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Contextual Info: Part Number: Integra IB1011M70 Preliminary TECHNOLOGIES, INC. L-Band Avionics Transistor Silicon Bipolar − Ultra-high fT The high power pulsed avionics transistor part number IB1011M70 is designed for L-Band avionics systems operating at 1030 and 1090 MHz.
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D1790
Contextual Info: Part Number: Integra IB1011S70 TECHNOLOGIES, INC. Silicon Bipolar − Ultra-high fT L-Band Avionics Transistor Class C Operation − High Efficiency The high power pulsed avionics transistor device part number IB1011S70 is designed for L-Band radar systems operating
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2SD1614
Abstract: NEC silicon epitaxial power transistor NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1614 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sd1614d17973ej3v0ds00tc-1649ad17973ej3v0ds+2nec silicon epitaxial power transistornec systems
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1115a
Abstract: D1794 2SB1115 1115A ics NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1115, 1115A PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sb1115d17940ej3v0ds00tc-1624ad17940ej3v0ds+41115ad17941115a icsnec systems
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2sc3618 application
Abstract: NEC diode nec transistor 2SC3618
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3618 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sc3618d17971ej3v0ds00tc-1641ad17971ej3v0ds+32sc3618 applicationnec diodenec transistor
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TC1628
Abstract: D1793 2SB1114 NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1114 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sb1114d17936ej3v0ds00tc-1628ad17936ej3v0ds+3tc1628d1793nec systems
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2SC3554
Abstract: data transistor nec
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3554 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sc3554d17970ej3v0ds00tc-1644ad17970ej3v0ds+1data transistor nec
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2SD1950
Abstract: C1987 NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1950 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sd1950d17976ej3v0ds00tc-1894ad17976ej3v0ds+2c1987nec systems
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2SD1006
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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nec speed grade
Abstract: nec transistor 2SA1463
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SA1463 HIGH SPEED SWITCHING PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sa1463d17935ej3v0ds00tc-1889ad17935ej3v0ds+2nec speed gradenec transistor
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2SC3617
Abstract: TC1640 NEC Systems
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3617 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD <R> <R> <R> <R> <R> The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics
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2sc3617d17913ej3v0ds00tc-1640atc1640+1nec systems
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d2493
Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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a1186a1215a1216a1262+16a1294a1295a1303a1386/aa1488/aa1492d2493c4468transistor d2562 b1649c4467c4381c4131transistor a1492a1695 power transistorc4153c3852
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c4381
Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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a1186a1215a1216a1262+16a1294a1295a1303a1386/aa1488/aa1492c4381d2493c4467c4468c4131c4467 a1694c3519c3852c3834d2494
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D2641
Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10
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a1186a1215a1216a1262+16a1294a1295a1303a1386/aa1488/aa1492d2641c4381transistor a114c5239b1686c4517c4131c3284c4467c4300
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C4517
Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
Contextual Info: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668
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c3678c4020c4299c4304+13c4445c4908c5249c4517c4517ac5239c5287c4138a1695 power transistortransistor c4381c3852aa1216 c2922transistor c5287
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diode MARKING M16
Abstract: D1790 TC-2331 2SJ209 marking H17 TC233 nec mosfet
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ209 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ209, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
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2sj209diode marking m16d1790tc-2331+3marking h17tc233nec mosfet
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2SJ211
Abstract: 2332a m400 equivalent
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ211 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
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2SJ204
Abstract: 2SK1582 marking h15
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ204 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 2.9 ±0.2 relays, and solenoids.
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m02 marking transistor
Abstract: 2SJ461A h19 mosfet Diode marking m7 DC M7 DIODE D1790
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ461A P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in
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2sj461a2sj461a-t1b-at2sj461a-t2b-atsc-59+5m02 marking transistorh19 mosfetdiode marking m7dc m7 dioded1790
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D1790
Abstract: marking H12 Diode marking m7 2SJ185 2SK1399 NEC PART NUMBER MARKING
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ185 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ185 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. 2.8 ±0.2 2.9 ±0.2 power saving. FEATURES • Directly driven by ICs having a 3 V power supply.
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2SJ210
Abstract: NEC PART NUMBER MARKING D1790
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ210 P-CHANNEL MOSFET FOR SWITCHING PACKAGE DRAWING Unit: mm The 2SJ210, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 2.8 ±0.2 FEATURES • Directly driven by the output of ICs having a 5 V power source.
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2SJ204
Abstract: 2SK1582 20067 VICP
Contextual Info: データ・シート MOS形電界効果トランジスタ MOS Field Effect Transistor 2SJ204 Pチャネル MOS FET スイッチング用 2SJ204は，5 V電源系ICによりドライブ可能なPチャネル小信号 外形図（単位：mm） MOS FETです。
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K1981
Abstract: 2SD100 2SD1006 1007
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1006, 1007 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。
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2sd1006d17972jj4v0ds00tc-5477ad17972jj4v0ds+4m8e02k19812sd1001007
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1115A
Abstract: D1794 2SB1115 k1985
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SB1115, 1115A PNP エピタキシアル形シリコントランジスタ 低周波電力増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。
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2sb1115d17940jj3v0ds00tc-5825ad17940jj3v0ds+4m8e021115ad1794k1985
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