TRANSISTOR CR PNP Search Results

TRANSISTOR CR PNP Result Highlights (5)

Part	Manufacturer	Description	Download
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold	Datasheet
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini	Datasheet
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N	Datasheet
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini	Datasheet
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)	Datasheet

TRANSISTOR CR PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
supersot 6 TE Abstract: Supersot 6 Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor	OCR Scan	FMB1020 300mA. 100uA 100mA 150mA 100MHz 100uA, 200mA, supersot 6 TE Supersot 6	PDF
supersot 6 TE Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor	OCR Scan	FMB3946 100mA 100MHz 100uA, supersot 6 TE	PDF
Contextual Info: Q 0 E S 3 C1S TOM • APX ^53^31 Philips Semiconductors N AUER PHILIPS / D I S CR E T E b?E Product specification J> PNP 5 GHz wideband transistor DESCRIPTION £ BFT93 PINNING PNP transistor in a plastic SOT23 envelope. PIN It is primarily intended for use in RF	OCR Scan	BFT93 BFR93 BFR93A.	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP General Purpose A m plifier Transistor Surface Mount MSB709-RT1 Motorola Preferred Device COLLECTOR n □ cr 2 1 BASE EMITTER MAXIMUM RATINGS TA = 25°C Rating Collector-Base Voltage Symbol Value v (BR)CBO -6 0 Vdc	OCR Scan	MSB709-RT1 318D-03, SC-59 3b72S5	PDF
MPS2907 toshiba Contextual Info: M5E D • ID TT ES D DOIVBSR H IT0S4 TOSHIBA TRANSISTOR MPS2907 SILICON PNP EPITAXIAL TYPE PCT PROCESS T 2 cr< TOSHIBA (DISCRETE/OPTO) FOR HIGH-SPEED SWITCHING USE Unit in mm DC TO VHF AMPLIFIER APPLICATIONS AND COMPLEMENTARY CIRCUITRY. FEATURES : . High DC Current Gain Specified : -0.1	OCR Scan	MPS2907 -50mA, 200MHz MPS2222. -500mA -10/tA, -10mA, VcE--10V, -10mA MPS2907 toshiba	PDF
2SA1042 Abstract: FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432 Contextual Info: FUJITSU MI CR OEL ECT RONICS 31E » E3 3 7 4 ^ 2 GOlbSOQ b E3FMI T- 3 3 -Ì3 _ _ January 1990 ^ _ , „ - — PRODUCT PRO FILE - ' FUJITSU 2SA1041, 2SA1042, 2SC2431, 2SC2432 Silicon High Speed Power Transistor DESCRIPTION This series are silicon PNP/NPN planer general purpose, high power switching	OCR Scan	T-33-Z3 2SA1041, 2SA1042, 2SC2431, 2SC2432 2SA1042 FUJITSU 2SC2431 2SC2431 2SA1041 2SC243 2SC2432	PDF
BT8032 Abstract: transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803 Contextual Info: MELODY GENERATOR WITH ACCOMPANEMENT BT8032 FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor	Original	BT8032 16-pin BT8032 transistor k 790 CMOS LSI two sound generator ENV1 melody generator TST1 15 block diagram of melody generator BT803	PDF
BT8040N Abstract: Melody Generator BT8032 BT8040 MO chip Transistor Contextual Info: TECHNICAL DATA BT8040N Melody Generator with Accompaniment FEATURES • Two Sound Sources with Envelope CR Envelope • 3.0V to 5.0V Operating Voltage • DC or AC Triggered Performance Start Mode (Mask Selected) • Can Drive an 8 Ohm Dynamic Loudspeaker if Provided Externally with a Transistor	Original	BT8040N 16-pin BT8040 BT8032 BT8040 001BB) BT8040N Melody Generator BT8032 MO chip Transistor	PDF
transistor tt 2206 Abstract: TT 2206 transistor LT1817 transistor LT5817 Contextual Info: MOTOROLA SC XSTRS/R F MbE D b3b?ES4 00=14220 1 «flO Tt, MOTOROLA • SEMICONDUCTOR TECHNICAL. DATA I n LT5817 The RF Line PNP S ilicon High Frequency Transistor Iq = —400 m A HIGH FREQUENCY HIGH VOLTAGE TRANSISTOR PNP SILICON . . . s p e cific a lly d esig ned fo r CR T d riv e r a p p lic a tio n s req u irin g h ig h v o lta g e and high	OCR Scan	LT5817 LT1817 transistor tt 2206 TT 2206 transistor LT1817 transistor LT5817	PDF
transistor E 13009 Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009 Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d \| ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ \| «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10	OCR Scan	2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4I26 2N4400 2N4401 transistor E 13009 transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009	PDF
Contextual Info: Power Transistor Arrays PU4312 PU4312 Silicon NPN/PNP Epitaxial Planar Type Package Dimensions Power Amplifier, Switching • Features • L ow c o lle c to r-e m itte r sa tu ra tio n v o lta g e VcEisatj • G ood lin earity o f DC cu rre n t gain (Iife )	OCR Scan	PU4312 DQ17G4b P114312	PDF
2N5583 Abstract: MRF558 Contextual Info: I MOT OROL A SC XSTRS/R F 4bE D b3b?254 OO^ MOf l e T •MOTb MOTOROLA SEM ICONDUCTOR TECHNICAL DATA The RF Line Ip = -5 0 0 m A HIGH FREQUENCY TRANSISTOR PNP SILICON HIGH FREQUENCY TRANSISTOR PNP SILICON . . . designed for applications in high frequency amplifiers and	OCR Scan	MIL-S-19500 MRFS583HX, MRF5583HXV 2N5583 b3b72S4 MRF558	PDF
transistor Abstract: MJE15031 CHIP TRANSISTOR CP645 ny transistor transistor cr Contextual Info: PROCESS CP645 Central Power Transistor TM Semiconductor Corp. PNP, 8.0A Power Transistor Chip PROCESS DETAILS Process MULTIEPITAXIAL MESA Die Size 120 x 145 MILS Die Thickness 13 MILS Base Bonding Pad Area 20 x 45 MILS Emitter Bonding Pad Area 14 x 70 MILS	Original	CP645 MJE15031 transistor MJE15031 CHIP TRANSISTOR CP645 ny transistor transistor cr	PDF
transistor CR pnp Abstract: CJD42C Transistor switch CP611 TIP42C chip die transistor Contextual Info: PROCESS CP611 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL BASE Die Size 80 X 99 MILS Die Thickness 12.5 ± 1 MILS Base Bonding Pad Area 12 X 32 MILS Emitter Bonding Pad Area 13 X 46 MILS Top Side Metalization Al - 50,000Å	Original	CP611 CJD42C TIP42C 21-August transistor CR pnp CJD42C Transistor switch CP611 TIP42C chip die transistor	PDF

