TRANSISTOR D176 Search Results

D1769

Abstract: nec k 1006 2SK4041 nec 1006 NEC PART NUMBER MARKING 2SK4
Contextual Info: DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK4041 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION PACKAGE DRAWING Unit: mm The 2SK4041 is suitable for converter of ECM. 1.0 0.6 FEATURES • High gain −1.0 dB (VDS = 2.0 V, C = 5 pF, RL = 2.2 kΩ)

d2493

Abstract: c4468 transistor D2562 B1649 c4467 c4381 c4131 transistor A1492 a1695 power transistor c4153 c3852
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

c4381

Abstract: D2493 c4467 c4468 C4131 c4467 a1694 C3519 c3852 C3834 d2494
Contextual Info: Contents Transistor Selection Guide .2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

D2641

Abstract: c4381 transistor A114 C5239 b1686 c4517 C4131 C3284 c4467 C4300
Contextual Info: Contents Transistor Selection Guide.2 Reliability.6 Temperature Derating in Safe Operating Area.9 Accessories.9 Switching Characteristics Test Circuit.10 Symbols and Term.10

d1760

Abstract: 821 transistor
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760^Q, where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

TRANSISTOR d1760

Abstract: 2SD1760F5
Contextual Info: 2SD1760F5 Transistor, NPN Features Dimensions Units : mm • available in CPT F5 (SC-63) package • package marking: D1760*Q , where ★ is hFE code and □ is lot number • low collector saturation voltage, typically VCE(sat) = 0.5 V for lc/lB = 2 A/0.2 A

B1143

Abstract: transistor D1683 2sb1143 D1683 TRANSISTOR MARKING NK 2SB1143S 2SD1642 2SD1683 EN2063C 7516a
Contextual Info: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features

B1143

Abstract: TO126ML 2SB1143
Contextual Info: 2SB1143/2SD1683 Ordering number : EN2063C SANYO Semiconductors DATA SHEET PNP/NPN Epitaxial Planar Silicon Transistor 2SB1143/2SD1683 50V/4A Switching Applications Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features

2SB1140

Abstract: 2069A
Contextual Info: Ordering number:2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042A Features [2SB1140] · Adoption of FBET, MBIT processes.

2SB1140

Abstract: ITR09005
Contextual Info: Ordering number:ENN2069A PNP Epitaxial Planar Silicon Transistor 2SB1140 20V/5A Switching Applications Applications Package Dimensions • Strobes, power supplies, relay drivers, lamp drivers. unit:mm 2042B Features [2SB1140] 8.0 3.3 1.4 4.0 1.0 1.0 1.5 7.5

B1143

Abstract: transistor D1683 2SD 1143 2SB1143S
Contextual Info: Ordering number : EN2063C 2SB1143/2SD1683 Bipolar Transistor http://onsemi.com – 50V, (–)4A, Low VCE(sat), (PNP)NPN Single TO-126ML Applications • Voltage regulators, relay drivers, lamp drivers, electrical equipment Features • • Adoption of FBET, MBIT processes

D1768

Abstract: transistor BC 336 BTD1768 80V 1A NPN Transistor TO-92 1902 transistor BC 390 Transistor c304a
Contextual Info: CYStech Electronics Corp. Spec. No. : C304A3-B Issued Date : 2006.08.21 Revised Date : Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1768BA3 Description The BTD1768BA3 is designed for use in driver and output stages of AF amplifier and general purpose

D1768

Abstract: BTD1768A3 80V 1A NPN Transistor TO-92
Contextual Info: CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2004.12.23 Page No. : 1/4 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose

D1768

Abstract: BTD1768A3 NPN transistor ECB TO-92 700 H2A
Contextual Info: CYStech Electronics Corp. Spec. No. : C304A3 Issued Date : 2003.07.28 Revised Date :2006.11.30 Page No. : 1/5 General Purpose NPN Epitaxial Planar Transistor BTD1768A3 Description The BTD1768A3 is designed for use in driver and output stages of AF amplifier and general purpose

