TRANSISTOR D 819 Search Results

BUX45

Abstract: transistor et 460
Contextual Info: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection

transistor NEC D 822 P

Abstract: transistor number D 2498 702 mini transistor 2SC4226-T1 NEC D 822 P 2sc4226 2SC4226-T2
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC4226 HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD D E S C R IP T IO N The 2SC4226 is a low supply voltage transistor designed for VHF, UHF low PA C K A G E D IM E N S IO N S in millimeters

Contextual Info: MOTOROLA Order this document by MSD42WT1/D SEMICONDUCTOR TECHNICAL DATA Preliminary Information MSD42WT1 NPN Silicon General Purpose High Voltage Transistor Motorola Preferred Devices This NPN Silicon Planar Transistor is designed for general purpose amplifier

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

Contextual Info: N AMER PHILIPS/DISCRETE ^1=53^31 DD3T433 E7D BLW83 fc.RE D IAPX l H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in transmitting am plifiers operating in the h.f. and v.h.f. bands, w ith a nominal supply voltage o f 28 V . The transistor is specified fo r s.s.b. applications as linear

BLX13

Abstract: BLX13A C 3311 transistor HF band power amplifier philips 3h1 transistor f PH ON 823 philips Fxc 3 b SOT-56 transistor c 1971
Contextual Info: II PHI L IP S I N T E R N A T I O N A L MAINTENANCE TYPE MIE B J> 7110flSb O D E 7 7 C H 2 D P H I N II BLX13 H.F./V.H.F. POWER TRANSISTOR N-P-N epitaxial planar transistor intended for s.s.b. in class-A and AB and in f.m. transmitting appli­ cations in class-C with a supply voltage up to 28 V. The transistor is resistance stabilized and tested

DTA143TA

Contextual Info: DTA143TU/DTA143TK/DTA143TS/DTA143TF DTA143TL/DTA143TA/DTA143TV h 7 > y ^ $ /T ra n s is to rs D TA 143TU /D TA 143TK /D TA 143TS D TA 143TF/D TA 143TL/D TA 143TA DTA 143TV |s -7 > y ^ < y -?-/Transistor Switch Digital Transistors Includes Resistors F ~7

od300

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5289 NPN SILICON EPITAXIAL TRANSISTOR FOR L-BAND LOW-POWER AMPLIFIER T he 2S C 5 2 8 9 is ideal fo r the final stag e am p lifie r in 1.9G H z-band digital cord le ss phones D EC T, PHS, etc. . PA C K A G E D R AW IN G (Unit: mm)

transistor ESM 16

Abstract: deflexion transistor ESM 30 ESM191 1S1500
Contextual Info: E S M 191.500 NPN S ILIC O N TR A N S IS TO R , D IF F U S E D MESA TRANSISTOR NPN S ILIC IU M , MESA DIFFUSE The ESM 191-500 is a fast switching high voltage transistor. It is primarly intended for use in horizon­ tal deflexion output stage o f black and

TRANSISTOR D 819

Contextual Info: UMC2N/FMC2A b y > v * * /Transistors UMC2N FMC2A 7 a 7 ^ 5 u i — J l K f'" 7 > v ?^ £ /D u a l Mini-Mold Transistor I t + PNP/NPN ' > ' ; □ > h 7 > ' > ^ ^ Epitaxial Planar PNP/NPN Silicon Transistor • • # * ^füll/D im en sio n s U nit: mm 1) X - n - i - t - A K / i ' ^ - y T '

30011

Abstract: 2PA733 2PC945 2PA733 noise figure
Contextual Info: N AUER PHILIP S/DISCRETE bTE D • bbSa^Bl OOEñlñl SET 2PA733 IAPX SILICON SMALL-SIGNAL TRANSISTOR PNP small-signal transistor, in a plastic TO-92 envelope. It is intended fo r use in audio am plifier driver stages and low speed switching applications etc.

transistor Siemens 14 S S 92

Abstract: CBV2 BRY56 Q68000-A803 Q68000-A803-S1 Q68000-A803-S3 IW transistor BRY 56 A Programmable unijunction D 823 transistor
Contextual Info: ESC D • 023StiOS 0004773 1 M S Ï E G , Programmable Unijunction Transistor BRY 56 T -3 - ^ - o f SIEMENS AKTIEN6ESELLSCHAF Programmable silicon planar unijunction transistor in TO 9 2 plastic package 10 A 3 DIN 4 1 8 6 8 . H8m ax Type O rdering cod e

2PC945

Abstract: 2PA733 TRANSISTOR D 819
Contextual Info: 2PA733 PHILIPS INTERNATIONAL 5bE D 71Ii0äSb OOMEb^b 312 • PHIN SILICON SMALL-SIGNAL TRANSISTOR PNP small-signal transistor, in a plastic TO-92 envelope. It is intended for use in audio amplifier driver stages and low speed switching applications etc. NPN complementary type is the 2PC945.