TIP32C Abstract: CP608 transistor cr CJD32C Contextual Info: PROCESS CP608 Power Transistor PNP - Amp/Switch Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 66 x 66 MILS Die Thickness 12.5 ± 1.0 MILS Base Bonding Pad Area 12 x 24 MILS Emitter Bonding Pad Area 11 x 14 MILS Top Side Metalization Al - 50,000Å	Original	CP608 CJD32C TIP32C 22-March TIP32C CP608 transistor cr CJD32C	PDF
transistor marking CR Abstract: 13001 TRANSISTOR transistor cr marking SRA2219U KSR-3035-000 Contextual Info: SRA2219U Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2219U OT-323 KSR-3035-000 -10mA -10mA, -20mA transistor marking CR 13001 TRANSISTOR transistor cr marking SRA2219U KSR-3035-000	PDF
IC 4016 Abstract: data sheet for IC 4016 4016 ic data sheet of ic 4016 SRA2219EF Contextual Info: SRA2219EF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2219EF OT-523F KSR-4016-000 -10mA -10mA, -20mA IC 4016 data sheet for IC 4016 4016 ic data sheet of ic 4016 SRA2219EF	PDF
transistor cr marking code Abstract: transistor marking CR SRA2219E Contextual Info: SRA2219E Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process	Original	SRA2219E OT-523 KSR-4032-000 -10mA -10mA, -20mA transistor cr marking code transistor marking CR SRA2219E	PDF
transistor c 2053 Abstract: 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ 2PD602 2PD602A Contextual Info: Phi IIpa Se mieond ucto rs ^ 711D flB b G Q VOD lfl 3S7 • P H IN PNP general purpose transistor Oblectlve specification 2PB710; 2PB710A PIN CONFIGURATION FEATURES • Large collector current • Low collector-emrtter saturation voltage. _ DESCRIPTION _ 2	OCR Scan	711Qflgb 2PB710; 2PB710A 2PD602 2PD602A -SC59 2PB710Q: 2PB710R: 2PB710S: 2PB710AQ: transistor c 2053 2PB710AR 2PB710Q 2PB710R 2PB710S 2PB710 2PB710A 2PB710AQ	PDF
supersot 6 TE Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige	OCR Scan	FMBA0656 300mA. supersot 6 TE	PDF
D marking PNP Abstract: MARKING IC RP 6 PR63 Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge	OCR Scan	FMB2227A 300mA. 150mA 150mA, 300mA, 100kHz 100MHz D marking PNP MARKING IC RP 6 PR63	PDF
2SA amplifier Abstract: H1000I 2SA1514K 2SA1579 2SC3906K 2SC4102 transistor 2SA transistor PNP Contextual Info: 2SA1514K 2SA1579 Transistor, PNP Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) and UMT3 (UMT, SC-70) packages • package marking: 2SA1514K and 2SA1579; R-*, where ★ is hFE code • • high breakdown voltage: V qeo = -120 V complementary pair with 2SC3906K	OCR Scan	2SA1514K 2SA1579 SC-59) SC-70) 2SA1579; -120V 2SC3906K 2SC4102 2SA1514K 2SA amplifier H1000I 2SA1579 2SC4102 transistor 2SA transistor PNP	PDF
Contextual Info: TOSHIBA RN2110F#R N 2111F TO SHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2110F, RN2111F Unit in mm SW ITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT A N D DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors Simplify Circuit Design	OCR Scan	RN2110F 2111F RN2110F, RN2111F RN1110F, RN1111F 150umed RN2110F	PDF
Contextual Info: TOSHIBA RN2310,RN2311 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS RN2310, RN2311 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS • • • • With Built-in Bias Resistors Simplify Circuit Design Reduce a Quantity of Parts and Manufacturing Process	OCR Scan	RN2310 RN2311 RN2310, RN1310, RN1311 RN2310	PDF

TRANSISTOR CR PNP Search Results

TRANSISTOR CR PNP Result Highlights (5)

TRANSISTOR CR PNP Datasheets Context Search

supersot 6 TE

supersot 6 TE

MPS2907 toshiba

2SA1042

BT8032

BT8040N

transistor tt 2206

transistor E 13009

2N5583

transistor

transistor CR pnp

TIP32C

transistor marking CR

IC 4016

transistor cr marking code

transistor c 2053

supersot 6 TE

D marking PNP

2SA amplifier