TRANSISTOR DIFFERENTIAL AMPLIFIER Search Results

2SC1733

Abstract: 2SC1275 2SC127
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC1733 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER INDUSTRIAL USE PACKAGE DIMENSIONS D E S C R IP T IO N in millimeters The 2SC1733 is an NPN silicon epitaxial dual transistor designed for use in high-frequency differential amplifier applications. Two

BFE505

Abstract: SOT353 transistor bf 175
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFE505 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor

BFE520

Abstract: SOT353 transistor MJE -1103 sot353b transistor bf 175
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BFE520 NPN wideband differential transistor Product specification Supersedes data of 1995 Sep 04 File under Discrete Semiconductors, SC14 1996 Oct 08 Philips Semiconductors Product specification NPN wideband differential transistor

transistor

Abstract: A 798 transistor high power npn UHF transistor Transistor Array differential amplifier TRANSISTOR d 718 gilbert cell differential pair 745 transistor NPN transistor transistor military differential pair transistor
Contextual Info: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E .

CA3054

Abstract: cascode transistor array CA3054M CA3054M96
Contextual Info: CA3054 S E M I C O N D U C T O R March 1993 Transistor Array - Dual Independent Differential Amp for Low Power Applications from DC to 120MHz Features Description • Two Differential Amplifiers on a Common Substrate The CA3054 consists of two independent differential

2sc1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS in millimeters The 2SC1927 is an NPN silicon epitaxial dual transistor that

Contextual Info: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA2400.

KTA2400

Abstract: KTC3400
Contextual Info: SEMICONDUCTOR KTA2400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=-120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.

KTC3400

Contextual Info: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ・Matched Pairs for Differential Amplifiers. A ・High Breakdown Voltage : VCEO=120V Min. . ・Low Noise : NF=1dB(Typ.), 10dB(Max.). ・Complementary to KTA2400.

BE160

Abstract: KTA2400 KTC3400
Contextual Info: SEMICONDUCTOR KTC3400 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTA2400.

KTA2400

Abstract: KTC3400
Contextual Info: SEMICONDUCTOR KTA2400 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES B C ᴌMatched Pairs for Differential Amplifiers. A ᴌHigh Breakdown Voltage : VCEO=-120V Min. . ᴌLow Noise : NF=1dB(Typ.), 10dB(Max.). ᴌComplementary to KTC3400.

CA3095E

Abstract: CA3095 cascode transistor array AN-D02 NPN pnp MATCHED PAIRS array
Contextual Info: File No. 591 Linear Integrated Circuits Solid State Monolithic Silicon Division CA3095E Super-Beta Transistor Array Differential Cascode A m plifier Plus 3 Independent Transistors Applications Differential Cascode Amplifier: • Super-beta pre-amplifier for op-amp

cascode transistor array

Abstract: NTE917
Contextual Info: NTE917 Integrated Circuit Dual, Independent Transistor Array, Differential Amp Description: The NTE917 is an integrated circuit consisting of two independent differential amplifiers with associated constant−current transistors on a common monolithic substrate. The six NPN transistors which comprise

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTA2400 EPITAXIAL PLANAR PNP TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V ceo = - 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.). Complementary to KTC3400.

60GHz transistor

Abstract: SFT-9400B InP transistor HEMT 60Ghz SFT9400B OC-768 98T2 InP HBT transistor low noise
Contextual Info: SFT-9400B SFT-9400B 60GHz Differential Input Transimpedance Amplifier 60GHz DIFFERENTIAL INPUT TRANSIMPEDANCE AMPLIFIER Product Description Features RFMD’s SFT-9400B is a high performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE

2SK389

Abstract: 2-10M1A 2SJ109 1G100
Contextual Info: TOSHIBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

4 npn transistor ic 14pin

Abstract: 8 npn transistor ic 14pin C10535E UPA102G
Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package

KTA2400

Abstract: KTC3400
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.).

2SK389

Abstract: 2SJ109
Contextual Info: TO SH IBA 2SK389 TOSHIBA DUAL FIELD EFFECT TRANSISTOR SILICON MONOLITHIC N CHANNEL JUNCTION TYPE 2SK389 LOW NOISE AUDIO AND DIFFERENTIAL AMPLIFIER APPLICATIONS. 1 Chip Dual Type. Recommended for First Differential Stages of DC Amplifiers. Very High |Yfs| : |Yfs| = 20mS Typ.

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTC3400 EPITAXIAL PLANAR NPN TRANSISTOR DIFFERENTIAL AMP. APPLICATION. FEATURES • • • • Matched Pairs for Differential Amplifiers. High Breakdown Voltage : V c e o = 120V Min. . Low Noise : NF=ldB(Typ.), 10dB(Max.). Complementary to KTA2400.

SFC2741

Abstract: sfc2741c TRANSISTOR REPLACEMENT GUIDE ULN2081A ULN2083 array SFC2741DC TDA1200 LM1307N MC1305P CA1310E
Contextual Info: SPRAGUE T ES T TYPE ULN-2054A DUAL INDEPENDENT DIFFERENTIAL AMPLIFIERS The ULN-2054A is a transistor array consisting of six NPN transistors on a single monolithic chip. The transistors are internally interconnected to form two independent differential am­

2SC1275

Abstract: 2SC1926
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1275

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1927 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1927 is an NPN silicon epitaxial dual transistor that in millimeters

2SC1926

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR 2SC1926 NPN SILICON EPITAXIAL DUAL TRANSISTOR FOR DIFFERENTIAL AMPLIFIER AND ULTRA HIGH SPEED SWITCHING INDUSTRIAL USE D E S C R IP T IO N PACKAGE DIMENSIONS The 2SC1926 is an NPN silicon epitaxial dual transistor that in millimeters