C4517

Abstract: c5287 C4138 a1695 power transistor transistor c4381 C4517A C3678 C3852A A1216 C2922 transistor c5287
Contextual Info: Transistor Selection Guide • VCEO-IC 800 C3678 C4020 C4299 C4304 C4445 C4908 C5249 C4517 C4517A C5239 600 550 C3679 C4300 C4706 C3927 C4557 C3830 C4907 400 C4073 C4418 C4662 C5130 C3831 C3832 C3890 C4130 C4546 C4138 C4296 C3833 C4297 C5071 D2017 200 A1668

2SB1140

Contextual Info: O rde rin g n u m b e r: E N 2 0 6 9 A _ 2SB1140 PNP Epitaxial Planar Silicon Transistor 20V/5A Switching Applications Applications • Strobes, power supplies, relay drivers, lamp drivers. Features . Adoption of FBET, MBIT processes. . Low saturation voltage.

d1760

Abstract: TRANSISTOR d1760 d1760 NPN Transistor C848J3 BTB1184J3 BTD1760J3 BTD1760
Contextual Info: CYStech Electronics Corp. Low Vcesat NPN Epitaxial Planar Transistor BTD1760J3 BVCEO IC RCESAT Spec. No. : C848J3 Issued Date : 2003.04.18 Revised Date : 2009.02.04 Page No. : 1/6 50V 3A 125mΩ typ. Features • Low VCE sat , VCE(sat)=0.25 V (typical), at IC / IB = 2A / 0.2A

Contextual Info: Ordering number: E N 2069A 2SB1140 PN P Epitaxial P lanar Silicon Transistor S M IY O i 20V/5A Switching Applications A p p licatio n s • Strobes, power supplies, relay drivers, lamp drivers: F e a tu re s . Adoption of FBET, MBIT processes. . Low saturation voltage.

TRANSISTOR d1760

Abstract: TRANSISTOR d1762 D1762 D1864 d1760 d1760 NPN Transistor 2SD1864 2SD1762 transistor 1002 d1762 f g
Contextual Info: Transistors Power Transistor 50V, 3A 2SD1760/2SD1864/2SD1762 •F e a tu re s 1) •E x te rn a l dimensions (Units: mm) LO W VcE(sat). VcE(sat) = 0.5V (Typ.) ( I c / I b = 2A/0.2A) 2) Complements the 2SB1184/2SB1243/2SB1185. •S tru c tu re Epitaxial planar type

2sk4041

Abstract: D1769
Contextual Info: データ・シート 接合形電界効果トランジスタ JUNCTION FIELD EFFECT TRANSISTOR 2SK4041 N チャネル接合形電界効果トランジスタ ECM インピーダンス変換用 外形図（単位：mm） 2SK4041 は，小型パッケージかつ高ゲインのため音響用や携

triac zd 607

Abstract: transistor C5586 bridge rectifier sanken rb40 rb40 bridge rectifier rb60 bridge rectifier ZD 607 - triac CTPG2F CTX12S Toshiba transistor c4468 STA524A
Contextual Info: Warning ● The contents in this document are subject to changes, for improvement and other purposes, without notice. Make sure that this is the latest version of the document before use. ● The operation and circuit examples in this document are provided for reference purposes

SK 18752

Abstract: SK 18751 2SC5586 SI-18752 fn651 709332a CTB-34D SLA6102 SLA4052 SI 18751
Contextual Info: Bulletin No O03ED0 （May, 2008） SEMICONDUCTORS GENERAL CATALOG ICS TRANSISTORS THYRISTORS DIODES LEDS LE D Diode I C Thyristor Tr a n s i s t o r SANKEN ELECTRIC CO., LTD. http://www.sanken-ele.co.jp/en/index.html Warning ● The contents in this document are subject to changes, for improvement and other purposes,

c5287

Abstract: c4381 c3852a c4138 D2494 c4131 transistor c3835 C4020 TO220 transistor c3856 npn c3852
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

trw RF POWER TRANSISTOR

Abstract: trw rf transistor trw transistors LT 9228 trw 131* RF POWER TRANSISTOR trw rf semiconductors 2023-12 TRW 52604 TP 9382 trw hybrid
Contextual Info: TR W RF SEMICONDUCTORS CATALOG 1981 EUROPEAN EDITION TABLE OF CONTENTS Pages • • • • INTRODUCTION. Q U A LITY .