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    TRANSISTOR DAY Search Results

    TRANSISTOR DAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Datasheet
    TTC5886A
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Datasheet
    TTA2097
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Datasheet
    TTA011
    Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini Datasheet
    TPCP8513
    Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8 Datasheet

    TRANSISTOR DAY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    foto sensor

    Abstract: optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263
    Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


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    GPXY6052 foto sensor optical interrupter darlington gabellichtschranke datasheet ic 4060 Fototransistor Q62702-P5263 PDF

    foto sensor

    Abstract: Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter
    Contextual Info: Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Wesentliche Merkmale • Kompaktes Gehäuse • GaAs-IR-Sendediode • Si-Foto Darlington-Transistor mit Tageslichtsperrfilter • Hoher Koppelfaktor


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    GPX06992 foto sensor Fototransistor opto counter Opto Interrupter slotted 1/IRF 9330 gabellichtschranke Q62702-P5263 w 9330 opto sensor counter PDF

    4 npn transistor ic 14pin

    Abstract: lowest noise audio NPN transistor C10535E PA104 MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY
    Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA104 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • 9 GHz CONFIGURABLE TRANSISTOR BASED OR/NOR CIRCUITRY • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA104B: Studded ceramic package provides superior thermal dissipation


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    PA104 PA104B: PA104G: 14-pin PA104 4 npn transistor ic 14pin lowest noise audio NPN transistor C10535E MICRO-X TRANSISTOR MARK Q6 8 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY PDF

    nj TRANSISTOR

    Abstract: 450KW
    Contextual Info: 3mm Silicon PNP Photo Transistor Dialight 551-7610 1.57 [.062] 4.32 [.170] 7.11 .280 Features 6.35 [.250] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability 3.00 [.118] DIA. 5.08 [.200]


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    MIL-STD-202E, nj TRANSISTOR 450KW PDF

    nj TRANSISTOR

    Contextual Info: NEW 3mm Infrared Discrete LED Silicon PNP Photo Transistor Dialight 521-9740 Features 5.18 [.204] 4.09 [.161] .79 [.031] .61 [.024] SQ. .71 [.028] • Silicon PNP type transistor • Narrow acceptance angle • Daylight filtered • Good linearity • High reliability


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    MIL-STD-202E, nj TRANSISTOR PDF

    u101b

    Contextual Info: DATA SHEET COMPOUND TRANSISTOR _ j f P A 101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES OUTLINE DIMENSIONS Units in mm • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


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    uPA101B 14-pin tPA101G u101b PDF

    4 npn transistor ic 14pin

    Abstract: 8 npn transistor ic 14pin C10535E UPA102G
    Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • TWO BUILT-IN DIFFERENTIAL AMPLIFIER CIRCUITS: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA102B: Superior thermal dissipation due to studded 14-pin ceramic package


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    PA102 PA102B: 14-pin PA102G: PA102 4 npn transistor ic 14pin 8 npn transistor ic 14pin C10535E UPA102G PDF

    4 npn transistor ic 14pin

    Abstract: MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6
    Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA101 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • BUILT-IN ULTRAHIGH FREQUENCY MULTIPLIER: Each Transistor has fT 9 GHz • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS: µPA101B: Superior thermal dissipation due to studded 14-pin ceramic package


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    PA101 PA101B: 14-pin PA101G: PA101B-E1 4 npn transistor ic 14pin MIL GRADE TRANSISTOR ARRAY C10535E Silicon Bipolar Transistor Q6 MICRO-X TRANSISTOR MARK Q6 PDF

    Contextual Info: DATA SHEET NEC COMPOUND TRANSISTOR _jfPA102 HIGH FREQUENCY NPN TRANSISTOR ARRAY OUTLINE DIMENSIONS Units in mm FEATURES • TW O BUILT-IN DIFFER EN TIA L AM PLIFIER CIRCUITS: • OUTSTANDING hFE LINEARITY • TW O PACKAGE O PTIO NS: (Each Transistor has fr 9 GHz)


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    uPA102 PA102B: PA102G: 14-pin PA102 PDF

    Contextual Info: 3mm Silicon PNP Photo Transistor Dîalî ght 551-7610 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability ABSO LU TE MA X IM U M RATINGS TA=25°C O perating and Storage Tem perature Range (°C)


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    450kW MIL-STD-202E, PDF

    transistor 9740

    Contextual Info: Dia light Infrared Discrete LED Silicon PNP Photo Transistor 521 -9740 Features • • • • • Silicon PNP type transistor Narrow acceptance angle Daylight filtered Good linearity High reliability A B S O L U T E M A X IM U M R A T IN G S TA=25°C Operating and Storage


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    MIL-STD-202E, transistor 9740 PDF

    2N6055

    Contextual Info: 2N6055 Darlington complementary silicon power transistor 15.26 Transistors Darlington . Page 1 of 1 Enter Your Part # Home Part Number: 2N6055 Online Store 2N6055 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


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    2N6055 2N6055 com/2n6055 PDF

    2N6056

    Abstract: ALL SILICON COMPLEMENTARY transistors darlington
    Contextual Info: 2N6056 Darlington complementary silicon power transistor 8.63 Transistors Darlington T. Page 1 of 2 Enter Your Part # Home Part Number: 2N6056 Online Store 2N6056 Diodes Darlington complementary silicon power transistor Transistors Integrated Circuits Optoelectronics


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    2N6056 2N6056 com/2n6056 ALL SILICON COMPLEMENTARY transistors darlington PDF