30V-8A

Abstract: CET453N 8a 817 voltage 67A SOT 23 6
Contextual Info: CET453N March 1998 N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 8A , RDS ON =28mΩ @VGS=10V. RDS(ON)=42mΩ @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. SOT-223 Package. G D S D 8 S D SOT-223 S G G SOT-223 (J23Z)

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

Contextual Info: MICROSEMI CORP/POWER 27E D • iallSTSQ D Q G D S M Q G ■ P T C y _ 3 3 _ / 3 TSB125100 TECHNOLOGY Power Transistor Chip, NPN 25 A, 1000 V, tf = 50 ns ■ Planar Epitaxial ■ Contact Metallization: ■ Chip Thickness: 22 mils Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag

MJ100BE55

Abstract: MJ100BE
Contextual Info: 6367254 MOTOROLA SC MOTOROLA CXSTRS/R F »E|b3t,7ESM ooam^T d 96D 8 1 4 9 9 d T-33-3S- vsruer uns ucua diitiet by MJ100BE55/D | SEMICONDUCTOR TECHNICAL DATA MJ100BE55 IMPINI Silicon Power Transistor Module Energy M anagement S eries These Darlington transistors are designed for industrial service under practical operat­

5609

Abstract: 5609 transistor TSA63065
Contextual Info: 4SE D • b l lS T S D DDDDSS3 MDO « P T C NICROSEMI CORP/POliIER TSA63065 Power Transistor Chip, NPN 30 A, 650 V, tf = 0.1 ps ■ Planar Epitaxial ■ Contact Metallization: Base and Emitter-Aluminum Collector Au or Ti/Ni/Ag ■ Chip Thickness: 22 mils

sf 819 transistor

Abstract: 27e transistor transistor BDY29
Contextual Info: Power Transistors File Number HARRIS 819 SEMICOND SECTOR 2 ?E D m BDY29 □ 0 2 0 1 7 ci 5 H H A S 4302271 High-Power High-Current Transistor Silicon N -P -N Devices for Applications in Industrial and C o m m ercial Equipm ent TERMINAL DESIGNATIONS Features:

transistor BDY29

Abstract: RCA-BDY29 BDY29 17560 High-Power NPN Silicon Power Transistor TRANSISTOR D 819 High-Power NPN Silicon Power Transistor 30A 6 PIN TRANSISTORS 566
Contextual Info: G E SOLI D 3875081 T i STATE G E SOLID STATE DE | 3 f l ? S 0 f l l 01E 0Q17Sb0 17560 _Hro biectron Kower Transistors File Num ber 819 BDY29 High-Power High-Current Transistor Silicon N -P -N Devices for Applications in Industrial and C om m ercial Equipm ent

Contextual Info: SEMELAB PLC hGE D • Û1331Û7 OOODbfiH bH3 MOSPOWER4 IGBT = rr= SEM E LAB SML45G100BN 1000V 45A N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS Symbol All Ratings: Tc = 25°C unless otherwise specified. Parameter

transistor TT 2146

Abstract: APT50G50BN APT50G60BN APT50G60 538J
Contextual Info: A DV A NC ED POIilER TECHNOLOGY b lE 0 2 S 7 ‘i 0 ti D OOO D' î DT S3b • A VP ADVANCED POW ER Te c h n o l o g y APT50G60BN APT50G50BN 600V 500V 50A 50A POWER MOS IV IGBT N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR

2sc5194-t1

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC5194 MICROWAVE LOW NOISE AM PURER NPN SILICON EPITAXIALTRANSISTOR P A C K AG E D R A W IN G S FEATU RES • Low Voltage O peration, Low Phase D istortion • Low Noise Unit: mm N F = 1.5 dB TYP. @ V ce = 3 V, Ic = 7 mA, f = 2 GHz