npn transistor transistor arrays
Contextual Info: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The U LN -2054A is a transistor array consisting of six N P N transistors on a single m onolithic chip. The transistors are internally interconnected to form two independent differential am ­

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION P A C K A G E D IM E N S IO N S The 2SC 1927 is an NPN silicon epitaxial dual transistor that

2SK389 equivalent

Abstract: 2SK389
Contextual Info: T O SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

4 npn transistor ic 14pin

Abstract: C10535E PA103 lowest noise audio NPN transistor
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:

2SK389

Abstract: 052-DB 2SJ109
Contextual Info: TO SH IB A 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 Unit in mm LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| =20m S Typ.

pspice

Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G UHF-1
Contextual Info: HFA3102 Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

10GHz oscillator

Abstract: Dual Long-Tailed Pair Transistor Array m14 transistor TRANSISTOR 10GHZ HFA3102 UPA102G TRANSISTOR ARRAY transistor array high frequency "pin to pin" HFA3102B
Contextual Info: HFA3102 TM Data Sheet August 1996 File Number 3635.2 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

MD7000

Abstract: 335 j chip die npn transistor 46bsc
Contextual Info: MD7000 SILICON MULTIPLE SILICON ANNULAR TRANSISTOR NPN SILICON MULTIPLE TRANSISTOR . . . designed fo r use as differential amplifiers, dual general-purpose amplifiers, fro n t end detectors and tem perature compensation appli­ cations. • Low Collector-E m itter Saturation Voltage —

HFA3102BZ96

Abstract: NE 7555 HFA3102 HFA3102B96 HFA3102BZ NF50 UPA102G
Contextual Info: HFA3102 Data Sheet July 14, 2005 FN3635.5 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

data sheet transistor 9018 NPN

Abstract: NE 7555 500E 800E HFA3102 HFA3102B HFA3102B96 NF50 UPA102G 12E-09
Contextual Info: HFA3102 TM Data Sheet September 2001 File Number 3635.3 Dual Long-Tailed Pair Transistor Array Features The HFA3102 is an all NPN transistor array configured as dual differential amplifiers with tail transistors. Based on Intersil bonded wafer UHF-1 SOI process, this array

Contextual Info: m 2N2920 \ \ SILICON NPN DUAL TRANSISTOR DESCRIPTION: The 2N2920 is a Dual Matched Transistor for General Purpose High Gain Low Noise Differential Amplifier Applications. PACKAGE STYLE TO-7 30 mA O m lc < MAXIMUM RATINGS 60 V P diss 500 mW @ TA = 25 °C