TRANSISTOR D 188 Search Results

max10169

Abstract: 2SK702D
Contextual Info: 6427525 N E C ELECTRONICS N E C 98 D INC E LECTRONICS INC 15 18881 D T - OOlflflfl], 3 PE 1 ^ 5 7 5 5 5 N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK702 D E SC R IPTIO N The 2SK702 is N-Channel MOS Field Effect Power Transistor PACAKGE D IM E N S IO N S

NTE165

Abstract: NPN Transistor 1500V
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

NPN/TRANSISTOR 187

Abstract: NTE165
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

NPN Transistor 1500V

Abstract: NTE165
Contextual Info: NTE165 Silicon NPN Transistor TV Horizontal Output Description: The NTE165 is a silicon NPN transistor in a TO3 type package designed for use in color TV horizontal output applications. Features: D High Voltage D High Power D High Switching Speed D Good Stability

Contextual Info: OLE D N AUER PHILIPS/DISCRETE 86D 01878 D r - ^^53=131 DD1411L t> jt 1 BLY87A V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor fo r use in class-A, B and C operated mobile and m ilitary transmitters with a supply voltage o f 13,5 V . The transistor is resistance stabilized and is guaranteed to

NPN Transistor 1500V

Abstract: transistor tl 187 187 npn transistor NPN Transistor 1500V 20a NTE238
Contextual Info: NTE238 Silicon NPN Transistor Color TV, Horizontal Output Description: The NTE238 is a silicon NPN horizontal deflection transistor in a TO3 type package designed for use in deflection circuits. Features: D VCEX = 1500V D Safe Operating Area @ 50µs = 20A, 400V

NTE327

Abstract: transistor NTE327
Contextual Info: NTE327 Silicon NPN Transistor Power Amp, Switch Description: The NTE327 is a silicon NPN transistor in a TO3 type package designed for use in industrial amplifier and switching circuit applications. Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain

NTE162

Abstract: NPN Transistor 10A 400V
Contextual Info: NTE162 Silicon NPN Transistor TV Vertical Deflection Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: D High Voltage: VCEX = 400V D Gain Specified to 3.5A

NTE163A

Contextual Info: NTE163A Silicon NPN Transistor Horizontal Deflection Description: The NTE163A is an NPN silicon transistor in a TO3 type case designed for use in large screen color deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Collector–Emitter Sustaining Voltage: VCEO sus = 700V

NTE389

Contextual Info: NTE389 Silicon NPN Transistor Horizontal Output Description: The NTE389 is a high voltage silicon NPN power transistor in a TO3 type case designed for use in CRT horizontal deflection circuits. Features: D Collector–Emitter Voltage: VCEX = 1500V D Glass Passivated Base–Collector Junction

lem HA

Abstract: transistor bu2520d BU2520D
Contextual Info: N AMER PHILI PS /D IS CRE TE blE D • LbSBTBl 002fl37b 7SM M A P X Phjljps^Semiconductorg_ Productspe Silicon diffused power transistor BU2520D GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic

2SK659

Contextual Info: C ELECTRONICS INC Tfl »F|t.M27S2S DOlflñS11] D ~ f D ^ N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.

PWS300

Abstract: 2SK591 10VRM
Contextual Info: 642 752 5 N E C N E C ELEC TRONI CS INC 98D 18840 DT-'J?-'// ELECTRONICS INC N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK591 D E S C R IP T IO N The 2SK591 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.

Contextual Info: N E C ELECTRONICS INC "TA DeT|l,427S25 D D i a a S T □ I ~r ~ * el - ' i i D N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK659 D E S C R IP T IO N The 2 S K 6 5 9 is N-Channel M O S Field Effect Power Transistor P A C K A G E D IM E N S IO N S designed for solenoid, motor and lamp driver.

tip122 tip127 audio amp schematic

Abstract: mje521 equivalent BJT small signal low power BD139 MJ15003 300 watts amplifier 2N3773 pinout transistor mj11032 equivalent MJ11028 transistor equivalent 2n3055 IC 2N3773 audio amplifier diagram 2n222 TRANSISTOR use as audio amplifier
Contextual Info: DL111/D Rev. 8, July-2001 Bipolar Power Transistor Data Bipolar Power Transistor Data DL111/D Rev. 8, Jul–2001  SCILLC, 2001 Previous Edition  1995 “All Rights Reserved’’ Grafoil is a registered Trademark of Union Carbide. Kon–Dux and Rubber–Duc are trademarks of Aavid Thermal Technologies, Inc.

305 Power Mosfet MOTOROLA

Abstract: Transistor motorola 418 MGW30N60
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

Transistor motorola 418

Abstract: 305 Power Mosfet MOTOROLA MGW30N60
Contextual Info: MOTOROLA Order this document by MGW30N60/D SEMICONDUCTOR TECHNICAL DATA Designer's  Data Sheet MGW30N60 Insulated Gate Bipolar Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate This Insulated Gate Bipolar Transistor IGBT uses an advanced

CA3146P

Contextual Info: MOTOROLA _ _ SEMICONDUCTOR CA3146 TECHNICAL DATA General Purpose Transistor Array GENERAL PURPOSE TRANSISTOR ARRAY One Differentially Connected Pair and Three Isolated Transistor Arrays SILICON M O NOLITHIC IN T E G R A T E D CIRCUIT T he C A 3 1 46 is designed for general purpose, low power applications in the

NTE387MP

Abstract: NTE387
Contextual Info: NTE387 Silicon NPN Transistor Power Amp, Switch Features: D High Collector–Emitter Sustaining Voltage D High DC Current Gain D Low Collector–Emitter Saturation Voltage D Fast Switching Times Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V

BLW95

Abstract: neutralization push-pull PHILIPS 4312 amplifier IEC134 w896 SOT-121A
Contextual Info: PHILIPS I N T ERNATIONAL bSE D • 711002b ÜObBHQB J 323 PHIN BLW95 H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-AB operated high power industrial and m ilita ry transm itting equipment in the h.f. band. The transistor presents excellent performance as a

Contextual Info: N E C ELECTRONICS INC Tö DE | b4S7S2S OOlñññM T |~ B 8 4 D T - 3 ? - . : '¡^ 7 iïTap, - N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR ^. y. 2SK703 D E S C R IP T IO N The 2SK 703 is N-Channel MOS Field Effect Power Transistor P A C K A G E D IM EN SIO N S

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK