TRANSISTOR D032 Search Results

nj TRANSISTOR

Abstract: 35 15 rail en 50022 C250
Contextual Info: 3 Interface Relays Interface Relays I1-OC Transistor Output 500mA 1N/O I1-OC Transistor Output (500mA 1N/O) Part No. Rated Voltage (Un) I1-OC-D032R I1-OC-U024R I1-OC-U230R 0.5A/70VDC 0.5A/70VDC 0.5A/70VDC 5…32VDC Coil 24VAC/DC Coil 230VAC/DC Coil Relays with transistor output up to 500 mA / 70 V DC

BFY90 PHILIPS

Abstract: BFY90
Contextual Info: Philips Semiconductors Product specification bbSBIBl D0321S5 b^2 BIAPX NPN 1 GHz wideband transistor BFY90 N AMER PHILIPS/DISCRETE DESCRIPTION b^E J> PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

vk200 philips

Abstract: BFY90 PHILIPS BFY90 VK200 Philips BFy90
Contextual Info: Philips Semiconductors b b s a ia i D0321S5 b^E M AP V Product specification NPN 1 GHz wideband transistor BFY90 N DESCRIPTION AMER P H IL IP S /D IS C R E T E bTE PINNING NPN transistor in a TO-72 metal envelope, with insulated electrodes and a shield lead connected to the

Contextual Info: bbSBTBl 003EQA7 Ell Philips Semiconductors Product specification APX BFT24 NPN 2 GHz w ideband transistor N ANER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN transistor in a plastic SOT37 envelope. It is primarily Intended for use in RF low power amplifiers, such as in

X3A-BFQ195

Abstract: BFG195 BFG197 BFG198
Contextual Info: Philips Semiconductors |H bb SB T B l NPN 8 GHz wideband transistor crystal D0322Dfl 757 APY Product specification X3A-BFQ195 N AMER PHILIPS/DISCRETE LTE ]> MECHANICAL DATA DESCRIPTION Crystal NPN crystal used in BFG195 SOT103 , BFG197 (SOT143) and BFG198 (SOT223). Crystals are supplied

TRANSISTOR D 5702

Abstract: OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 BFT93W FC 0137 transistor 1661 equivalent 206 transistor specification sheet
Contextual Info: m □ 0 3 2 2 3 ‘ì 3 2 0 H I A P X N A PIER P H I L I P S / D I S C R E T E bTE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEA TU R E S D ES C R IPTIO N • High power gain Silicon PNP transistor in a plastic, S O T 323 S-mini package. The

cb pj 47 diode

Contextual Info: N AUER PHILIPS/DISCRETE b^E J> bbS3T31 DD3227fl 070 H A P X Product specification Philips Semiconductors NPN silicon planar epitaxial microwave power transistor _ LFE15600X FEATURES QUICK REFERENCE DATA • Diffused emitter ballasting resistors

BT 816 transistor

Abstract: PA 1515 transistor 9921 transistor
Contextual Info: Philips Semiconductors bb£ 3 R 31 Q Q 35 Q b b SR? ^ B A P X _ Product specification NPN 9 GHz wideband transistor BFS540 N AMER PHILIPS/DISCRETE FEATURES PINNING PIN CONFIGURATION PIN • High power gain DESCRIPTION _ EL Code: N4 • Low noise figure

Contextual Info: Philips Semiconductors bb 5 3 =l31 0 0 3 3 1 8 1 7 8 4 • APX —JProductsgecjflc^ NPN 1 GHz general purpose switching transistor £ MPSH10 N AMER PHILIPS/DISCRETE FEATURES b'lE D PINNING PIN • Low cost • High power gain. DESCRIPTION DESCRIPTION 1 collector

Contextual Info: KA7577 ELECTRO NICS I ndus t r i a] HIGH-PERFORMANCE PWM CONTROLLERS 16 DIP KA7577 is fixed frequency PWM controller and specially designed for SMPS to get regulated DC voltage from AC power supply. This integrated circuit has so fast rise and fall output pulse that it can directly drive power transistor

philips Transistor Equivalent list

Abstract: BDT91 BY239 LFE15600X D0322 374 erie transistor td7
Contextual Info: N AUER PHILIPS/DISCRETE b^E T> • bbSBTBl GG3227Ô Ü70 H A P X Philips Semiconductors Product specification NPN silicon planar epitaxial microwave . . power transistor L rE I FEA TU R E S Q U IC K R E F E R E N C E DATA • Diffused emitter ballasting resistors

Harris CA3046

Abstract: CA3046 7h0 ITT ICAN-5296
Contextual Info: S E MI CON] SECTOR 4DE D 4302271 J i HARRIS 003220b I HAS CA3045 CA3046 General Purpose N -P-N Transistor Arrays August 1991 fea tu res Description • Two Matched Tran sisto rs: V b ë Matched ±5mV; Input Offset Current 2pA Max at lc = 1mA The CA304S and CA3046 each consist of fivo general

Contextual Info: PWR-DRV2 Dual Universal Driver 400 V - 250 mA per channel POWER INTEGRATIONS, INC. Product Highlights Drives AC or DC relays and solenoids W ill operate from a rectified A C or D C pow er source 200, 300, and 400 V versions D rives up to 27 W loads from rectified 120 V A C input

F2LP-Wk4-us

Abstract: F2LP-W10M F2LP-W20M F2LP-W50M
Contextual Info: Inductive Ring Sensor F2LP-W Ring Sensing Head for Detecting Moving Minute Metallic Objects Detects moving metallic objects of any shape anywhere in the ring. Sensor Heads with 10-mm to 100-mm diameters available. Incorporates a 40-ms OFF-delay timer. Amplifier Unit with DIN-track mounting hooks

transistor d032

Abstract: relays D012 D032 coil DC 12v I1C-20BK 20BL 230V ac relay coil 5-32VDC 12vDC OUTPUT 230VAC RELAY
Contextual Info: GENERAL PURPOSE / INTERFACE RELAYS I1-L I1-T I1-OC SPDT 6A 12V, 24V, 36V 90…230V 24V, 230V 6A @ 250VAC; 6A @ 24 VDC 8 mA @ 24 V AgSnO2 SPDT 1.2 A 5…32V N/A 24V, 230V 1.2 A @ 400 VAC 8 mA AgSnO2 SPDT 500 mA 5…32V N/A 24V, 230V 500 mA @ 70 VDC 1 mA AgSnO2

PROXIMITY inductive ic

Abstract: metal detectors IC OM2860 OM2870
Contextual Info: N AMER PHILIPS/DISCRETE Philips Semiconductors Data sheet status Product Specification date of issue August 1990 FEATURES • Extra small dimensions. • Wide range of supply voltage. • High output current. • Well proven oscillator stage using discrete transistors.

Contextual Info: KA7551 ELECTRONICS Industrial DUAL PWM CONTROLLER The KA7551 is a dual PWM control circuit designed for power supply con­ trol. This PWM controller includes 2.5V regulator block, two error amplifier blo­ cks, adjustable oscillator block, undervoltage lockout block and common

Contextual Info: • b b S a ^ l 003273T T3S « A P X | I I OM386B OM387B N AF1ER PHILIPS/DISCRETE b'JE D _ y V HYBRID INTEGRATED CIRCUITS FOR INDUCTIVE PROXIMITY DETECTORS Hybrid integrated circuits intended for inductive proximity detectors in tubular construction,

diagram ta 306-20

Abstract: 4640A d023 transistor 34330 D019 D020 D021 D047 S-4640A transistor d032
Contextual Info: S-4640A 64-bit THERMAL HEAD DRIVER The S-4640A is a CM OS thermal print head driver with a 64-bit shift register and a latch. The 100 ¡j.m driver output pad pitch allows for high density mounting up to 200 dpi or 8 dots/mm. Features Low current consumption : 0.5 mA typ.

Contextual Info: Contents Features. 1 Block Diagram. 1 Terminal

SHC76

Abstract: ADC71 649T ADC76 PCM75 SHC76BM SHC76KM ADC71KG 320E7
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson BURR-BROW N! SHC76 1 E SAMPLE/HOLD AMPLIFIER FEATURES DESCRIPTION • FAST 6ns max ACQUISITION TIME (14-bit) The SHC76 is a fast, high-accuracy hybrid sample/ hold circuit suitable for use in high-resolution data

SHC76

Abstract: adc76 ADC71
Contextual Info: For Immediate Assistance, Contact Your Local Salesperson B U R R - B R O W N 'i E SHC76 1 SAMPLE/HOLD AMPLIFIER FEATURES DESCRIPTION • FAST 6ns max ACQUISITION TIME (14-bit) The SHC76 is a fast, high-accuracy hybrid sample/ hold circuit suitable for use in high-resolution data

SN0423

Abstract: 4100 ir receiver AN243 HSDL-7000 MCP2120 MCP2122 MCP2140 MCP2150 MCP2155 TCM809
Contextual Info: MCP2122 Infrared Encoder/Decoder Features Package Types • Pinout compatible with HSDL-7000 • Compliant with IrDA Standard Physical Layer Specification version 1.3 • UART to IrDA Standard Encoder/Decoder - Interfaces with IrDA Standard Compliant Transceiver

ir132

Abstract: ir113 ir102b IR123 agilent d041 ir133 HSDL-7000 MCP2120 MCP2122 MCP2140
Contextual Info: MCP2122 Infrared Encoder/Decoder Features Package Types • Pinout compatible with HSDL-7000 • Compliant with IrDA Standard Physical Layer Specification version 1.3 • UART to IrDA Standard Encoder/Decoder - Interfaces with IrDA Standard Compliant Transceiver