TRANSISTOR D55 Search Results

D5510

Abstract: BTD5510F3 transistor 406 specification BTD5510
Contextual Info: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date :2006.11.29 Page No. : 1/3 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

Contextual Info: ObE D N AMER PHILIPS/DISCRETE 8 6 0 1 1 9 3 6 D • bb53T31 0014174 4 ■ r - BLY91A I V i. V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor for use in class-A, B and C operated mobile, industrial and m ilitary transmitters w ith a nominal supply voltage of 28 V . The transistor is resistance stabilized and

D5510

Abstract: darlington transistor C 3300 BTD5510F3
Contextual Info: Spec. No. : C658F3 Issued Date : 2005.08.23 Revised Date : Page No. : 1/5 CYStech Electronics Corp. NPN Epitaxial Planar Transistor BTD5510F3 Description The BTD5510F3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed switching application.

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

KD421K10

Contextual Info: KD421K10_ Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 D U S l D s r H n Q tO il Transistor Module 100 Amperes/1000 Volts O U T L I N E DRAW ING Description: The Powerex Dual Darlington Transistor Modules are high power

A9M15

Abstract: AFT09MS015N TRANSISTOR Z10 D55295 815 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 1, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS015N Rev. 0, 2/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS015NT1 Designed for mobile two-way radio applications with frequencies from 136

LL1608-FHN2K

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

MRFG35010M

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

transistor marking z11

Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet

D55342M07B

Abstract: 100B102JP500X rick miller MRFG35010M LL-210 D55342M07
Contextual Info: Freescale Semiconductor Technical Data Available at http://www.freescale.com/rf, Go to Tools Rev. 1, 6/2005 RF Reference Design Library Gallium Arsenide PHEMT MRFG35010NT1 MRFG35010MT1 BWA RF Power Field Effect Transistor Device Characteristics From Device Data Sheet

Mancini* CFA

Abstract: 250N HA5023 HARRIS SEMICONDUCTOR Mancini DP104
Contextual Info: Harris Semiconductor No. MM5023 Harris Linear May 1996 HA5023 SPICE Macromodel CFA Authors: Ronald Mancini and Steve Jost Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

Mancini

Abstract: Mancini* CFA 250N HA5025 HARRIS SEMICONDUCTOR MM5025
Contextual Info: Harris Semiconductor No. MM5025.1 Harris Linear September 1996 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

transistor D55

Contextual Info: m m oEK Powerex, Inc., 200 Hfflis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 KD421K10 Dual Darlington Transistor Module 100 Amperes/1000 Volts Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified Ratings Junction Temperature Storage Temperature

Contextual Info: MOTOROLA Available at: Available at http://www.motorola.com/rf, Go to Tools SEMICONDUCTOR TECHNICAL DATA RF Reference Design Library The RF GaAs Line MRFG35003MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

Mancini* CFA

Abstract: 250N HA5025 BF180
Contextual Info: Harris Semiconductor No. MM5025.2 Harris Linear August 1997 HA5025 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. Additional components are added to

250N

Abstract: HA5022
Contextual Info: Harris Semiconductor No. MM5022 Harris Linear April 1996 HA5022 SPICE Macromodel CFA Authors: Ronald Mancini and Jeff Lies Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

db14g

Abstract: CDR33BX104AKWS MRFG35010MT1 T491X226K035AS LL1608-FHN2K 85dBp MRFG35010M
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35010MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet

250N

Abstract: HA5024 BF180 dp104
Contextual Info: Harris Semiconductor No. MM5024.1 Harris Linear September 1996 HA5024 SPICE Macromodel CFA Authors: Ronald Mancini and Don LaFontaine Introduction The topology of the input buffer section is a basic four transistor voltage follower. This configuration was used in order

MRFG35005MT1

Abstract: CDR33BX104AKWS T491X226K035AS 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM LL-210
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA Available at http://www.motorola.com/rf, Go to Tools RF Reference Design Library The RF GaAs Line MRFG35005MT1 BWA Gallium Arsenide PHEMT RF Power Field Effect Transistor DEVICE CHARACTERISTICS From Device Data Sheet