TRANSISTOR CROSS REF Search Results

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

3SK223

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

Contextual Info: 3SK195 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK195 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ.

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

BFQ81

Abstract: telefunken 1007
Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

A1309

Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

Contextual Info: 3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

free pdf download P55 MOSFET

Abstract: resistor SMT 0805 MTP3055 to 263 P55 MOSFET R5B transistor SMT resistor atx 220 MTP3055 transistor R5C IR power mosfet switching power supply
Contextual Info: Data Sheet No. PD94147 IRU3033 PWM SWITCHER & LINEAR CONTROLLER IC DESCRIPTION FEATURES LDO Controller allows the use of a low cost pass transistor for the I/O supply 8-Pin SOIC combines switching and linear controller Internal pre-regulator eliminates cross talk

Contextual Info: 3SK294 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK294 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)

Contextual Info: 3SK199 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK199 TV Tuner, UHF RF Amplifier Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ. • Low noise figure: NF = 1.9dB (typ.)

R5C DIODE

Abstract: 75kv diode V12-V1 SMT 0805 IRL3103S IRL3303 IRU3033 IRU3033CS MTP3055 P55C
Contextual Info: Data Sheet No. PD94147 IRU3033 8-PIN PWM SWITCHER AND LINEAR CONTROLLER IC FEATURES DESCRIPTION LDO Controller allows the use of a low cost pass transistor for the I/O supply 8-Pin SOIC combines switching and linear controller Internal pre-regulator eliminates cross talk

MARKING ra

Abstract: LT 612 1054 transistor DAG marking dag transistor MAR 819 ci 7436 7334 marking MAR 601 transistor
Contextual Info: Temic BFQ81 Semiconductors Silicon NPN Planer RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features • Small feedback capacitance • L ow n o ise figure • Low cross modulation Marking: RA Plastic case SOT 23 1 = Collector; 2 = Base; 3 = Emitter

TPL621

Abstract: MCP3041 PC817 SOP-4 cosmo 817 PC923 APPLICATION NOTES opto coupler TLP250 MCP3040 mcp3031 tpl621-2 TLP250 MOSFET DRIVER application note
Contextual Info: Optoelectronic Products Reference Guide 2007-2008 1 TOSHIBA AMERICA ELECTRONIC COMPONENTS, INC. www.toshiba.com/taec 1 Toshiba is proud to provide this comprehensive optoelectronic products reference guide. As one of the world’s largest manufacturers of optoelectronic products,

Contextual Info: DEK-TR/INV Please note that the data given here has been taken from the online catalog. For comprehensive information and data, please refer to the user documentation at http://www.download.phoenixcontact.com. The General Terms and Conditions of Use apply to Internet downloads.

bc 7-25 pnp

Abstract: transistor bc 7-25 transistor 724 731 zener diode transistor B 722 transistor Bc 2n2222 transistor BC 176 MPS6521 transistor 2N5952 TP2222A transistor
Contextual Info: DISCRETE SEMICONDUCTORS INDEX AND CROSS REFERENCE Industry Number Type Allegro Number s Allegro Package 1 Pinning 2 3 Ratings (Page) 1N914 Diode TMPD914 TO-236AB A NC K 7-29 1N4148 Diode TMPD4148 TO-236AB A NC K 7-29 1N4150 Diode TM PD4150 TO-236AB A NC K

bc 7-25 pnp

Abstract: transistor bc 7-25 2N5245 transistor 2n3819 cross reference TO-266AA 2N3904 731 jFET Array BFR30 "cross reference" 2N5308 cross reference 266AA
Contextual Info: DISCRETE SEMICONDUCTORS IN D EX AND CROSS REFERENCE Industry Number 1N914 1N4148 1N4150 1N5229 1N5230 Type Diode Diode Diode Zener Zener Pinning 2 3 A A A A A NC NC NC NC K K K K NC K 7-29 7-29 7-29 7-30 7-30 A A A A A NC NC NC NC NC K K K K K 7-30 7-30 7-30

NTE135A

Abstract: NTE116 cross reference transistor power NTE2396 2 Amp rectifier diode NTE5127A nte159
Contextual Info: REPLACEMENT SEMICONDUCTOR KITS NTEKCOM SERIES REPLACEMENT SEMICONDUCTOR KITS Each kit is housed in a 30–drawer cabinet and comes with an NTE Semiconductor Technical Guide and Cross Reference. All devices provided in these kits are also available separately.

E3G-L77

Abstract: E3G-R13 DIA-37 E3G-R17
Contextual Info: Long-distance Photoelectric Sensor with Built-in Amplifier E3G CSM_E3G_DS_E__1 Line of Long-distance Photoelectric Sensors for Large Workpieces Includes Retroreflective Models with Sensing Distance of 10 m and Distance Settings Up to 2 m. • Compact Retro-reflective models require less wiring and