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    VRF151E Search Results

    VRF151E Datasheets (1)

    Microsemi
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    VRF151E
    Microsemi RF MOSFET (VDMOS) for 50V operation; P(out) (W): 150; P(in) (W): 6; Gain (dB): 14; VDD (V): 50; Coss (pF): 220; Case Style: M174 Original PDF 123.35KB 4

    VRF151E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    transformer 0-12v

    Contextual Info: VRF151E G VRF151EMP(G) 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    vrf151evrf151emp175mhzvrf151+4m174a30mhzsd2931-10transformer 0-12v PDF

    VK200-4B

    Abstract: 1UF 50V SMT CASE C J101 VRF151 0-12V 2204B SD2931-10 VRF151E SD2931-10W
    Contextual Info: VRF151E 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    vrf151e175mhzvrf151m174a+930mhzsd2931-10rohs96vk200-4b1uf 50v smt case cj1010-12v2204bsd2931-10w PDF

    SD2931-10

    Abstract: VRF151 RF POWER TRANSISTOR 150w 2204B VRF151E VRF151EMP VK200-4B
    Contextual Info: VRF151E VRF151EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    vrf151evrf151emp175mhzvrf151+7m174a30mhzsd2931-10im096rf power transistor 150w2204bvk200-4b PDF

    Contextual Info: VRF151E VRF151EMP 50V, 150W, 175MHz RF POWER VERTICAL MOSFET The VRF151E is a thermally-enhanced version of the VRF151. It is a goldmetallized silicon n-channel RF power transistor designed for broadband commercial and military applications requiring high power and gain without


    Original
    vrf151evrf151emp175mhzvrf151+3m174a30mhzsd2931-10 PDF

    SP6-P

    Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
    Contextual Info: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original
    10f-asp6-pn-channel mosfet 800v 50a to-247smps 1000w igbt reference design+7drf140045a, 1200v n-channel npt series igbtaptes80da120c3gapt35dl120hjsemiconductors cross referenceigbt triple modules 100a2000w mosfet power inverter PDF