TRANSISTOR CROSS REF Search Results

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

transistor crossreference

Abstract: NTE123AP NPN transistor ECB TO-92 TIS98 "cross-reference" 2N3906 NPN Transistor NTE159 ebc Transistor BF859A TO-202 transistor NPN SK3232
Contextual Info: Black White Vector Monitor Transistor Cross-Reference Location Deflection "X" Deflection "Y" "Other" Part Wells-Gardner 19V2000 Cross Type Upgrade Location Part Electrohome G05-802 Cross Type Upgrade Q701 Q702 Q703 Q704 Q705 Q706 Q707 na TPS98 TPS98 TPS98

Contextual Info: //outran_raoMtgr Devices, Inc. AMP. CROSS REFERENCE— PEAK CURRENT TO CHIP N P N PLANAR POW ER TRANSISTOR CHIP NUMBER DESCRIPTION PAGE No. 0 .1 A . 2.0A. 2.0 A. 3.0A. 4 .5 A .

BFR94

Abstract: BFR94A BS3C TRANSISTOR FQ BFR-94
Contextual Info: • ^ 53^31 0031070 ^7=5 IA PX , Product specification NPN 3.5 GHz wideband transistor BFR94A N AUER PHILIPS/DISCRETE DESCRIPTION bTE D PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

BFR94

Abstract: BFR94A
Contextual Info: Philips Sem iconductors bbS3^31 b7=5 • APX Product spe cifica tion NPN 3.5 GHz wideband transistor BFR94A N AMER PHILIPS/DISCRETE DESCRIPTION bTE ]> PINNING NPN resistance-stabilized transistor in a SOT122E capstan envelope. PIN 1 collector It features extremely low cross

70413080

Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Contextual Info: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919

3SK223

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK223 RF AMPLIFIER FOR CATV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm CM = 101 dBµ TYP. @ f = 470 MHz, GR = –30 dB

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

Motorola transistors MRF 947

Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Contextual Info: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that

transistor cross reference

Abstract: transistor c1008 npn transistor c1008 NPN C1008 s8550 npn SS8550 cross reference S9014 cross reference c1008 transistor s9014 equivalent S8050 equivalent
Contextual Info: Micro Commercial Components Small Signal Transistor Cross Reference Group by Package FORMALLY MICROSEMI CHATSWORTH SOT-23 PACKAGE MCC PART NUMBER HFE Pc mW Ic (mA) BVcbo (V) BVceo (V) Icb (µ A) vcb(V) Vce(sat) (V) fT (MHz) INDUSTRY STANDARD PART NUMBER

BFQ81

Contextual Info: BFQ81 Silicon NPN Planer RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

BFP81

Abstract: temic 475 486 5000
Contextual Info: BFP81 Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation

Contextual Info: 3SK195 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK195 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 0.015 pF typ.

Liteon PC817

Abstract: cosmo 817 CNY 817 PC123 Triac Liteon 4n33 toshiba PC817 4n33 4n25 datasheet 4N25 CROSS nec pc123 817 cosmo
Contextual Info: PHOTO COUPLER CROSS REFERENCE Transistor Output - DC Input KODENSHI SHARP PC-17T1 PC-17T2 PC-17T4 FAIRCHILD VISHAY NEC LITEON COSMO H11A817 K817P SFH615A SFH615AA SFH617A PS2501-1 PS2561-1 PS2571-1 LTV-816 LTV-817 -V LTV-819-1 LTV123 LTV-610 K1010 PS2501-2

BFQ81

Abstract: telefunken 1007
Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

cp4071

Abstract: data sheet IC 7408 2N4891 IC 7408 MDA970A2 MDA2500 1854-0071 MDA2502 2N4342 IC TTL 7400
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

A1309

Contextual Info: BFQ81 Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation

BFR94

Abstract: Ferroxcube cross reference BFQ34 Ferroxcube core BFR94A f2nd transistor 3305
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D BFQ34 is recommended for new design • bbS3T31 DOlflOTS h U 11 BFR94 T -3 3 -0 S " N-P-N H.F. WIDEBAND TRANSISTOR N-P-N resistance-stabilized transistor in a SOT-48 capstan envelope featuring extremely low cross modulation, intermodulation and second harmonic distortion. Thanks to its high transition frequency

c5088 transistor

Abstract: transistor C3207 TLO84CN sec c5088 IN5355B D2817A C3207 transistor toshiba f630 TLO81CP MC74HC533N
Contextual Info: Transistor - Diode Cross Reference - H.P. Part Numbers to JEDEC Numbers Part Num. 1820-0225 1820-0240 1820-0352 1820-1804 1821-0001 1821-0002 1821-0006 1850-0062 1850-0064 1850-0075 1850-0076 1850-0093 1850-0099 1850-0126 1850-0137 1850-0150 1850-0151 1850-0154

0482 transistor

Abstract: transistor 0882 7334
Contextual Info: BFQ81 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Small feedback capacitance • Low noise figure • Low cross modulation 2 3 18991 Applications RF amplifier up to 2 GHz, especially for mobile telephone. Electrostatic sensitive device.

Contextual Info: 3SK257 TOSHIBA Field Effect Transistor Silicon N Channel Dual Gate MOS Type 3SK257 TV Tuner, VHF RF Amplifier Applications FM Tuner Applications TV Tuner, UHF RF Amplifier Applications Unit: mm Superior cross modulation performance. • Low noise figure: NF = 2.0dB typ.

Contextual Info: BFQ81 VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor Features 1 • Small feedback capacitance • Low noise figure • Low cross modulation 2 3 18991 Applications RF amplifier up to 2 GHz, especially for mobile telephone. Electrostatic sensitive device.

varistor 472 SUS

Abstract: rpf22n10 Fairchild UL file MOS transistor UHC MOS AN75 AN-7514 C150 IAS150 RFP22N10 uis test
Contextual Info: Single Pulse Unclamped Inductive Switching: A Rating System Application Note Failure Mechanisms Early Power MOSFET devices, not designed to be rugged, failed when the parasitic bipolar transistor indigenous to the vertical DMOS process turned on. Figure 1 shows a cross

Contextual Info: 3SK292 TOSHIBA Field Effect Transistor Silicon N-Channel Dual Gate MOS Type 3SK292 TV Tuner, VHF RF Amplifier Application Unit: mm • Superior cross modulation performance. • Low reverse transfer capacitance: Crss = 20 fF typ. • Low noise figure: NF = 1.4dB (typ.)