TRANSISTOR D9D Search Results

D9D TRANSISTOR

Abstract: SOT-23 marking D9D marking D9D d9d marking code transistor D9D npn D9D
Contextual Info: UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

VRF148A

Abstract: 2204B M113 MRF148A 647s
Contextual Info: VRF148A 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF150

Abstract: J101 0-12V 2204B MRF150 VK200-4B Transistor C2
Contextual Info: VRF150 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

transformer 0-12v

Abstract: J101 0-12V 2204B MRF151 VRF151 Transistor C2 Unelco J101
Contextual Info: VRF151 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF141

Abstract: 28v 30MHZ MRF141 2204B
Contextual Info: VRF141 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF151 VRF151MP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

MRF148A

Contextual Info: VRF148A VRF148AMP 50V, 30W, 175MHz RF POWER VERTICAL MOSFET The VRF148A is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF150 VRF150MP 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF141 VRF141MP 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VK200-4B

Contextual Info: VRF161 MP 50V, 200W, 150MHz RF POWER VERTICAL MOSFET The VRF161 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

Contextual Info: VRF141 G VRF141MP(G) 28V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF141 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

VRF151G

Abstract: current transformer accuracy class 0,6 b 0,1 c10 transformer 0-12v
Contextual Info: VRF151 G VRF151MP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

vrf150

Abstract: MRF150
Contextual Info: VRF150 G VRF150MP(G) 50V, 150W, 150MHz RF POWER VERTICAL MOSFET The VRF150 is a gold-metallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without compromising reliability, ruggedness, or inter-modulation

transformer 0-12v

Contextual Info: VRF151E G VRF151EMP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without

ic 6 pin smd for power supply led

Abstract: transistor D13003 X D13003
Contextual Info: Innovative PowerTM ACT364 DESIGN GUIDE Mar 2011 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs August 2012 Copyright 2012 Active-Semi, Inc. - - www.active-semi.com www.active-semi.com LED DESIGN GUIDE

LED lighting

Abstract: transistor D13003 X D13003X 12v transformer winding formula 12V 1A Transformer specification 23/10V 3W LED DRIVER
Contextual Info: Innovative PowerTM ACT364 DESIGN GUIDE Jun 2014 Innovative LED Solutions AC/DC LED Lighting PRODUCT SELECTION GUIDE LED Lighting Reference Rev3.1 Apr 2011 Designs June 2014 Copyright 2014 Active-Semi International, Inc. - - www.active-semi.com www.active-semi.com

D9D TRANSISTOR

Abstract: transistor d9d
Contextual Info: Preliminary Data Sheet P D -2.382 rev. A 05/97 International TOR Rectifier H F A 0 6 T B 120 HEXFRED Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V Ultrafast Recovery Ultrasoft Recovery Very Low lRRM Very LowQrr Guaranteed Avalanche

MIC5400

Contextual Info: MIC5400 Micrel MIC5400 Dual, 8-Output, 14-Bit LED Video Display Driver Preliminary Information General Description Features The MIC5400 consists of 2 banks of 8 LED driver outputs, each output capable of sinking up to 30mA. Each bank is intended to drive 8 LED pixels of the same color. Most

MIC5400

Abstract: MIC5400CWM
Contextual Info: MIC5400 Micrel MIC5400 Dual, 8-Output, 14-Bit LED Video Display Driver Preliminary Information General Description Features The MIC5400 consists of 2 banks of 8 LED driver outputs, each output capable of sinking up to 30mA. Each bank is intended to drive 8 LED pixels of the same color. Most

MIC5400

Contextual Info: MIC5400 Micrel MIC5400 Dual, 8-Output, 14-Bit LED Video Display Driver Preliminary Information General Description Features The MIC5400 consists of 2 banks of 8 LED driver outputs, each output capable of sinking up to 30mA. Each bank is intended to drive 8 LED pixels of the same color. Most