NP100P04PLG-E1-AY
Abstract: MP-25ZP NP100P04PLG NP100P04PLG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PLG-E1-AY
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NP100P04PLG
NP100P04PLG
NP100P04PLG-E1-AY
NP100P04PLG-E2-AY
O-263
MP-25ZP)
O-263)
NP100P04PLG-E1-AY
MP-25ZP
NP100P04PLG-E2-AY
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NP100P04PDG
Abstract: NP100P04PDG-E2-AY MP-25ZP NP100P04PDG-E1-AY PT1200
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P04PDG-E1-AY
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NP100P04PDG
NP100P04PDG
NP100P04PDG-E1-AY
NP100P04PDG-E2-AY
O-263
MP-25ZP)
O-263)
NP100P04PDG-E2-AY
MP-25ZP
NP100P04PDG-E1-AY
PT1200
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NP100P06PDG
Abstract: NP100P06PDG-E1-AY MP-25ZP NP100P06PDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PDG-E1-AY
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NP100P06PDG
NP100P06PDG
NP100P06PDG-E1-AY
NP100P06PDG-E2-AY
O-263
MP-25ZP)
O-263)
NP100P06PDG-E1-AY
MP-25ZP
NP100P06PDG-E2-AY
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TF230
Abstract: NP50P04KDG NP50P04KDG-E1-AY NP50P04KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY Note
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NP50P04KDG
NP50P04KDG
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
O-263
MP-25ZK)
O-263)
TF230
NP50P04KDG-E1-AY
NP50P04KDG-E2-AY
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m249
Abstract: NP83P06PDG NP83P06PDG-E1-AY MIS1 MP-25ZP NP83P06PDG-E2-AY M83A
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P06PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP83P06PDG-E1-AY Note
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NP83P06PDG
NP83P06PDG
NP83P06PDG-E1-AY
NP83P06PDG-E2-AY
O-263
MP-25ZP)
O-263)
m249
NP83P06PDG-E1-AY
MIS1
MP-25ZP
NP83P06PDG-E2-AY
M83A
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NP100P06PLG
Abstract: MP-25ZP NP100P06PLG-E1-AY NP100P06PLG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP100P06PLG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP100P06PLG-E1-AY
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NP100P06PLG
NP100P06PLG
NP100P06PLG-E1-AY
NP100P06PLG-E2-AY
O-263
MP-25ZP)
O-263)
MP-25ZP
NP100P06PLG-E1-AY
NP100P06PLG-E2-AY
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NP50P06KDG
Abstract: NP50P06KDG-E1-AY NP50P06KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY Note
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NP50P06KDG
NP50P06KDG
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
O-263
MP-25ZK)
O-263)
NP50P06KDG-E1-AY
NP50P06KDG-E2-AY
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NP36P06KDG
Abstract: NP36P06KDG-E1-AY NP36P06KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P06KDG-E1-AY Note
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NP36P06KDG
NP36P06KDG
NP36P06KDG-E1-AY
NP36P06KDG-E2-AY
O-263
MP-25ZK)
O-263)
NP36P06KDG-E1-AY
NP36P06KDG-E2-AY
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NP36P04KDG
Abstract: NP36P04KDG-E1-AY NP36P04KDG-E2-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP36P04KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP36P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP36P04KDG-E1-AY Note
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NP36P04KDG
NP36P04KDG
NP36P04KDG-E1-AY
NP36P04KDG-E2-AY
O-263
MP-25ZK)
O-263)
NP36P04KDG-E1-AY
NP36P04KDG-E2-AY
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m249
Abstract: NP83P04PDG MP-25ZP NP83P04PDG-E1-AY NP83P04PDG-E2-AY CTF100
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP83P04PDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP83P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP83P04PDG-E1-AY Note
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NP83P04PDG
NP83P04PDG
NP83P04PDG-E1-AY
NP83P04PDG-E2-AY
O-263
MP-25ZP)
O-263)
m249
MP-25ZP
NP83P04PDG-E1-AY
NP83P04PDG-E2-AY
CTF100
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NP70N04MUG
Abstract: 70N04 NP70N04MUG-S18-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING
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NP70N04MUG
NP70N04MUG
NP70N04MUG-S18-AY
O-220
MP-25K)
O-220)
70N04
NP70N04MUG-S18-AY
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D1866
Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING
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NP70N04MUG
NP70N04MUG
NP70N04MUG-S18-AY
O-220
MP-25K)
O-220)
D1866
70n04
NP70N04MUG-S18-AY
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NEC 60N04
Abstract: 60n04 NP60N04MUG NP60N04MUG-S18-AY D1866 np60n04mug-s18 NEC+60N04 NEC LOT CODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP60N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP60N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP60N04MUG-S18-AY LEAD PLATING
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NP60N04MUG
NP60N04MUG
NP60N04MUG-S18-AY
O-220
MP-25K)
O-220)
NEC 60N04
60n04
NP60N04MUG-S18-AY
D1866
np60n04mug-s18
NEC+60N04
NEC LOT CODE
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D1866
Abstract: 70n04 NP70N04MUG NP70N04MUG-S18-AY NEC MARKING CODE
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR NP70N04MUG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP70N04MUG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP70N04MUG-S18-AY LEAD PLATING
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NP70N04MUG
NP70N04MUG
NP70N04MUG-S18-AY
O-220
MP-25K)
O-220)
D1866
70n04
NP70N04MUG-S18-AY
NEC MARKING CODE
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D1864
Abstract: BTD1864I3 BTB1243I3
Contextual Info: CYStech Electronics Corp. Spec. No. : C848I3 Issued Date : 2003.04.18 Revised Date : 2004.06.30 Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1864I3 Features • Low VCE sat • Excellent current gain characteristics • Complementary to BTB1243I3
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C848I3
BTD1864I3
BTB1243I3
O-251
UL94V-0
D1864
BTD1864I3
BTB1243I3
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d2396
Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .
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2SK2503
RK7002
TC363TS
DTC314TS
TC114G
100mA
TA124G
DTC144G
d2396
TRANSISTOR PNP B1443
D2396 equivalent
B1569A
TRANSISTORS PNP 50 V 1 A B1443
B1186A
transistor c5147
b1344
transistor equivalent b1443
K2460
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D1864
Abstract: BTD1864AI3 C849I3
Contextual Info: Spec. No. : C849I3 Issued Date : 2003.04.18 Revised Date : Page No. : 1/4 CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1864AI3 Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A • Excellent current gain characteristics
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C849I3
BTD1864AI3
BTB1243AI3
O-251
UL94V-0
D1864
BTD1864AI3
C849I3
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transistor D1862
Abstract: D1862 BTB1240I3 BTD1862I3
Contextual Info: CYStech Electronics Corp. Spec. No. : C842I3 Issued Date : 2003.07.02 Revised Date : Page No. : 1/4 Low Vcesat NPN Epitaxial Planar Transistor BTD1862I3 Features • Low VCE sat , VCE(sat)=0.4 V (typical), at IC / IB = 2A / 0.5A • Excellent current gain characteristics
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C842I3
BTD1862I3
BTB1240I3
O-251
UL94V-0
transistor D1862
D1862
BTB1240I3
BTD1862I3
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d1863
Abstract: 2SK4091 2SK4091-ZK 2SK4091-ZK-E1-AY 2SK4091-ZK-E2-AY 6602 mos C595C 2SK40
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4091 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4091 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4091
2SK4091
-S27-AY
2SK4091-ZK-E1-AY
2SK4091-ZK-E2-AY
O-251
d1863
2SK4091-ZK
2SK4091-ZK-E1-AY
2SK4091-ZK-E2-AY
6602 mos
C595C
2SK40
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D1863
Abstract: 2SK4090 2SK4090-ZK 2SK4090-ZK-E1-AY 2SK4090-ZK-E2-AY mp3b
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4090 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4090 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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2SK4090
2SK4090
-S27-AY
2SK4090-ZK-E1-AY
2SK4090-ZK-E2-AY
O-251
D1863
2SK4090-ZK
2SK4090-ZK-E1-AY
2SK4090-ZK-E2-AY
mp3b
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TRANSISTOR d1760
Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type
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2SD1760/2SD1864/2SD1762
2SB1184/2SB1243
/2SB1185.
2SD1760
2SD1864
65Max.
SC-63
2SD1762
2sd1760
2sd1864
TRANSISTOR d1760
TRANSISTOR d1762
D1762
D1864
d1760
d1760 NPN Transistor
2SD1762
transistor 1002
d1762 f g
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TC518512
Abstract: transistor D195
Contextual Info: TOSHIBA TC518512PL/FL/FTL/rRL-70LV/80LV/10LV SILICON GATE CMOS 524,288 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518512PL is a 4M bit high speed CMOS pseudo static RAM organized as 524,288 w ords by 8 bits. The TC518512PL utilizes a one transistor dynamic memory cell with CMOS peripheral circuitry to provide high capacity, high speed and low pow er
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TC518512PL/FL/FTL/rRL-70LV/80LV/10LV
TheTC518512PL
TC518512PL
TC518512PL-LV
D-194
TC518512PL/FL/FTL/TRL-70LV/80LV/1OLV
D-195
TC518512
transistor D195
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transistor cross reference
Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC
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D128 transistor
Abstract: transistor D128 PT16580-LQ transistor D113 D114 TRANSISTOR transistor D195 TRANSISTOR D114 PT16580 transistor D132 transistor d155
Contextual Info: PT16580 General Purpose LCD Driver IC DESCRIPTION PT16580 is an LCD Driver IC which can drive up to 200 segments. It can be used for frequency display in microprocessor-controlled radio receiver and in other display applications. PT16580 supports both 1/3 duty,
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PT16580
PT16580
MS-026BCD.
D128 transistor
transistor D128
PT16580-LQ
transistor D113
D114 TRANSISTOR
transistor D195
TRANSISTOR D114
transistor D132
transistor d155
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