TRANSISTOR D1616 Search Results
TRANSISTOR D1616 Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
|---|---|---|---|---|---|
| 2SC6026MFV |
|
NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 | Datasheet | ||
| TTC5886A |
|
NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold | Datasheet | ||
| TTA2097 |
|
PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold | Datasheet | ||
| TTA012 |
|
PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini | Datasheet | ||
| TPCP8514 |
|
NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PS-8 | Datasheet |
TRANSISTOR D1616 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
d1616Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1A4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AN1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1F4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AN1F4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L4Z on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 47 kΩ) • Complementary transistor with AN1L4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1F4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 22 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A4Z on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 10 kΩ) • Complementary transistor with AA1A4Z ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
15ace | |
d1616Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3N on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
d1616Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3M on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3M on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1A3Q on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 1.0 kΩ, R2 = 10 kΩ) • Complementary transistor with AA1A3Q ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
|
|||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AN1L3M on-chip resistor PNP silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 4.7 kΩ) • Complementary transistor with AA1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
|
Contextual Info: DATA SHEET COMPOUND TRANSISTOR AA1L3N on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES PACKAGE DRAWING UNIT: mm • On-chip bias resistor (R1 = 4.7 kΩ, R2 = 10 kΩ) • Complementary transistor with AN1L3N ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C) |
Original |
||
utc d1616a
Abstract: D1616A d1616 transistor d1616a TRANSISTOR D1616
|
Original |
2SD1616/A 2SD1616L/2SD1616AL 2SD1616-T92-B 2SD1616L-T92-B 2SD1616-T92-K 2SD1616L-T92-K 2SD1616A-T92-B 2SD1616AL-T92-B 2SD1616A-T92-K 2SD1616AL-T92-K utc d1616a D1616A d1616 transistor d1616a TRANSISTOR D1616 | |
D1616A
Abstract: d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616
|
Original |
MMBT1616/A OT-23 MMBT1616L/MMBT16AL MMBT1616-x-AE3-R MMBT1616L-x-AE3-R MMBT1616A-x-AE3-R MMBT1616AL-x-AE3-R D1616A d1616 a D1616 transistor d1616a TRANSISTOR D1616 MMBT1616A MMBT1616 D1616 marking transistor MMBT1616AL utc 1616 | |
D1616A
Abstract: utc d1616a d1616 TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor
|
Original |
2SD1616/A D1616 D1616A width10ms, QW-R201-008 utc d1616a TRANSISTOR D1616 transistor d1616a 2sd1616 silicon transistor npn d1616 transistor | |
D1616A
Abstract: d1616 transistor d1616a utc d1616a UTC d1616
|
Original |
2SD1616/A OT-89 D1616 D1616A width10ms, QW-R208-015 transistor d1616a utc d1616a UTC d1616 | |
D1616A
Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN
|
Original |
2SD1616/A OT-89 D1616 D1616A width10ms, 100mA 100mA utc d1616a transistor d1616a TRANSISTOR D1616 npn switching transistor Ic 100mA D1616A g TRANSISTOR pc 135 audio output TRANSISTOR NPN | |
D1616A
Abstract: utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616
|
Original |
2SD1616/A D1616 D1616A width10ms, QW-R201-008 D1616A utc d1616a d1616 transistor d1616a TRANSISTOR D1616 640 TRANSISTOR NPN d1616 transistor D1616A g npn switching transistor Ic 100mA UTC d1616 | |
utc d1616aContextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT1616/A NPN EPITAXIAL SILICON TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR 3 DESCRIPTION * Audio frequency power amplifier * Medium speed switching 2 1 SOT-23 JEDEC TO-236 ORDERING INFORMATION Order Number Note: MMBT1616G-x-AE3-R |
Original |
MMBT1616/A OT-23 O-236) MMBT1616G-x-AE3-R MMBT1616AG-x-AE3-R MMBT1616L-x-AE3-R MMBT1616 utc d1616a | |
Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
|
OCR Scan |
||