    486DX-CPU

    Abstract: tamagawa 486DX transistors mos retrograde well 0.35
    Contextual Info: MOS Scaling: Transistor Challenges for the 21st Century Scott Thompson, Portland Technology Development, Intel Corp. Paul Packan, Technology Computer Aided Design, Intel Corp. Mark Bohr, Portland Technology Development, Intel Corp. Index words: SDE, transistor, scaling


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    PDF

    Contextual Info: Opto Semiconductors Gabellichtschranke mit Fotodarlington Transistor Slotted Interrupter with Photodarlington Transistor SFH 9330 Vorläufige Daten/Preliminary Data 12.52 12.12 optical axis 6.68 6.28 Sensor 0.6 0.4 2 9.0 8.2 2.54 Circuitry 3 1 4 GPX06992 fpx06992


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    GPX06992 fpx06992 OHFD00367 OHF00372 OHF00410 PDF

    2n6318

    Contextual Info: 2N6318 80 V complementary PNP silicon power transistor 8.50 Transistors Transistors B. Page 1 of 2 Enter Your Part # Home Part Number: 2N6318 Online Store 2N6318 Diodes 80 V complementary PNP silicon power transistor Transistors Integrated Circuits Optoelectronics


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    2N6318 2N6318 com/2n6318 PDF

    4 npn transistor ic 14pin

    Abstract: C10535E PA103 lowest noise audio NPN transistor
    Contextual Info: DATA SHEET COMPOUND TRANSISTOR µPA103 HIGH FREQUENCY NPN TRANSISTOR ARRAY FEATURES • FIVE MONOLITHIC 9 GHz fT TRANSISTORS: Two of these use a common emitter pin and can be used as differential amplifiers • OUTSTANDING hFE LINEARITY • TWO PACKAGE OPTIONS:


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    PA103 PA103B: PA103G: 14-pin PA103 4 npn transistor ic 14pin C10535E lowest noise audio NPN transistor PDF

    phototransistor 302

    Abstract: photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor
    Contextual Info: OST-302 PHOTO TRANSISTOR • General Description The OST-302 is high sensitivity NPN silicon photo-transistor mounted in a black side-looking package , is compact , low profile and easy to mount. ■ Features ˙Compact ˙Low profile package ˙Low cost plastic package


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    OST-302 OST-302 1000Lux 2000Lux 2856K phototransistor 302 photo transistor high current PHOTO TRANSISTOR A 720 transistor TRansistor A 940 Rise time of photo transistor 720 transistor 302 phototransistor npn photo transistor PDF

    2n4037 transistor

    Abstract: NPN Transistor 2n4037 2n4037
    Contextual Info: 2N4037 Medium Power Silicon N-P-N Planar Transistor. 6.90 Transistor. 1 of 1 Home Part Number: 2N4037 Online Store 2N4037 Diodes M edium Po w er Silic o n N- P- N Planar Trans is t o r. Transistors


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    2N4037 com/2n4037 2N4037 2n4037 transistor NPN Transistor 2n4037 PDF

    transistor AR17

    Abstract: CPM1A-30CDR-D counter pv read wiring diagram OMRON CPM1A-30CDR plc omron CPM2A omron cpm1a-40cdr AR2113 OMRON CPM1A-30CDR OMRON cpm2a manual CPM2C-CN111
    Contextual Info: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs CPU Units with 20 I/O points Transistor outputs Transistor outputs Supply voltage 24 VDC Operating voltage range 20.4 to 26.4 VDC Power consumption 4 W (CPU Unit only)


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    075-mm AT28C256 transistor AR17 CPM1A-30CDR-D counter pv read wiring diagram OMRON CPM1A-30CDR plc omron CPM2A omron cpm1a-40cdr AR2113 OMRON CPM1A-30CDR OMRON cpm2a manual CPM2C-CN111 PDF

    Contextual Info: Photo Transistor Product No: M T D8000N4-T Peak Sensitivity Wavelength: 880nm The MTD8000N4-T is a photo transistor in a TO-18 metal can domed package. It is well suited for high reliability and high sensitivity applications. FEATURES APPLICATIONS > High Reliability in Demanding Environments


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    D8000N4-T 880nm MTD8000N4-T PDF

    CPM2C-24EDT

    Abstract: CPM1A-10CDR-D CPM2A programming cable CPM1A-20CDR-D CPM2A-20CDR-D CPM2A-30CDR-D cpm1a cable CS1W-CN118 CPM2C-16ET CPM2C-CIF11
    Contextual Info: CPM2C Specifications CPM2C General Specifications CPU Units with 10 I/O points Item Relay outputs CPU Units with 20 I/O points Transistor outputs Transistor outputs Supply voltage 24 VDC Operating voltage range 20.4 to 26.4 VDC Power consumption 4 W (CPU Unit only)


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    075-mm CPM2C-CIF01 CPM2C-CIF11 CPM2C-24EDT CPM1A-10CDR-D CPM2A programming cable CPM1A-20CDR-D CPM2A-20CDR-D CPM2A-30CDR-D cpm1a cable CS1W-CN118 CPM2C-16ET PDF

    D45 TRANSISTOR

    Abstract: MARKING d45 2SD2228
    Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON DEVICE - — ^ 2SD2228 NPN SILICON EPTAXIAL TRANSISTOR AUDIO FREQUENCY AMPLIFIER DESCRIPTION The 2SD2228 is designed fo r general-purpose applications requiring High DC Current and Low Collector Saturation Voltage. This is suitable fo r appliances including VCR cameras and headphone stereos.


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    2SD2228 IEI-1209) D45 TRANSISTOR MARKING d45 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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